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Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates
摘要： Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates grown by hydride vapor phase epitaxy. Detailed material characterization was performed, and the results indicate the superiority of Ge doping in the GaN, which contributed to the SBDs with lower stress, fewer defects and higher quality. Based on the capacitance-voltage and currentevoltage measurements performed, SBDs achieved together with a low turn-on voltage Von (0.71e0.74 V), high current Ion/Ioff ratio (3.9 (cid:1) 107e2.9 (cid:1) 108), high Schottky barrier height (0.96e0.99 eV), and high breakdown voltage Vb (802 V for a 100 mm diameter). This shows that vertical GaN SBDs on the Ge-doped substrates are promising candidates for high power applications.
关键词： GaN device,Vertical SBDs,Low turn-on voltage,Ge-doped GaN substrates,High breakdown voltage
更新于2025-09-23 15:23:52
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A novel GaN-based lateral SBD with a TUG-AlGaN/GaN heterojunction
摘要： In this study, a novel GaN-based lateral Schottky barrier diode (SBD) with a thin upward graded AlGaN (TUG-AlGaN) barrier layer is proposed and investigated. The TUG-AlGaN layer upward graded from 0 to 0.50 mole fraction is used to replace the thick AlGaN layer of the heterojunction, which can reduce the distance from the 2-D electron gas (2DEG) to the Anode electrode, retain high density of 2DEG near the heterojunction, and eliminate the abrupt AlGaN/GaN conduction band offset at same time, subsequently can reduce the turn-on voltage and on-state voltage. The simulated results show that compared with the conventional SBD (with 25 nm Al0.23Ga0.77N layer), the proposed SBD achieves 0.32V reduction in turn-on voltage, and 1.21V reduction in on-state voltage. Meanwhile, although the proposed SBD doesn’t deliver obvious improvement in static characteristics when compared with the GaN-Based lateral field-effect rectifier (L-FER) (with 25 nm Al0.23Ga0.77N layer), the reverse recovery time of the proposed SBD is much smaller than that of the L-FER (with 25 nm Al0.23Ga0.77N layer). The outstanding static characteristics combined with excellent switching characteristics reveal its great potential for future power applications.
关键词： turn-on voltage,switching characteristics,thin upward graded AlGaN barrier layer,GaN-based lateral Schottky barrier diode
更新于2025-09-23 15:22:29
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Effect of Proton Radiation on Ultra-Wide Bandgap AlN Schottky Barrier Diodes
摘要： Lateral Pd/n-AlN Schottky barrier diodes (SBDs) were fabricated and subjected to 3 MeV proton irradiation at various fluences. Electrical and material characterization analysis was performed before and after each radiation fluence to quantify the change in device characteristics. It was found that the SBDs performed reliably up to a proton irradiation fluence of 5×1013 cm-2, with little or no change in the key device performance such as current, turn-on voltage, ideality factor, and breakdown voltage, etc. The electrical characteristics of the SBDs was well predicted using a standard thermionic emission theory. The performance of the SBDs showed a significant degradation after a high-fluence irritation of 5×1015 cm-2, where the current of the SBDs dropped two orders of magnitude. Material and surface characterizations, including atomic force microscopy and X-ray diffraction, indicated a consistent degradation in the AlN bulk crystal quality and a drastic increase in surface roughness. These results provide valuable information on the radiation properties of AlN electronics and can serve as important references for the future development of high performance AlN devices for extreme environment applications.
关键词： surface roughness,leakage current,radiation effects,Aluminum nitride,breakdown voltage,barrier height,Schottky barrier diodes,ideality factor,turn on voltage
更新于2025-09-11 14:15:04