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Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well
摘要： We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is mediated by extra holes, and can be switched between ferro- and antiferromagnetic one by gating the structure. A proper choice of Mn concentrations in the delta-layers and of local degree of disorder enables fabrication of a ferrimagnetic structure supporting ultrafast switching of magnetization by short pulses of electric bias without an external magnetic field. The switching mechanism in the structure relies on kinetic spin exchange between the two delta-layers which is mediated by exchange scattering of electric-pulse heated holes by magnetic ions within the layers. Owing to specific interplay between characteristics of the exchange scattering, spin decay times, and the heat withdraw in the suggested synthetic ferrimagnetic semiconductor, the necessary parameters of electric-bias pulse are within the technologically accessible range, and do not contradict typical thermal kinetics of semiconductor structures.
关键词： ultrafast heating,GaAs quantum well,synthetic ferrimagnet,ultrafast switching of magnetization
更新于2025-09-19 17:13:59
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Ultrafast electron transfer through silicon-vacuum interface induced by the action of intense femtosecond laser pulse
摘要： A theoretical study of the influence of a quasistationary electric field formed during emission separation of charges on ultrafast electron transfer near the silicon-vacuum interface irradiated by femtosecond laser pulses was carried out. The values of the strength of the arising quasistationary field during irradiation by femtosecond pulses with fluences near and above the silicon damage thresholds were estimated. The possibility of the formation of a dynamic optically layered structure in the near-surface layers of silicon irradiated by a femtosecond pulse resulting from a modification of its optical properties due to the depletion of electrons in the surface layer was studied. It is suggested that the time-depending dipole moment induced by the emission separation of charges should lead to the generation of electromagnetic radiation from the terahertz frequency range. The basic properties of this radiation were theoretically investigated.
关键词： Coulomb explosion,silicon,ultrafast heating,terahertz radiation,electron emission,electron transfer,femtosecond laser pulse
更新于2025-09-12 10:27:22