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- 2018
- computer statistical experiment
- statistical optimization
- resonant-tunneling diode
- negative voltage current differential resistance
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- heterojunction
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- Bauman Moscow State Technical University
- V.N. Karazin Kharkiv National University
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - The Design of High Performance Si/SiGe-Based Tunneling FET: Strategies and Solutions
摘要： The strategy and solutions in the design of tunneling FET for low voltage/power applications will be addressed in this paper. First, the concept of a face-tunneling scheme to provide a sufficient improvement over the conventional point tunneling has been justified by an experiment. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, face-tunneling FET (f-TFET) can be enhanced in its Ion current. This work shows Ion of f-TFET with one-order magnitude that of point-TFET(control), and the longer the gate length is, the higher the Ion becomes. However, from experimental results, S.S. of f-TFET is a little worse than that of control. This can be better improved by careful treatment of a special design epi-channel, Next, the TFET performance has been proposed by a further design of an improved epitaxial SiGe-based channel structure. The design is based on a raised-drain structure with further improvement on the Ion current and much lower S. S. down to 28mV/dec.
关键词： tunneling FET,raised-drain structure,face-tunneling,point-tunneling,SiGe-based channel,sub-threshold swing,Ion current
更新于2025-09-09 09:28:46
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Impact of band to band tunneling in In <sub/>0.53</sub> Ga <sub/>0.47</sub> As tunnel diodes on the deep level transient spectra
摘要： Peculiar features of the deep level transient spectroscopy (DLTS) measurements on pt (cid:2) i (cid:2) nt In0.53Ga0.47As tunnel diodes are explained. It is shown that due to the high doping of the tunnel diodes and the large band to band tunneling conductance under reverse bias, the DLTS spectrum is prone to erroneous interpretations. We discuss a procedure to identify the cause. In the tunnel diodes, a donor-like hole trap (H1) associated with a point defect, with an activation energy of EV t 0.09 eV and a capture cross-section of (2.4 6 1) (cid:3) 10(cid:2)19 cm2, is identi?ed. In addition to the thermal emission, we report the observation of tunneling emission of holes from the H1 trap.
关键词： band to band tunneling,DLTS,In0.53Ga0.47As,deep level transient spectra,tunnel diodes
更新于2025-09-09 09:28:46
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Tunneling into the vortex state of NbSe <sub/>2</sub> with van der Waals junctions
摘要： We have performed device-based tunnelling spectroscopy of NbSe2 in the vortex state with a magnetic field applied both parallel and perpendicular to the a ? b plane. Our devices consist of layered semiconductors placed on top of exfoliated NbSe2 using the van der Waals transfer technique. At zero field, the spectrum exhibits a hard gap, and the quasiparticle peak is split into low and high energy features. The two features, associated with the effective two-band nature of superconductivity in NbSe2, exhibit markedly distinct responses to the application of magnetic field, suggesting an order-of-magnitude difference in the spatial extent of the vortex cores of the two bands. At energies below the superconducting gap, the hard gap gives way to vortex-bound Caroli-de Gennes-Matricon states, allowing the detection of individual vortices as they enter and exit the junction. Analysis of the sub-gap spectra upon application of parallel magnetic field allows us to track the process of vortex surface formation and spatial rearrangement in the bulk.
关键词： two-band superconductivity,vortices,Tunneling,NbSe2
更新于2025-09-09 09:28:46
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[Advances in Intelligent Systems and Computing] Modelling and Simulation in Science, Technology and Engineering Mathematics Volume 749 (Proceedings of the International Conference on Modelling and Simulation (MS-17)) || Computation of Current Density in Double Well Resonant Tunneling Diode Using Self-consistency Technique
摘要： Double well resonant tunneling diode is analytically simulated for different constituent layer widths, and also for different operating temperatures. Peak current densities are obtained at particular bias values, which speak for eigenstates alignment between adjacent quantum wells. Self-consistency technique is incorporated for simulation purpose which provides accurate result regarding the position of the peaks, optimum structural parameters in order to obtain that magnitude, and the junction temperature to obtain measurable current at the applied bias range. It may also be noted that current increases with increase in temperature. Two different dimension set are used for simulation in order to reveal the external influence on electrical properties of the device. Different dimensions of contact regions also help to analyze fluctuations in peak current profile. Thus the device can be operated at those biasing points, where peaks are appeared.
关键词： Resonant tunneling diode,Self-consistency technique,Quantum transport,Current density,Semiconductor heterostructures
更新于2025-09-09 09:28:46
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Two-level system damping in a quasi-one-dimensional optomechanical resonator
摘要： Nanomechanical resonators have demonstrated great potential for use as versatile tools in a number of emerging quantum technologies. For such applications, the performance of these systems is restricted by the decoherence of their fragile quantum states, necessitating a thorough understanding of their dissipative coupling to the surrounding environment. In bulk amorphous solids, these dissipation channels are dominated at low temperatures by parasitic coupling to intrinsic two-level system (TLS) defects; however, there remains a disconnect between theory and experiment on how this damping manifests in dimensionally reduced nanomechanical resonators. Here, we present an optomechanically mediated thermal ringdown technique, which we use to perform simultaneous measurements of the dissipation in four mechanical modes of a cryogenically cooled silicon nanoresonator, with resonant frequencies ranging from 3–19 MHz. Analyzing the device’s mechanical damping rate at fridge temperatures between 10 mK and 10 K, we demonstrate quantitative agreement with the standard tunneling model for TLS ensembles con?ned to one dimension. From these ?ts, we extract the defect density of states (P0 ～ 1?4 × 1044 J?1 m?3) and deformation potentials (γ ～ 1–2 eV), showing that each mechanical mode couples on average to less than a single thermally active defect at 10 mK.
关键词： Quantum technologies,Nanomechanical resonators,Optomechanical,Mechanical damping rate,Deformation potentials,Tunneling model,Defect density of states,Two-level system (TLS) defects,Silicon nanoresonator
更新于2025-09-09 09:28:46
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Supercontinuum manipulation based on the influence of chirp on soliton spectral tunneling
摘要： The soliton spectral tunneling (SST) effect, as a soliton spectral switching phenomenon, enables a soliton to tunnel through a spectrally limited regime of normal dispersion in the fiber with multiple zero dispersion wavelengths (ZDWs). Since initial chirp can affect the behavior of pulse evolution, we numerically study the influence of chirp on the SST in the process of supercontinuum (SC) occurring in a photonic crystal fiber (PCF) with three ZDWs. The linear chirp is imposed by a phase modulation of input pulse while maintaining a constant pulse duration. Interestingly, it is found that the spectral range and flatness can be flexibly tuned by adjusting the initial chirp value. More specifically, positive chirp facilitates soliton self-frequency shifting (SSFS), making the soliton quickly transfer from one anomalous dispersion regime to another accompanied by the generation of dispersive waves (DWs). In this case, the SST effect further expands the spectral range by enhancing both the red-shift of the fundamental soliton and the blue-shift of DWs, thus generating a broader SC. However, negative chirp suppresses the SST effect, resulting in a smoother SC at the expense of bandwidth. Therefore, the findings in this work provide interesting results relating to the influence of initial chirp on the SST to generate a considerably smoother and broader SC, which is extremely useful in many applications, such as wavelength conversion and SC generation.
关键词： soliton spectral tunneling,chirp,supercontinuum generation
更新于2025-09-09 09:28:46
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[IEEE 2018 Conference on Emerging Devices and Smart Systems (ICEDSS) - Tiruchengode, India (2018.3.2-2018.3.3)] 2018 Conference on Emerging Devices and Smart Systems (ICEDSS) - A Comparison of Analytical Modeling of Double Gate and Dual material Double GateTFETs with high-KStacked Gate-Oxide Structure forLow power Applications
摘要： In this paper, an analytical comparative study of Double Gate Tunnel Field Effect Transistors(DG-TFETs) and Dual Material Double Gate Tunnel Field Effect Transistors(DMDG-TFETs) with high-K stacked gate oxide structure are presented. The modeling is done by solving the Poisson’s equation with Parabolic Approximation Technique with suitable boundary conditions. By using channel potential model, Surface potential is calculated.The Drain current model is developed by integrating band to band tunneling generation rate. The different electrical characteristics like surface potential, Electric field and Drain current have been compared for both TFETs in this paper. On comparing DG-TFETs with Dual material, DMDG-TFETs provide an enhanced performance. The analytical results are also compared with TCAD simulated results for both the devices and good agreement is observed.
关键词： Band-to-band tunneling (BTBT),Tunnel FET (TFET),Dual-material (DM) gate,Parabolic Approximation Technique
更新于2025-09-09 09:28:46
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Spin-resonant tunneling in CdTe/Cd1-xMnxTe double-barrier heterostructures with zero external field
摘要： Spin-dependent resonant tunneling in CdTe/CdMnTe double-barrier heterostructures was theoretically investigated. The transfer-matrix method was employed to study the spin transport properties under zero applied field. The effect of Dresselhaus spin-orbit coupling was considered in the symmetrical heterostructure. The influences of the barrier width and height on the polarization efficiency, barrier transparency and dwell time of light and heavy holes were observed and discussed.
关键词： dwell time,resonant tunneling,transfer matrix,symmetric heterostructures,resonance polarization
更新于2025-09-09 09:28:46
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Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs
摘要： Being fundamentally limited to a current–voltage steepness of 60 mV/dec, MOSFETs struggle to operate below 0.6 V. Further reduction in VDD and, consequently, power consumption can be achieved with novel devices, such as tunneling transistors (TFETs) that can overcome this limitation. TFETs, however, face challenges with low ON-current leading to slow performance. TFETs made from III-nitride heterostructures are quite promising in this regard. The lattice mismatch induces a piezoelectric polarization field in a nitride heterojunction that can boost the ON-current. However, it is shown here that the carrier thermalization at the heterointerface degrades the subthreshold characteristics. Therefore, a good design should minimize the number of confined quantum well (QW) states at the heterointerface so as not to degrade the subthreshold characteristics while maintaining the lattice mismatch induced polarization to boost the ON-current. We show here that an InAlN QW on an InGaN substrate alloy engineered TFET design is promising to fulfill these requirements. Proper engineering of the alloy mole fractions and the width of the well can eliminate (or at least minimize) the undesired thermalization effects and, at the same time, provide a lattice mismatch to induce a piezoelectric field for boosting the ON-current. We have used a suitable atomistic quantum transport model to simulate these devices. The model accounts for the different mechanisms that are involved, and captures realistic scattering thermalization effects. This model has been benchmarked in our earlier work with experimental measurements of nitride tunneling heterojunction diodes and is used here to optimize the alloy engineered nitride TFET.
关键词： EQNEQ,band-to-band tunneling (BTBT),phenomenological scattering,nitrides,TFET,tight binding (TB),Atomistic,nonequilibrium Green’s function (NEGF),internal polarization,steep devices
更新于2025-09-09 09:28:46
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-II
摘要： The basic and the charge density wave (CDW) structures of the monoclinic NbS3-II polymorph were studied by synchrotron x-ray diffraction, ab initio calculations, simulation of electron diffraction patterns, and by atomic-resolution transmission electron and low-temperature scanning tunneling microscopies. It is con?rmed that the basic structure belongs to the space group P 21/m and is described with a unit cell, formed of four pairs of symmetry-related trigonal prismatic (TP) columns [a0 = 0.96509(8) nm, b0 = 0.33459(2) nm, c0 = 1.9850(1) nm, and β0 = 110.695(4)?]. The incommensurate components of the two CDWs, (cid:3)q1 = (0, 0.298, 0) and (cid:3)q2 = (0, 0.352, 0), are related as q1b + 2q2b ≈ 1. Both CDWs form their own modulation patterns with unit cells (am = 2a0, bm = b0/qjb, cm = c0, βm = β0) and are ordered along adjacent isosceles TP columns either pairwise or with both columns modulated by either the (cid:3)q1 or (cid:3)q2 CDW only. The CDWs are ordered according to one of the two possible modulation pattern space groups, Cm or C2/m. If considered as long-period commensurate, the entire modulated structure with both CDWs included is described within experimental error with an enlarged unit cell (a = 2a0, b = 37b0, c = c0, and β = β0) and with all atoms displaced from their average positions in accord with the speci?ed modulation pattern.
关键词： synchrotron x-ray diffraction,ab initio calculations,charge density wave,scanning tunneling microscopy,transmission electron microscopy,NbS3-II
更新于2025-09-09 09:28:46