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The impacts of LPCVD wrap-around on the performance of n-type tunnel oxide passivated contact c-Si solar cell
摘要： In this paper, Tunnel Oxide Passivated Contact (TOPCon) silicon solar cells with the industrial area (244.32cm2) are fabricated on N-type silicon substrates. Both the ultra-thin tunnel oxide layer and phosphorus doped polycrystalline silicon (polysilicon) thin film are prepared by the LPCVD system. The wrap-around of polysilicon is observed on the surface of borosilicate glass (BSG). The polysilicon wrap-around can form a leakage current path, thus degrades the shunt resistance of solar cells, and leads to the degradation of solar cell efficiency. Different methods are adopted to treat the polysilicon wrap-around and improve shunt resistance of solar cells. The experimental results indicate that a chemical etching method can effectively solve the problem of polysilicon wrap-around and improve the performance of solar cells. Finally, a conversion efficiency of 22.81% has been achieved by our bifacial TOPCon solar cells, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2 and FF of 81.62 %.
关键词： LPCVD,wrap-around,Tunnel oxide passivated contact,polycrystalline silicon thin film
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Impact of Deposition of ITO on Tunnel Oxide Passivating Poly-Si Contact
摘要： In this study, we investigate the impact of the deposition of indium tin oxide (ITO) via DC magnetron sputtering on tunnel oxide passivating poly-Si contacts. Before ITO deposition to the tunnel SiOx passivating n+ poly-Si rear-contact on the cell structure with an SiNx/Al2O3 passivating boron emitter, the implied open-circuit voltage (iVoc) and implied fill factor (iFF) were measured to be 694±10 mV and 83±0.6%, respectively. After ITO sputtering and curing annealing, the iVoc and iFF were almost fully recovered, resulting in the iVoc of 685±11 mV and iFF of 81.9±0.8%. The characteristic of fully recovered effective lifetime is attributed to unique sputtering conditions employing a very low power density at room temperature and curing.
关键词： silicon solar cell,indium tin oxide,transparent conducting oxide,DC magnetron sputtering,tunnel oxide,perovskite,tandem solar cell
更新于2025-09-23 15:19:57
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Influence of SiOx film thickness on electrical performance and efficiency of TOPCon solar cells
摘要： The tunnel oxide passivated contact solar cells (TOPCon) on n-type Cz Si wafers instead of passivated emitter and rear solar cells are currently migrated to mainstream production, with ongoing improvements in recent years. In this study, we investigated and characterized one recent batch of TOPCon cells fabricated on 156.75 ? 156.75 ? 0.18mm3 wafers with fully screen-printed technology by an industrial-type process. TOPCon cells with an efficiency as high as 22.43%, a Voc value as high as 689.4 mV, and a fill factor as high as 81.35% were obtained. The P dopant diffusion in the poly Si layer as well as the thickness of the SiOx layer were optimized in order to obtain good electrical contact between screen-printed Ag and Si. The thickness of the SiOx layer should be over 1.5 nm, which is beneficial for obtaining a good passivation for the cells. The surface P dopant concentration in the polycrystalline Si was higher than 1 ? 1020 atom/cm3, resulted in a low series resistance and a high fill factor. The characterization and simulation results show that both metal shading loss and rear surface recombination were dominant among all of the losses. Application to solar cells with a Voc of 697 mV and a fill factor of 82.45% could lead to an independently confirmed cell efficiency of over 23% for n-type cells with poly Si the herein developed passivated rear contacts, and the front metal contacts by addressing the issue of reducing metal recombination and implementing a selective emitter.
关键词： TOPCon solar cell,Efficiency,Simulation,P diffusion,Tunnel oxide
更新于2025-09-19 17:13:59