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Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells
摘要： Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the e?ciency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best e?ciency of the devices utilizing the low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion e?ciency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiOx ?lm, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the bene?cial e?ects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a signi?cant improvement in the performance of NiOx-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two di?erent points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance.
关键词： hole transport material,inverted planar perovskite solar cell,perovskite morphology,Co-doped NiOx,electrical conductivity
更新于2025-09-23 15:21:01
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Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells
摘要： Metal halide perovskite solar cells (PSCs) have rapidly evolved over the past decade to become a photovoltaic technology on the cusp of commercialization. In the process, numerous fabrication strategies have been explored with the goal of simultaneously optimizing for device efficiency, stability, and scalability. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) have proven to be effective tools for the fabrication of various components of PSCs. This review article examines the application of CVD and ALD for the deposition and modification of charge transport layers, passivation layers, absorber materials, encapsulants, and electrodes. It outlines the use of these vapor deposition techniques in state-of-the-art, multi-junction solar cell devices, and also contains a discussion of the stability of metal halide perovskite materials under CVD and ALD conditions based on in-situ characterization reported in literature. This article concludes with insights into future CVD and ALD research directions that could be undertaken to further aid the deployment of PSCs in emerging solar photovoltaic markets.
关键词： absorber materials,passivation layers,encapsulants,atomic layer deposition,charge transport layers,chemical vapor deposition,perovskite solar cells,electrodes
更新于2025-09-23 15:21:01
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[IEEE 2019 14th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS) - Nis, Serbia (2019.10.23-2019.10.25)] 2019 14th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS) - Electron Transport Through 2D Waveguide Using QTBM
摘要： Simulation of Electron Transport through two dimensional(2D) waveguide using Quantum Transport Boundary Method (QTBM) is done. Specifically, as an example the results of modeling L-shaped contact for a rectangular waveguide are presented. 2D-QTBM approach can be used in any scenario where the vertical axis of the device structure is significantlylarge and therefore the 2D approximation would be considered valid. This method elegantly generalizes to arbitrary shaped waveguides.
关键词： MOSFET,QTBM,2D Electron Transport
更新于2025-09-23 15:21:01
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Single-photon limit of dispersive readout of a qubit with a photodetector
摘要： We study the dispersive readout of a qubit in the ultimate limit of a single-photon probe. The use of a single-photon probe avoids the errors due to nonorthogonality of coherent states. A photodetector is used in the scheme we consider. The dynamics of the system is studied using the Heisenberg-Langevin equations. We treat the counter-rotating terms in the Hamiltonian perturbatively, which leads to the Bloch-Siegert shift in the resonator frequency. It is shown how the shift can improve the readout. The theory of photon transport through the qubit and the resonator it couples to is provided while taking the effect of the counter-rotating terms into account. To calculate the readout contrast, we use two approaches. The first one neglects the qubit relaxation and allows us to derive a compact expression for the contrast. Also, we obtain simple estimates for the system parameters to maximize the contrast. The second approach accounts for the qubit relaxation, which allows us to further improve the contrast. We demonstrate that for a readout time of 1 μs, a contrast of more than 75% can be achieved for an ideal detector and single-photon source.
关键词： Heisenberg-Langevin equations,qubit,dispersive readout,photon transport,Bloch-Siegert shift,readout contrast,photodetector,single-photon probe
更新于2025-09-23 15:21:01
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Desynchronization of Pulsed Driving in the Formation of Soliton Kerr Frequency Combs
摘要： MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRèME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. Extensive discussion and references are provided that illustrate the validation of models used to implement specific simulations of relevant physical processes. Several applications of MRED are summarized that demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices. These include effects from single particle radiation (including both direct ionization and indirect ionization effects), dose enhancement effects, and displacement damage effects. MRED simulations have also helped to identify new single event upset mechanisms not previously observed by experiment, but since confirmed, including upsets due to muons and energetic electrons.
关键词： single event upset,single event effects,total ionizing dose,radiation effects,Displacement damage,Monte Carlo,radiation transport,MRED
更新于2025-09-23 15:21:01
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A generalised approach to calculate various transport observables for a linear array of series and parallel quantum dots
摘要： A systematic generalised approach to ?nd transport observables for a linear array of different quantum dot (QD) systems has been discussed, using non-equilibrium Green function (NEGF) formalism, in the presence of on-dot Coulomb interaction and inter-dot tunnelling. The equation of motion (EOM) method has been used to derive expressions for Green functions (GFs) within the simplest mean-?eld approximation to tackle the Coulomb correlation term. Starting from the mathematical structures of GFs for single, double and triple quantum dot systems, the expressions for GFs and transport observables have been generalised for the quantum dot systems containing N number of quantum dots in series as well as parallel linear array of dots. Further, the formulae so obtained have been used for numerical calculations of transmission probability and the I –V characteristics of linear arrays of quantum dots in series as well as parallel con?guration containing up to three dots. The results show that, with the increase in number of dots in the scattering region, transmission probability and electron current decrease in series case, while both quantities increase in parallel con?guration of dots. The inter-dot tunnelling leads to the splitting of transmission peaks in double QD system in series case whereas, it induces Fano effect in triple QD system in parallel con?guration.
关键词： quantum dots,Quantum transport,non-equilibrium Green function,Landauer–Buttiker formula,linear array of dots
更新于2025-09-23 15:21:01
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Mg-Doped ZnO Nanoparticle Films as the Interlayer between the ZnO Electron Transport Layer and InP Quantum Dot Layer for Light-Emitting Diodes
摘要： Because the wide emission spectrum tunability which range from the visible region to the near-infrared, InP based colloidal quantum dots (QDs) show great promise for use in next-generation full-color displays and solid state lighting. The performance-improved InP QD based light-emitting devices (QLEDs) were fabricated by using Mg doped-ZnO nanoparticles (ZnMgO NPs) as an interlayer between ZnO electron transport layer and active InP QD layer. It is found that ZnMgO NPs can reduce electron injection and suppress exciton quenching which is attributed to the improvement of charge balance in the devices. We successfully demonstrated higher maximum current efficiencies of 5.46 and 5.91 cd/A than the references (2.31 and 2.36 cd/A) without the ZnMgO NP layer in highly efficient red and green QLEDs, respectively. These results signify an effective approach to improve heavy-metal-free QLEDs for commercial applications.
关键词： InP quantum dots,Mg doped-ZnO,electron transport layer,light-emitting diodes,charge balance
更新于2025-09-23 15:21:01
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Theoretical study of influence of electromagnetic stirring on transport phenomena in wire feed laser beam welding
摘要： The additional element from the filler wire in the laser beam welding is usually distributed inhomogeneously in the final weld due to the high solidification rate of weld pool. It has been found that the electromagnetic stirring produced by an external oscillating magnetic field can enhance the material mixing in the weld pool to achieve a more uniform element distribution. However, the magnetic field has a highly nonlinear and multicoupled interaction with the weld pool behavior, which makes the quantitative explanation of the physical mechanism difficult. In this study, the effect of electromagnetic stirring on the transport phenomena in the wire feed laser beam welding is investigated by a numerical modeling. A 3D transient multiphysical model considering the magnetohydrodynamics, heat transfer, fluid flow, keyhole dynamics, and element transport is developed. The multiple reflections and the Fresnel absorption of the laser on the keyhole wall are calculated using the ray tracing method. The numerical results show that a Lorentz force produced by the oscillating magnetic field and its induced eddy current gives significant influence on the transport phenomena in the molten pool. The forward and downward flow is enhanced by the electromagnetic stirring, which homogenizes the distribution of the additional elements from a nickel-based filler wire in a steel weld pool. The numerical results show a good agreement with the high-speed images of the molten pool, the fusion line from the optical micrograph, and the element distribution from the energy dispersive x-ray spectroscopy. This work provides a physical base for the electromagnetic-controlled laser beam welding and some guidance for the selection of electromagnetic parameters.
关键词： magnetohydrodynamics,molten pool dynamics,laser beam welding,element transport
更新于2025-09-23 15:21:01
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Effect of energy band misalignment and morphology in In <sub/>2</sub> O <sub/>3</sub> -CNTs on electron transport in dye-sensitized solar cell
摘要： This study provides important insights in performance degradation of In2O3-MWCNTs (0.4 and 0.5 wt.%)-based dye-sensitized solar cell (DSSC) using chemical-bath deposition technique. In2O3-MWCNTs (0.4 wt.%) exhibited the highest power conversion efficiency of 0.312% with low electron recombination rate, keff of 1256.72 s?1, and faster electron lifetime, seff of 0.80 ms compared to In2O3-MWCNTs (0.5 wt.%). The energy band misalignment between the conduction band of In2O3 photoanode and FTO caused severe electron recombination in In2O3-MWCNTs (0.5 wt.%). Therefore, this study can be used as a benchmark of 0.4 wt.% as the optimum concentration of MWCNTs in In2O3 for DSSC.
关键词： electron transport,optical,dye-sensitized solar cells,Chemical-bath deposition,In2O3-CNTs
更新于2025-09-23 15:21:01
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[IEEE 2019 12th International Conference on Developments in eSystems Engineering (DeSE) - Kazan, Russia (2019.10.7-2019.10.10)] 2019 12th International Conference on Developments in eSystems Engineering (DeSE) - The Effects of Al-Doped ZnO Layer on the Performance of Organic Solar Cell
摘要： The interface properties as well as the solar cell properties of inverted organic solar cells based on PCDTBT:PCBM blends were investigated using sol-gel aluminum doped ZnO as electron transport layers. The effects of Al concentration on the optical, structural and morphological properties of AZO layer were investigated. The results indicate that Al concentration has influenced the grain size growth leading to different surface morphology. High doping concentration resulted in higher charge carrier density and wider band gap. Using AZO layers in organic solar cell has increased their performance; the best performance was observed for the device with 0.5% Al-doped ZnO layer with efficiency of 3.24%, short circuit current density of 8.82mA.cm-2, fill factor of 0.46% and open circuit voltage of 0.81V, whereas the reference device has exhibited an efficiency of 2.9%, short circuit current density of 7.6mA.cm-2, fill factor of 0.48 % and open circuit voltage of 0.785V.
关键词： Electron Transport layer,PCDTBT:PCBM,Organic solar cell,AZO thin films
更新于2025-09-23 15:21:01