- 标题
- 摘要
- 关键词
- 实验方案
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Switchable Schottky contacts: Simultaneously enhanced output current and reduced leakage current
摘要： Metal-semiconductor contacts are key components of nanoelectronics and atomic-scale integrated circuits. In these components Schottky diodes provide a low forward voltage and a very fast switching rate but suffer the drawback of a high reverse leakage current. Improvement of the reverse bias characteristics without degrading performance of the diode at positive voltages is deemed physically impossible for conventional silicon-based Schottky diodes. However, in this work we propose that this design challenge can be overcome in the organic-based diodes by utilizing reversible transitions between distinct adsorption states of organic molecules on metal surfaces. Motivated by previous experimental observations of controllable adsorption conformations of anthradithiophene on Cu(111), herein we use density functional theory simulations to demonstrate the distinct Schottky barrier heights of the two adsorption states. The higher Schottky barrier of the reverse bias induced by chemisorbed state results in low leakage current; while the lower barrier of the forward bias induced by physisorbed state yields a larger output current. The rectifying behaviors are further supported by nonequilibrium Green's function transport calculations.
关键词： van der Waals forces,Schottky contacts,Schottky barrier height,reverse leakage current,bistable state
更新于2025-09-23 15:23:52
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Cavity-QED interactions of several atoms
摘要： We study many-atom van der Waals forces arising from reversible atom–field interactions in cavity quantum electrodynamics by using a dressed-state approximation. In the most general case, a single-mode Dicke model for atoms, sharing an arbitrary number of excitations, placed in an imperfect cavity has been developed that leads to the vdW potential of such system. As special cases, we consider the single-excitation Dicke model and also the case of one atom in the presence of multi-photon excitation inside the cavity. In most of the paper, it is assumed that the atoms are distributed symmetrically with respect to the mode structure. This will decouple all asymmetric states, allowing us to ignore them throughout our calculations. The impact of asymmetric states is taken into account for a system wherein one atom, freely placed in a cavity, together with n ? 1 equally-coupled atoms is interacting with the cavity field. By assuming broadened Lorentzian modes instead of sharp ones, the cavity imperfections have been added to the calculations. The position dependence of the effective Rabi frequency is studied for the example of a planar cavity.
关键词： cavity quantum electrodynamics,van der Waals forces,planar cavity,dressed-state approximation,Dicke model,Rabi frequency
更新于2025-09-04 15:30:14