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Improved Negative Bias Stress Stability of Sol-Gel-Processed Mg-Doped In <sub/>2</sub> O <sub/>3</sub> Thin Film Transistors
摘要： We demonstrate sol–gel-processed Mg-doped In2O3 thin film transistors (TFTs) with high performance and improved stability. To improve the performance of indium oxide, which is unstable at a high negative threshold voltage, magnesium is used to suppress oxygen vacancy formation. As the Mg doping concentration increases, the oxygen deficiencies and OH impurities decrease, resulting in a positive shift in the threshold voltage and improved stability in negative bias stress environments. In this experiment, Mg-doped (0 to 2 wt%) indium oxide TFTs are fabricated. Indium oxide prepared from a synthesized solution of an indium nitrate hydrate precursor and 2-methoxyethanol has a mobility of 17.2 cm2/V s. In2O3 TFTs doped with 1 wt% Mg also show a high mobility of 11.02 cm2/V s and a noticeable ?1.5 V threshold voltage shift under negative bias stress. Our results suggest that the sol–gel-processed Mg-doped In2O3 TFTs are a promising candidate for use in high-stability and high-performance applications in transparent devices.
关键词： thin film transistors,negative bias stress,Mg doping,Sol-gel,In2O3
更新于2025-09-09 09:28:46
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Investigating Zinc Ketoiminates as a New Class of Precursors for Solution Deposition of ZnO Thin Films
摘要： Zinc oxide (ZnO) has been recognized as one of the most promising metal oxide semiconductor material for processing low-cost thin film transistors (TFTs). Within the scope of this work, we demonstrate a simple, stabilizer free and very efficient chemical solution deposition (CSD) route to grow high quality ZnO layers. The identification of a highly soluble zinc ketoiminate precursor that undergoes hydrolysis under ambient conditions with the facile cleavage of the ligands was the key to develop a simple and straightforward process for ZnO thin films under mild process conditions. Upon heat treatment at moderate temperatures, the precursor decomposes cleanly yielding polycrystalline ZnO thin films, which was confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composition was investigated employing complementary techniques such as X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS) which revealed high purity ZnO layers. The functional properties in terms of transparency and optical band gap were determined by ultraviolet-visible (UV-Vis) spectroscopy. The transparent ZnO semiconductor thin films serve as active channel layer of thin film transistors (TFT) which was demonstrated by spin coating of the precursor. Subsequent curing in ambient air, yields a 10 nm film that is sufficient to fabricate working TFTs test structures.
关键词： Oxide Semiconductors,Additive-Free Solution Processing,Composition,Thin Film Transistors
更新于2025-09-04 15:30:14
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P-1.11: A Compact Model of Current and Capacitance for Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
摘要： In recent years, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have shown outstanding performance in flexible circuit applications, active matrix display and so on. Therefore, they will play an increasingly important role in the future of electronic applications. At the same time, an analytical model that predicts the electrical characteristics of IGZO TFTs is also critical. In this paper, we present a current and capacitance compact model of a-IGZO TFTs. The compact model can be applied to different channel lengths for a-IGZO TFTs. Besides, it is capable of capturing device characteristics and of maintaining high computational efficiency. Its accuracy is validated through the extensive comparisons between model results and experimental data.
关键词： degenerate mechanism,AC model,Amorphous IGZO thin-film transistors,DC model
更新于2025-09-04 15:30:14
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Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors
摘要： Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.
关键词： thin-film transistors,oxygen annealing,HfIZO,photo-induced stability,device performance
更新于2025-09-04 15:30:14
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P-1.13: Influence of the Source/Drain Material on Oxide Semiconductor Thin Film Transistors
摘要： With the progress of technology, to reduce the load of display panels, some researchers have been carried out to investigate the effects of source/drain electrodes on the performance of a-IGZO based TFTs. In this paper, indium gallium zinc oxide (IGZO) is chosen as the active layer material, and we use four different types of source/drain materials including indium-tin-oxide (ITO), Al, Al-doped zinc oxide (AZO) and Ga-doped zinc oxide (GZO) to explore the influence of different source/drain materials on the characteristics of oxide semiconductor thin film transistors (TFT). The results show that TFTs with AZO as source/drain electrodes exhibit good characteristics. After 200℃ annealing, the output characteristic of TFT with AZO as source/drain electrodes becomes better and its source/drain series resistance is low. From this study, AZO can be considered as a hopeful source/drain material which would be utilized in the future displays technology.
关键词： AZO,thin film transistors,IGZO,oxide semiconductor,source/drain material
更新于2025-09-04 15:30:14
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Stretchable active matrix of oxide thin-film transistors with monolithic liquid metal interconnects
摘要： We demonstrate a new process scheme for fabricating stretchable active matrices of oxide thin-film transistors (TFTs), where TFTs and cross points of two metal layers on stiff islands are monolithically integrated with gallium-based liquid metal interconnects within an elastomeric matrix. As the liquid metal interconnects are formed by a photolithography-based technique compatible with conventional flexible circuit technology, this approach can provide high integration density and mechanical durability as required in stretchable displays or electronic skins. We have fabricated a 4 × 4 active matrix of oxide TFTs within a 20 × 20 mm2 area, which provides stable operation up to 40% of stretching.
关键词： liquid metal interconnects,oxide thin-film transistors,active matrix,photolithography,stretchable electronics
更新于2025-09-04 15:30:14
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Imide‐Functionalized Polymer Semiconductors
摘要： Imide-functionalized p-conjugated polymer semiconductors have received a great deal of interest owing to their unique physicochemical properties and optoelectronic characteristics, including excellent solubility, highly planar backbones, widely tunable band gaps and energy levels of frontier molecular orbitals, and good film morphology. The organic electronics community has witnessed rapid expansion of the materials library and remarkable improvement in device performance recently. This review summarizes the development of imide-functionalized polymer semiconductors as well as their device performance in organic thin-film transistors and polymer solar cells, mainly achieved in the past three years. The materials mainly cover naphthalene diimide, perylene diimide, and bithiophene imide, and other imide-based polymer semiconductors are also discussed. The perspective offers our insights for developing new imide-functionalized building blocks and polymer semiconductors with optimized optoelectronic properties. We hope that this review will generate more research interest in the community to realize further improved device performance by developing new imide-functionalized polymer semiconductors.
关键词： organic thin-film transistors,imide-functionalized polymers,organic semiconductors,solar cells
更新于2025-09-04 15:30:14
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Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors
摘要： While it is known that the charge-carrier mobility in amorphous metal oxide semiconductor thin ?lm transistors (TFT) deviates from Arrhenius temperature dependence, we found that the Hall mobility measured in amorphous In-Ga-Zn-O (a-IGZO) follows an Arrhenius relation surprisingly well. We explain these observations by the effect of strong vertical electric ?eld created by the gate voltage, which facilitates direct tunneling of trapped carriers into the conductive band and leads to virtually temperature independent mobility. We present a generalized Arrhenius model based on the effective temperature concept. We show that our model allows quantitative description of the temperature dependence of the mobility in a-IGZO TFTs over a broad temperature range.
关键词： charge transport,thin film transistors,Arrhenius relation,amorphous oxide semiconductor,electric field
更新于2025-09-04 15:30:14