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Heteroepitaxial growth of thick <i>α</i> -Ga <sub/>2</sub> O <sub/>3</sub> film on sapphire (0001) by MIST-CVD technique
摘要： The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire (0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-half-maximum (FWHM) of rocking curves for the (0006) and (10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm?2, respectively, indicative of high single crystallinity. The out-of-plane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively. The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors.
关键词： chemical vapor deposition,ultra-wide bandgap semiconductor,gallium oxide,epitaxy
更新于2025-09-23 15:22:29
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Progress of power field effect transistor based on ultra-wide bandgap Ga <sub/>2</sub> O <sub/>3</sub> semiconductor material
摘要： As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.
关键词： ultra-wide bandgap semiconductor,field effect transistor (FET),power device,gallium oxide (Ga2O3)
更新于2025-09-19 17:15:36
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Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
摘要： The use of ultra-wide bandgap transparent conducting beta gallium oxide (b-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the ShockleyeQueisser limit for open-circuit voltage (Voc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides.
关键词： Bulk photovoltaic effect,Pb(Zr,Ti)O3,Solar cell architecture,Ferroelectric photovoltaics,Ga2O3,Gallium oxide,Transparent conducting oxide,Ultra-wide bandgap semiconductors
更新于2025-09-16 10:30:52
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RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates
摘要： Al-rich AlGaN-channel high electron mobility transistors (HEMTs) with 80 nm long gates and 85% (70%) Al in the barrier (channel) were evaluated for RF performance. DC characteristics include a maximum current of 160 mA/mm with transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of 109. fT of 28.4 GHz and fMAX of 18.5 GHz were determined from small-signal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.
关键词： high electron mobility transistor,Ultra-wide-bandgap,RF performance,HEMT,aluminum gallium nitride
更新于2025-09-09 09:28:46
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Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa <sub/>2</sub> O <sub/>4</sub> single crystals
摘要： Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 ?C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are characterized by a stoichiometric or near-stoichiometric composition with a normal spinel structure at room temperature and by a narrow full width at half maximum of the rocking curve of the 400 peak of (100)-oriented samples of 23 arcsec. ZnGa2O4 is a single crystalline spinel phase with the Ga/Zn atomic ratio up to about 2.17. Melt-grown ZnGa2O4 single crystals are thermally stable up to 1100 and 700 ?C when subjected to annealing for 10 h in oxidizing and reducing atmospheres, respectively. The obtained ZnGa2O4 single crystals were either electrical insulators or n-type semiconductors/degenerate semiconductors depending on growth conditions and starting material composition. The as-grown semiconducting crystals had the resistivity, free electron concentration, and maximum Hall mobility of 0.002–0.1 ?cm, 3 × 1018–9 × 1019 cm?3, and 107 cm2 V?1 s?1, respectively. The semiconducting crystals could be switched into the electrically insulating state by annealing in the presence of oxygen at temperatures ≥700 ?C for at least several hours. The optical absorption edge is steep and originates at 275 nm, followed by full transparency in the visible and near infrared spectral regions. The optical bandgap gathered from the absorption coef?cient is direct with a value of about 4.6 eV, close to that of β-Ga2O3. Additionally, with a lattice constant of a = 8.3336 ?, ZnGa2O4 may serve as a good lattice-matched substrate for magnetic Fe-based spinel ?lms.
关键词： high mobility,melt growth,high quality,ultra-wide bandgap,conductive,single crystals,ZnGa2O4
更新于2025-09-04 15:30:14