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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Toward Coupling Color Centers in Single Crystal Diamond to Two-Dimensional Materials
摘要： Individual nitrogen vacancy (NV) color centers in diamond are bright, photo-stable, atomic-sized dipole emitters [1]. Consequently, they represent optimal candidates for novel scanning near field microscopy techniques [2]. Here, NV centers form one member of a F¨orster Resonance Energy Transfer (FRET) pair. Due to their broadband emission (> 100 nm), NVs are versatile donors for FRET to systems absorbing in the near infrared spectral range. Highly-promising applications include, e.g., nanoscale imaging of fluorescent molecules or nanomaterials like graphene [2]. Critical parameters for FRET are the NV’s quantum efficiency, charge state stability and NV-sample-distance. Previous experiments used NVs in nanodiamond for FRET [2], however these NVs might suffer from quenching, instability and badly controlled surface termination. We here address this issue by using shallowly implanted NV centers in optimized cylindrical nanostructures [3] used as scanning probes in our homebuilt combination of a confocal and an atomic force microscope. In recent years, two-dimensional materials especially monolayers of semiconducting materials are of major interest in research. Particularly, dichalcogenides like, e.g., tungsten diselenide (WSe2) are promising candidates for a varity of applications [4]. WSe2 emits photons at a wavelength of around 750 nm while absorbing photons below 700 nm [4] which renders WSe2 as a promising FRET partner for NV centers. Here, we present first results towards demonstrating the interaction of NV color centers in single crystal diamond with WSe2. We envisage using quenching of the NV center sued as a donor in FRET in close proximity to the 2D material as a valuable sensing ressource.
关键词： F¨orster Resonance Energy Transfer (FRET),tungsten diselenide (WSe2),nitrogen vacancy (NV) color centers,diamond,two-dimensional materials
更新于2025-09-11 14:15:04
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Quantum Multibody Interactions in Halide-Assisted Vapor-Synthesized Monolayer WSe <sub/>2</sub> and Its Integration in a High Responsivity Photodetector with Low-Interface Trap Density
摘要： Among the two-dimensional (2D) transitional-metal dichalcogenides, monolayer (1L) tungsten diselenide (WSe2) has recently attracted a great deal of interest because of its direct band gap and tunable charge transport behavior, making it attractive for a variety of electronic and optoelectronic applications. Controlled and efficient synthesis of 1L WSe2 using chemical vapor deposition (CVD) is often challenging because of the high temperatures required to generate a steady flux of tungsten atoms in the vapor phase from the oxide precursors. Here, the use of halide-assisted low-pressure CVD with NaCl helps to reduce the growth temperature to ～750 °C, which is lower than the typical temperatures needed with conventional CVD for realizing 1L WSe2. Moreover, we experimentally probed the quantum multibody interactions in 1L WSe2 ascribed to excitons, trions, and other localized states by analyzing the temperature-dependent photoluminescence spectra, where such multibody interactions govern the intrinsic electronic and optoelectronic properties of 1L WSe2 for device platforms. The role of the metal?2D semiconductor interface is also critical to realize high-performance devices. In this study, a 1L WSe2-based photodetector was fabricated using Al contacts, which shows a high photoresponsivity, and the interface-state density Dit of the Al/WSe2 junction was computed to be the lowest reported to date ～3.45 × 1012 cm?2 eV?1. Our work demonstrates the tremendous potential of WSe2 to open avenues for state-of-the-art electronic, optoelectronic, and quantum-optoelectronic devices using scalable synthesis routes.
关键词： transitional-metal dichalcogenides,photodetector,tungsten diselenide (WSe2),two-dimensional (2D) materials,quantum multibody interactions,interface-state density,chemical vapor deposition (CVD)
更新于2025-09-11 14:15:04