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Rational Control of WSe<sub>2</sub> Layer Number via Hydrogen-Controlled Chemical Vapor Deposition
摘要： Transition metal dichalcogenides are a promising family of materials for electronics and optoelectronics, in part due to their range of bandgaps that can be modulated by layer number. Here, we show that WSe2 can be selectively grown with one, two, or three layers, as regulated by a one-step hydrogen-controlled chemical vapor deposition (H-CVD) process involving cyclical pulses of H2 flow. The physical and vibrational properties of the resulting mono-, bi-, and tri-layer WSe2 films are characterized by atomic force microscopy and Raman spectroscopy. Modifying the H-CVD process to include more than three H2 pulses results in thicker WSe2 films, however the thickness of these films is not well controlled and feature small, bulk-like pyramidal islands. Transmission electron microscopy analysis reveals that most of these islands exhibit a spiral structure and appear to be grown via screw-dislocation-driven growth, similar to other works. Therefore, the H-CVD process is demonstrated to be a powerful tool for controlling the layer thickness of WSe2, but its practicality is limited to the few-layer regime.
关键词： Chemical vapor deposition,Transition metal dichalcogenides,Screw-dislocation-driven growth
更新于2025-09-23 15:19:57
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Boosted Reactivity of Low-Cost Solar Cells over a CuO/Co <sub/>3</sub> O <sub/>4</sub> Interfacial Structure Integrated with Graphene Oxide
摘要： Developing cost-effective and environment-friendly counter electrodes (CEs) with high performance is central for the commercial application of dye-sensitized solar cells (DSSCs). In this work, the porous interfacial CuO/Co3O4@GO (CCO@GO) hybrid was fabricated by encapsulating the self-assembled CuO/Co3O4 nanosphere in graphene oxide (GO) and acted as a CE for the first time. Further measurements verified that the optimized CCO@GO hybrid not only provided a higher specific surface area (86.7 m2?g?1) with more exposed catalytic sites, but also significantly enhanced the power conversion efficiency (PCE = 8.34%) of DSSC, which was higher than that of the Co3O4-based CE (2.66%) and commercial Pt CE (7.85%). The results indicate that the interfacial CuO/Co3O4@GO hybrid synergistically accelerates the diffusion of I3?/I? redox couple and transmission of electrons, thus promoting the reaction kinetics. This work provides a remarkable way for exploring economical high-performance Pt-free CEs for DSSCs, as well as contributes to the further development for other energy-related fields.
关键词： DSSCs,interfacial structure,transition metal oxides,CuO/Co3O4@GO,counter electrode
更新于2025-09-23 15:19:57
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Digital holography for non-invasive quantitative imaging of two-dimensional materials
摘要： Digital holography has found applications in many walks of life, from medicine to metrology, due to its ability to measure complex fields. Here, we use the power of digital holography to quantitatively image two-dimensional Transition Metal Dichalcogenides (TMDs) such as MoS2 and WS2 placed on a SiO2/Si substrate and determine their complex refractive indices or layer thicknesses. By considering the different refractive indices of the TMDs as they are thinned down from bulk to monolayers and by holographically capturing both the amplitude and the phase of reflected light, single atomic layers of TMDs, about 0.7 nm thick, can be resolved. Using holography, we also predict the number of layers contained within a thick TMD flake, which shows agreement with results obtained using Atomic Force Microscopy (AFM). A Bland–Altman analysis was performed to compare our experimental results with the standard AFM measurements, yielding a limit of agreement <5 nm for samples with thicknesses ranging from 15 to 60 nm. Our technique is non-contact, non-invasive, does not require scanning, and produces a field of view of a few hundred micrometers by a few hundred micrometers in a single capture. To further our study, we also perform simulations to demonstrate how the thickness of the SiO2 layer and the laser wavelength are critical in optimizing the amplitude and phase response of a two-dimensional material. These simulations can be used as a roadmap to determine the ideal wavelength and SiO2 layer thickness that should be used to accurately determine the refractive index or thickness of any given sample.
关键词： digital holography,Atomic Force Microscopy,layer thicknesses,Bland–Altman analysis,Transition Metal Dichalcogenides,two-dimensional materials,complex refractive indices
更新于2025-09-23 15:19:57
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Half-metallic properties of transition metals adsorbed on WS2 monolayer: a first-principles study
摘要： Given the various applications of half-metals in the spintronics devises, we studied the structural, electronic and magnetic properties of transition-metal (TM) (Cr, Mn, Fe, Co, Ni, and Cu) adatoms on WS2 monolayer by performing first-principles calculations. Based on the adsorption energy, TM atoms prefer to occupy the TW site, above the W atoms, for all the cases. The results indicate that systems of Cr, Mn, Fe, and Co adsorbed on WS2 monolayer are magnetic, while in Ni and Cu atoms adsorbed don’t have any magnetic properties. The TM atoms are adsorbed chemically to the WS2 layer. The obtained values of the total magnetic moment vary from 4 μB to 1 μB in case of Cr to Co adsorption, respectively, which agree with the Slater–Pauling rule. Based on the magnetic moment of 0.00 μB, non-magnetic states are realized for Ni and Cu adsorption. More importantly, the high spin polarization of 100% at the Fermi level is achieved in the Cr, Mn, Fe and Co adsorption, which implies the potential for application in spintronic devices.
关键词： WS2,DFT,Spintronic,Half-metal,transition metal
更新于2025-09-19 17:15:36
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Strained bubbles in van der Waals heterostructures as local emitters of photoluminescence with adjustable wavelength
摘要： The possibility to tailor photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDCs) using external factors such as strain, doping and external environment is of significant interest for optoelectronic applications. Strain in particular can be exploited as a means to continuously vary the bandgap. Micrometer-scale strain gradients were proposed for creating ‘artificial atoms’ that can utilize the so-called exciton funneling effect and work, for example, as exciton condensers. Here we describe room-temperature PL emitters that naturally occur whenever monolayer TMDC is deposited on an atomically flat substrate. These are hydrocarbon-filled bubbles which provide predictable, localized PL from well-separated submicron areas. Their emission energy is determined by the built-in strain controlled only by the substrate material, such that both the maximum strain and the strain profile are universal for all bubbles on a given substrate, i.e., independent of the bubble size. We show that for bubbles formed by monolayer MoS2, PL can be tuned between 1.72 to 1.81 eV by choosing bulk PtSe2, WS2, MoS2 or graphite as a substrate and its intensity is strongly enhanced by the funneling effect. Strong substrate-dependent quenching of the PL in areas of good contact between MoS2 and the substrate ensures localization of the luminescence to bubbles only; by employing optical reflectivity measurements we identify the mechanisms responsible for the quenching. Given the variety of available monolayer TMDCs and atomically flat substrates and the ease of creating such bubbles, our findings open a venue for making and studying the discussed light-emitting ‘artificial atoms’ that could be used in applications.
关键词： photoluminescence,exciton funneling,monolayer transition metal chalcogenides,excitons,strain engineering
更新于2025-09-19 17:15:36
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van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling-Bond-Free WSe <sub/>2</sub> and WS <sub/>2</sub>
摘要： 2D metals have attracted considerable recent attention for their special physical properties, such as charge density waves, magnetism, and superconductivity. However, despite some recent efforts, the synthesis of ultrathin 2D metals nanosheets down to monolayer thickness remains a significant challenge. Herein, by using atomically flat 2D WSe2 or WS2 as the growth substrate, the synthesis of atomically thin 2D metallic MTe2 (M = V, Nb, Ta) single crystals with the thickness down to the monolayer regime and the creation of atomically thin MTe2/WSe2 (WS2) vertical heterojunctions is reported. Comparison with the growth on the SiO2/Si substrate under the same conditions reveals that the utilization of the dangling-bond-free WSe2 or WS2 as the van der Waals epitaxy substrates is crucial for the successful realization of atomically thin MTe2 (M = V, Nb, Ta) nanosheets. It is further shown that the epitaxial grown 2D metals can function as van der Waals contacts for 2D semiconductors with little interface damage and improved electronic performance. This study defines a robust van der Waals epitaxy pathway to ultrathin 2D metals, which is essential for fundamental studies and potential technological applications of this new class of materials at the 2D limit.
关键词： van der Waals epitaxy,field-effect transistors,2D materials,chemical vapor deposition,transition metal dichalcogenides
更新于2025-09-19 17:15:36
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[IEEE 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - Portland, OR, USA (2018.10.14-2018.10.17)] 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - Magnetic Characterization of Cobalt Selenide and Nickel Selenide Thin Films
摘要： Transition metal dichalcogenides (TMDCs) are a family of materials whose crystalline structure consists of a layer of transition metal atoms sandwiched between 2 layers of chalcogenide atoms. Some of these materials can be grown in 2D hexagonal phase and show tunability of their electrical and magnetic properties based on layer thickness. One aspect of these materials that has received little attention is their magnetic properties. Hence, we have investigated magnetic properties of CoSe and NiSe their heterostructure. The reason for choosing these intrinsically ferromagnetic transition metal atoms based TMCs was to examine how reduction from the bulk to 2D films would influence the magnetic activity of these samples. In order to produce large area films, we have employed atomic layer deposition (ALD) for growth of uniform, few layer-thick films. First the composition and crystal structure of these films are characterized, and then their magnetic properties analyzed. We have found that thin films of both these materials show mostly paramagnetic behavior.
关键词： cobalt selenide,magnetic properties,Transition metal chalcogenides,thin film,nickel selenide
更新于2025-09-19 17:15:36
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[IEEE 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - Portland, OR, USA (2018.10.14-2018.10.17)] 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing
摘要： Resistive random-access memory (RRAM) has shown great potential for neuromorphic engineering, due to its ability of emulating neural network and simple structure. To mimic the brain-learning behavior, two types of neural actions, short-term plasticity (STP) and long-term potentiation (LTP), should be imitated perfectly. In this work, we propose a unique RRAM cell with a double switching layer, in which a 2D material is embedded as a separation layer. Within a proper voltage range of stress, the mobile oxygen ions are blocked by the single atomic layer, and hence the subsequent relaxation of oxygen ions leads to a volatile switching characteristic. Owing to this volatile characteristic, the proposed device can mimic neural actions, STP and LTP, by a simple pulse train with different repetitions and frequencies without the complicated pulse settings of spike-timing-dependent plasticity (STDP). For various future brain-inspired applications, different switching materials with different bind energies and relaxation times of oxygen ions can be utilized.
关键词： LTP,2D materials,neuromorphic engineering,RRAM,STP,transition-metal-oxide,volatile
更新于2025-09-19 17:15:36
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Engineering Point Defect States in Monolayer WSe <sub/>2</sub>
摘要： Defect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe2 by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave-function such that previously hidden mid-gap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on-off switching by the odd-even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggest a possibility of gate-programmable magnetic moments at the defects.
关键词： mid-gap defect states,spin splitting,defect engineering,local magnetic moment,transition metal dichalcogenides
更新于2025-09-19 17:15:36
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Two-dimensional (PEA) <sub/>2</sub> PbBr <sub/>4</sub> perovskite single crystals for a high performance UV-detector
摘要： Two-dimensional (2D) metallic transition metal dichalcogenides (MTMDCs), the complement of 2D semiconducting TMDCs, have attracted extensive attentions in recent years because of their versatile properties such as superconductivity, charge density wave, and magnetism. To promote the investigations of their fantastic properties and broad applications, the preparation of large-area, high-quality, and thickness-tunable 2D MTMDCs has become a very urgent topic and great efforts have been made. This topical review therefore focuses on the introduction of the recent achievements for the controllable syntheses of 2D MTMDCs (VS2, VSe2, TaS2, TaSe2, NbS2, NbSe2, etc.). To begin with, some earlier developed routes such as chemical vapor transport, mechanical/chemical exfoliation, as well as molecular beam epitaxy methods are briefly introduced. Secondly, the scalable chemical vapor deposition methods involved with two sorts of metal-based feedstocks, including transition metal chlorides and transition metal oxidations mixed with alkali halides, are discussed separately. Finally, challenges for the syntheses of high-quality 2D MTMDCs are discussed and the future research directions in the related fields are proposed.
关键词： metallic transition metal dichalcogenides,synthesis,chemical vapor deposition,two dimensional
更新于2025-09-19 17:15:36