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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Wet-Chemically Textured Ultra-Thin GaAs Solar Cells with Dielectric/Metal Rear Mirrors
摘要： The rear-side contact layer of ultra-thin GaAs solar cells was textured using a simple, one-step wet chemical approach. A ZnS/Ag double layer was conformally deposited to function as a diffusive rear mirror. Local Ohmic contact points provided electrical contact directly to the Ag. The textured solar cells were compared with planar reference cells fabricated on the same wafer and a clear enhancement of long-wavelength quantum efficiency and short-circuit current was observed in the textured cells. Both architectures showed FF > 80% and VOC > 1 V. Additionally, the rear-side texture increases the external luminescent efficiency by enhancing outcoupling of luminescence.
关键词： light trapping,ultra-thin GaAs solar cells,dielectric mirror,wet etching
更新于2025-09-23 15:19:57
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A facile light‐trapping approach for ultrathin GaAs solar cells using wet chemical etching
摘要： Thinning down the absorber layer of GaAs solar cells can reduce their cost and improve their radiation hardness, which is important for space applications. However, the lighttrapping schemes necessary to achieve high absorptance in these cells can be experimentally challenging or introduce various parasitic losses. In this work, a facile lighttrapping approach based on wet chemical etching is demonstrated. The rear‐side contact layer of ultrathin GaAs solar cells is wet‐chemically textured in between local Ohmic contact points using an NaOH‐based etchant. The resulting contact layer morphology is characterized using atomic force microscopy and scanning electron miscroscopy. High broadband diffuse reflectance and haze factors are measured on bare and Ag‐coated textured contact layers. The textured contact layer is successfully integrated as a diffusive rear mirror in thin‐film solar cells comprising a 300‐nm GaAs absorber and Ag rear contact. Consistent increases in short‐circuit current density (JSC) of approximately 3 mA cm?2 (15%) are achieved in the textured cells, while the open‐circuit voltages and fill factors do not suffer from the textured rear mirror. The best cell achieves a JSC of 24.8 mA cm?2 and a power conversion efficiency of 21.4%. The textured rear mirror enhances outcoupling of luminescence at open circuit, leading to a strong increase in the external luminescent efficiency.
关键词： ultra‐thin GaAs,wet etching,textured III‐V solar cells,light trapping,luminescence outcoupling
更新于2025-09-12 10:27:22