[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Electric Double Layer Esaki Tunnel Junction in a 40-nm-Length, WSe2 Channel Grown by Molecular Beam Epitaxy on Al203

摘要： An electric-double-layer (EDL) Esaki junction is demonstrated for the first time in a molecular beam epitaxy-grown WSe2 thin-film field-effect transistor (FET). By carefully engineering the strength and spatial extent of the electron-cation and hole-anion EDLs at the WSe2/solid polymer electrolyte polyethylene oxide: cesium perchlorate (PEO:CsClO4) interface, degenerate and abrupt doping profiles are obtained, which are key to enable interband tunneling operations. Gate-tunable negative differential resistance (NDR) is measured at temperatures up to 140 K, with a maximum peak-to-valley current ratio (PVCR) of 3.5 at 110 K, in a 40 nm-long channel device.