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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
摘要： Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
关键词： Breakdown electric field,Baliga’s figure of merit,On-resistance,Ultrawide bandgap semiconductor,Gallium oxide (Ga2O3),Power device,Schottky barrier diode (SBD)
更新于2025-09-23 15:22:29
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Ultrathin Polymer Nanofibrils for Solar-Blind Deep Ultraviolet Light Photodetectors Application
摘要： Solar-blind deep ultraviolet photodetectors (DUVPDs) based on conventional inorganic ultrawide bandgap semiconductors (UWBS) have shown promising application in various civil and military fields and yet they can hardly be used in wearable optoelectronic devices and systems for lack of mechanical flexibility. In this study, we report a non-UWBS solar-blind DUVPD by designing ultrathin polymer nanofibrils with a virtual ultrawide bandgap, which was obtained by grafting P3HT with PHA via a polymerization process. Optoelectronic analysis reveals that the P3HT-b-PHA nanofibrils are sensitive to DUV light with a wavelength of 254 nm but are virtually blind to both 365 nm and other visible light illuminations. The responsivity is 120 A/W with an external quantum efficiency of up to 49700%, implying a large photoconductive gain in the photoresponse process. The observed solar-blind DUV photoresponse is associated with the resonant mode due to the leakage mode of the ultrathin polymer nanofibrils. Moreover, a flexible image sensor composed of 10 × 10 pixels can also be fabricated to illustrate their capability for image sensing application. These results signify that the present ultrathin P3HT-b-PHA nanofibrils are promising building blocks for assembly of low-cost, flexible, and high-performance solar-blind DUVPDs.
关键词： image sensor,leakage mode,Optoelectronic device,polymer nanostructures,virtual ultrawide bandgap semiconductor
更新于2025-09-11 14:15:04
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Gallium Oxide || MBE growth and characterization of gallium oxide
摘要： Gallium oxide (Ga2O3) is an ultrawide bandgap (UWBG) oxide semiconductor with an indirect bandgap of 4.5–5.2 eV. The beta-phase (β-Ga2O3) is the commonly regarded as most stable of the several crystalline phases (or polymorphs) of Ga2O3. Because of its wide bandgap, it is transparent from ultraviolet to visible wavelengths. It had first been widely explored as a transparent conductive oxide (TCO) for optical devices such as light-emitting diodes. Also, it has been used as a gate dielectric in metal oxide semiconductor (MOS) structures in GaAs. The β-Ga2O3 can be synthesized by melt growth techniques such as Czochraski, floating zone (FZ), and edge-defined film-fed growth (EFG) at atmospheric pressure which can provide inexpensive large area bulk substrates. The commercial availability of large area Ga2O3 substrates is an important advantage over GaN and similar group III-N compound semiconductors in many potential electrical and optical device applications. Besides material benefit of UWBG, these substrates provide a high-quality crystalline platform for power electronics devices that require higher crystalline quality, low-defect density material with precise doping control capabilities.
关键词： β-Ga2O3,MBE growth,Gallium oxide,ultrawide bandgap,heteroepitaxy,homoepitaxy
更新于2025-09-09 09:28:46
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Gallium Oxide || Hydrogen in Ga2O3
摘要： Semiconductors with bandgaps larger than the 3.4 eV bandgap of GaN are emerging as a new class of ultrawide-bandgap (UWBG) electronic materials [1–5]. In spite of the promising applications that are possible for UWBG materials, an understanding of their fundamental properties is at an early stage of development. The focus of this chapter is the hydrogen impurity and its interactions with other defects in β-Ga2O3, a transparent conducting oxide with an ultrawide bandgap of 4.9 eV [6–9]. (It is the most thermally stable monoclinic β phase of Ga2O3 to which we refer throughout this chapter.)
关键词： transparent conducting oxides,Hydrogen,defects,ultrawide-bandgap semiconductors,Ga2O3
更新于2025-09-09 09:28:46