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Design and numerical analysis of a graphene-coated fiber-optic SPR biosensor using tungsten disulfide
摘要： This article provides a simple hybrid design and rigorous numerical analysis of a fiber optic–based surface plasmon resonance (SPR) biosensor for DNA hybridization. The sensor core and both sides of the cladding are constructed with optical fiber, whereas the middle portion of the cladding is filled with the proposed hybrid of silver, tungsten disulfide (WS2), graphene, and a sensing medium. To the best of our knowledge, this is the first demonstration of such a highly sensitive SPR biosensor using WS2 for sensing DNA hybridization. The sensitivity, detection accuracy, and figure of merit are considered as the performance parameters and are analyzed in detail. The analyses reveal an impressive enhancement of the overall performance of the proposed sensor. Insertion of a WS2 layer between silver and graphene provides a sensor with sensitivity higher than that of other sensors reported to date. Additionally, concurrent improvement of all performance parameters is shown by this hybrid sensor, which is not the case for sensors based only on graphene. An increased number of graphene-only layers increases the sensitivity and decreases the detection accuracy and figure of merit. Numerical analysis shows that the variation of the SPR angle for mismatched DNA strands is quite negligible, whereas that for complementary DNA strands is considerable, which is essential for proper detection of DNA hybridization. Therefore, the proposed biosensor opens a new window toward detection of biomolecular interactions.
关键词： DNA hybridization,transmittance,surface plasmon resonance angle,Biosensor,sensitivity,tungsten disulfide
更新于2025-09-09 09:28:46
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Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS <sub/>2</sub> Nanosheets
摘要： Solution-processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n-type electrolyte-gated transistors (EGTs) based on porous WS2 nanosheet networks as the semiconductor are demonstrated. The WS2 nanosheets are liquid phase exfoliated to form aqueous/surfactant stabilized inks, and deposited at low temperatures (T < 120 °C) in ambient atmosphere by airbrushing. No solvent exchange, further additives, or complicated processing steps are required. While the EGTs are primarily n-type (electron accumulation), some hole transport is also observable. The EGTs show current modulations > 104 with low hysteresis, channel width-normalized on-conductances of up to 0.27 μS μm?1 and estimated electron mobilities around 0.01 cm2 V?1 s?1. In addition, the WS2 nanosheet networks exhibit relatively high volumetric capacitance values of 30 F cm?3. Charge transport within the network depends significantly on the applied lateral electric field and is thermally activated, which supports the notion that hopping between nanosheets is a major limiting factor for these networks and their future application.
关键词： field-effect transistor,tungsten disulfide,semiconducting nanosheet network,electrolyte-gating,transition-metal dichalcogenide
更新于2025-09-04 15:30:14