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Transparent and Flexible Thin-Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition
摘要： High-performance, transparent, and flexible thin-film transistors (TFTs) with polycrystalline channels in a bottom-gate structure are successfully fabricated at extremely low temperatures of 80, 90, and 100 °C by atomic layer deposition (ALD) in which ZnO and Al2O3 are used as channels and dielectric layers, respectively. The transistors are superior to silicon-based TFTs in which high temperatures are necessarily involved in both preparation and postgrowth annealing. Among all devices, TFTs grown at 100 °C exhibit the best performance which can be attributed to the lowest grain boundary trap density. Additionally, the TFTs are successfully transferred to plastic substrates without any performance degradation, which shows a high mobility of 37.1 cm2 V?1 s?1, a high on/off-state current ratio of 107 at VDS = 0.1 V, a small subthreshold swing of 0.38 V dec?1, and a proper threshold voltage of 1.34 V as well as an excellent bias stability.
关键词： bottom gate/top contacts,thin-film transistors,oxide,atomic layer deposition,zinc oxide,aluminum
更新于2025-09-10 09:29:36
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P-1.9: Characterization of Self-Aligned Top-Gate Microcrystalline Silicon Thin Film Transistors
摘要： Self-aligned top-gate microcrystalline silicon (μc-Si) thin film transistors (TFTs) are fabricated and characterized. By replacing high-temperature SiO2 with low-temperature SiO2, the performance of self-aligned top-gate μc-Si TFTs can be greatly improved due to the prevention of hydrogen diffusion into the air. The bridged grain (BG) structure is successfully applied to self-aligned top-gate μc-Si TFTs for the first time. By employing the BG doping inside the channel, all device characteristics are improved in self-aligned top-gate μc-Si TFTs.
关键词： Microcrystalline silicon,bridged grain,thin film transistors,self-aligned
更新于2025-09-10 09:29:36
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P-6.1: Asymmetric Effects of Gate-Bias Stress Voltage on the Stability under Positive and Negative Gate-Bias Stress of a-IGZO TFTs
摘要： The asymmetric effects of gate-bias stress voltage on the stability under positive gate-bias stress (PBS) and negative gate-bias stress (NBS) of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) are investigated. It is observed that under PBS, the threshold voltage shift (?Vth) increases with the increased value of the gate-bias stress voltage (VStress), which is due to the enhanced electron trapping at/near the interface of the channel and the gate insulator. However, under NBS, the ?Vth is nearly unaffected by the Vstress. As the NBS-induced negative ?Vth is resulted from electron-detrapping from the donor-like states related to oxygen vacancies, it is supposed that the rate of electron-detrapping is not sensitive to the negative gate-bias voltage. The influence of N2O plasma back-channel treatment is also studied. The stability under NBS is effectively improved after the N2O plasma treatment, which originates from the decreased density of oxygen-vacancy related donor-like states within the a-IGZO channel layer.
关键词： thin-film transistors,N2O plasma treatment.,amorphous InGaZnO,gate-bias stress,stability
更新于2025-09-10 09:29:36
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A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated with Metal Oxide TFTs
摘要： This paper presents an integrated operational amplifier (OPAMP) consisting of only n-type metal oxide thin-film transistors (TFTs). In addition to using positive feedback in the input differential pair, a transconductance-enhancement topology is applied to improve the gain of the OPAMP. The OPAMP has a voltage gain (Av) of 29.54 dB over a 3 dB bandwidth (BW) of 9.33 kHz at a supply voltage of 15 V. The unity-gain frequency, phase margin and DC power consumption (PDC) are 180.2 kHz, 21.5°PM and 5.07 mW, respectively.
关键词： transconductance-enhancement topology,Operational amplifier,positive feedback,metal oxide thin-film transistors (TFTs)
更新于2025-09-09 09:28:46
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Double active layer InZnO:N/InZnSnO thin film transistors with high mobility at low annealing temperature
摘要： In this paper, bottom-gate top-contact thin film transistors (TFTs) with a double active layer of InZnO:N/InZnSnO (IZO:N/IZTO) were successfully prepared. The IZO:N/IZTO thin films were deposited on SiO2/p-Si substrates by radio frequency (RF) magnetron sputtering at room temperature. The transmittance of both the IZO:N thin film and the IZTO thin film were more than 80% in the range of visible light. The IZO:N thin film and the IZTO thin film were found to be amorphous at the annealing temperature of 325?°C by means of X-ray diffraction (XRD). The double active layer IZO:N/IZTO TFT exhibited good electrical performance with a saturation mobility of 41.5?cm2?V?1?s?1, an on/off current ratio of 2.88 × 105, and a threshold voltage of 1.0?V, which achieved high mobility at the low annealing temperature of 325?°C.
关键词： low annealing temperature,RF magnetron sputtering,high mobility,InZnO:N/InZnSnO,thin film transistors
更新于2025-09-09 09:28:46
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Back-Channel-Etched Thin-Film Transistors With Tunable Acid-Resistant Zr-Doped Indium Oxide Active Layer
摘要： In this paper, a tunable acid-resistant Zr-doped indium oxide (ZrInO) semiconductor material was developed. Detailed studies showed that the acid resistance of ZrInO thin films is tunable and increases with the increase in annealing temperature. Taking advantage of this special property, we successfully fabricated back-channel-etched (BCE) thin-film transistors (TFTs) based on the tunable acid-resistant ZrInO thin film. ZrInO-TFTs with BCE structure exhibited excellent electrical performance with a saturation mobility of 21.4 cm2V?1s?1, a subthreshold swing of 0.28 V/decade, and an on/off current ratio of 1.0 × 107. These results envision that the developed ZrInO semiconductor with tunable acid resistance has a good prospect for the channel layer of BCE-TFTs.
关键词： oxide semiconductor,Anodic Al2O3,tunable acid-resistant Zr-doped indium oxide (ZrInO),back-channel etch (BCE),thin-film transistors (TFTs)
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness
摘要： We investigated the effect of active layer thickness on dynamic threshold voltage (VTH) operation for double-gate (DG) (a-IGZO) thin-film transistors (TFTs). It is found that with 80 nm a-IGZO layer, by adjusting top gate (TG) biases from negative to positive, the bottom gate (BG)-sweep TFTs show a VTH dependence on TG bias with two linear relationships, and subthreshold swing (SS) varies with different TG biases. In contrast, with thinner (20 nm) a-IGZO layer, VTH of the BG-sweep TFTs is linearly modulated with a single slope, and no obvious SS change is observed.
关键词： Thin-film transistors (TFTs),amorphous indium-gallium-zinc-oxide (a-IGZO),double-gate
更新于2025-09-09 09:28:46
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Effects of post-deposition plasma treatments on stability of amorphous InGaZnO <i> <sub/>x</sub></i> thin-film transistors prepared with plasma-assisted reactive magnetron sputtering
摘要： Effects of post-deposition plasma treatments on the stability of amorphous InGaZnOx thin-film transistors (TFTs) prepared with plasma-assisted reactive magnetron sputtering were investigated. The temporal evolution in the electrical characteristics of as-deposited IGZO TFT and post plasma treated IGZO TFT that passed over 400 d after fabrication and were kept under 40% humidity at room temperature were measured, resulting in which no change in the electrical characteristics of post plasma treated IGZO TFT with mobility of 40 cm2 V?1 s?1 were observed. Positive-current-bias instability in post plasma treated IGZO TFTs was examined together with as-deposited IGZO TFTs. The results indicated that the stabilities of electrical characteristics caused by the positive bias stress is primarily attributed to defects in the bulk a-IGZO region for as-deposited IGZO TFTs. The stabilities of electrical characteristics in post plasma treated IGZO TFTs were considerably improved compared to that of as-deposited IGZO TFTs. From these results, it was shown that the post plasma treatment is considered to be effective for improving the stability of IGZO TFTs as well as conventional thermal annealing.
关键词： post-deposition plasma treatments,stability,plasma-assisted reactive magnetron sputtering,amorphous InGaZnOx,thin-film transistors
更新于2025-09-09 09:28:46
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Boosting Direct X-Ray Detection in Organic Thin Films by Small Molecules Tailoring
摘要： The attention focused on the application of organic electronics for the detection of ionizing radiation is rapidly growing among the international scientific community, due to the great potential of organic technology to enable large-area conformable sensor panels. However, high-energy photon absorption is challenging as organic materials are constituted of atoms with low atomic numbers. Here it is reported how, by synthesizing new solution-processable organic molecules derived from 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene, with Ge-substitution in place of the Si atoms to increase the material atomic number, it is possible to boost the X-ray detection performance of organic thin films on flexible plastic substrates. Bis(triisopropylgermylethynyl)-pentacene based flexible organic thin film transistors show high electrical performance with higher mobility (0.4 cm2 V?1 s?1) and enhanced X-ray sensitivity, up to 9.0 × 105 μC Gy?1 cm?3, with respect to TIPS-pentacene-based detectors. Moreover, similar results are obtained for 5,11-bis(triethylgermylethynyl)anthradithiophene devices, confirming that the proposed strategy, that is, increasing the atomic number of organic molecules by chemical tailoring to improve X-ray sensitivity, can be generalized to organic thin film detectors, combining high X-ray absorption, mechanical flexibility, and large-area processing.
关键词： organic X-ray detectors,thin film transistors,TIPS-pentacene,TIPGe-pentacene
更新于2025-09-09 09:28:46
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Extraction of Contact Resistance and DC Modelling in Metal Oxide TFTs
摘要： Based on the device physics, a simple and fast method of extracting contact resistance in metal oxide thin-film transistors (MOTFTs) is proposed through the I-V characteristics. This method divides the channel into two parts: the contact channel and the intrinsic channel, and assumes the electrons injected into the active layer at the source side are completed in the line injection. Using the I-V characteristics, the contact voltage can be obtained, and then the contact resistance can be extracted. The results indicate that contact resistance in MOTFTs depends on Vg, Vd, and L. Applying the extraction results, a DC drain current model considering contact resistance is proposed. Using this model, we can accurately describe the measurements of MOTFTs with channel lengths scaling from 50 μm to 10 μm. Through the extensive comparisons between the model results and the measurements, the validity of the method is strongly supported. This extraction method uses non-numerical iteration, which is simple, fast and accurate.
关键词： contact voltage,Metal oxide thin-film transistors,contact resistance,I-V characteristics.,DC model
更新于2025-09-09 09:28:46