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oe1(光电查) - 科学论文

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  • [IEEE 2019 21st International Conference on Transparent Optical Networks (ICTON) - Angers, France (2019.7.9-2019.7.13)] 2019 21st International Conference on Transparent Optical Networks (ICTON) - Development of 850 nm and 910 nm Vertical-Cavity Surface-Emitting Lasers for 50-100 Gb/s Applications

    摘要: New generation of datacom standards require vertical cavity surface emitting lasers (VCSELs) operating at data rates beyond 50 Gbaud in on-off-keying (NRZ) and pulse amplitude modulation (PAM4) formats. New applications in Ethernet also demand extended wavelength range of the devices to enable wavelength division multiplexing (WDM) in multimode fiber. We report on 850 nm and 910 nm single mode industrial technology VCSELs capable for error free NRZ data transmission at 60 Gb/s over 800 m and 400 m of OM5 multimode fiber (MMF), respectively. Both types of VCSELs are also suitable for PAM4 transmission up to 60 Gbaud.

    关键词: data transmission,multimode fiber,vertical cavity surface–emitting laser,oxide aperture,wavelength division multiplexing

    更新于2025-09-12 10:27:22

  • [IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Electrical Properties of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

    摘要: We present a comprehensive description of electrical properties of vertical-cavity surface-emitting lasers (VCSELs) based on a drift-diffusion model applied to carrier transport in 3D multilayer semiconductor laser heterostructure with a p-n junction. We address the impact of interface grading in distributed Bragg reflectors (DBRs), modulation doping of the DBRs and surrounding layers of the quantum well (QW) as well as material-dependent carrier mobilities and recombination constants and are focused on oxide-confined GaAs/AlGaAs VCSELs. We evaluate both depletion and diffusion capacitance and show that both contributions to the capacitance as well as the differential series resistance critically depend on the injection current and chip design such that, in general, VCSEL cannot be properly modeled by an equivalent circuit approximation. Current profiles demonstrate significant increase of the current density at the edges of the oxide-confined aperture (current crowding) which could be suppressed by a proper design.

    关键词: current crowding,differential resistance,oxide aperture,carrier transport,capacitance,modulation frequency bandwidth,vertical cavity surface-emitting laser

    更新于2025-09-12 10:27:22

  • Cavity solitons in driven vertical-cavity-surface-emitting lasers above threshold as all-optical frequency mixers

    摘要: Through numerical experiments, we show the ability of cavity solitons (CSs) forming in injection locked vertical-cavity-surface-emitting lasers to act as frequency mixers owing to their nonlinear essence. A conventional electronic frequency mixer employs two oscillators, local and signal, and generates different combined frequencies from those of the input. It is specifically shown here that considering various configurations for the device by arranging the local and signal oscillators, CSs can be cast as all-optical or optoelectronic frequency mixers. The feasibility of the proposed schemes has been checked via the frequency mismatch between the two oscillators and their relative strength.

    关键词: cavity soliton,vertical-cavity-surface-emitting laser (VCSEL),modulation

    更新于2025-09-11 14:15:04

  • Wearable SiPM-based NIRS Interface Integrated with Pulsed Laser Source

    摘要: We present the design of a miniaturized probe integrating silicon photomultiplier and light-pulsing electronics in a single 2x2mm2 CMOS chip which includes functional blocks such as a fast pulse-laser driver and synchronized single-photon detection circuit. The photon pulses can be either counted on-chip or processed by an external high-speed electronic module such as time-corelated single photon counting (TCSPC) unit. The integrated circuit was assembled on a printed circuit board (PCB) and also on a 2.5D silicon interposer platform of size 1 cm and interfaced with a silicon photomultiplier (SiPM), vertical cavity surface emitting laser (VCSEL) and other ancillary components such as capacitors and resistors. Our approach of integrating an optical interface to optimize light collection on the small active area and light emission from the vertical-cavity surface-emitting laser (VSCEL) will facilitate clinical adoption in many applications and change the landscape of Near Infrared Spectroscopy (NIRS) hardware commercially due to significant optode-size reduction and the elimination of optical fibers.

    关键词: Near-Infrared Spectroscopy (NIRS),Time-Domain (TD),complementary metal-oxide-semiconductor (CMOS),Vertical Cavity Surface Emitting Laser (VCSEL),Silicon Photomultiplier (SiPM),Optical Probe

    更新于2025-09-11 14:15:04

  • Graphene quantum dot vertical cavity surface emitting lasers

    摘要: Nonzero-bandgap graphene quantum dots (GQDs) are novel optical gain materials promising for solution-processed light sources with high cost efficiency and device performance. To date, there have only been a few reports on the realization of GQDs-based lasers. Herein, we demonstrate for the first time room-temperature lasing emission with green gamut from GQDs in a vertical optical cavity composed of Ta2O5/SiO2 dielectric distributed Bragg reflectors (DBRs). The lasing is enabled by the unique design of the DBR which not only provides a wide stopband spectrally overlapping with the emission of the GQDs but also allows high transmittance of optical excitation in the UV-light region. This demonstration is a clear evidence of the use of GQDs as optical gain materials and represents an important step forward toward their potential applications in wide-gamut laser displays and projectors.

    关键词: Vertical Cavity Surface Emitting Laser,Graphene Quantum Dots,Green Gap,Microwave-Assisted Hydrothermal Method,Distributed Bragg Reflectors (DBRs)

    更新于2025-09-11 14:15:04

  • VCSEL-based differential modulation technique for high-speed gigabit passive optical networks

    摘要: With the convergence towards 5G, optical networks need to be upgraded to support the emerging data tsunami. This work experimentally demonstrates the first real-time transmission of 20 Gbps over a class 10G 1550 nm vertical cavity surface emitting laser (VCSEL) in the context of on-off-keying (OOK) modulation format, by employing VCSEL differential drive mode technique, for adoption in high-speed gigabit passive optical networks (GPONs). Two OOK data streams each with 10 Gbps are differentially modulated onto a single VCSEL, therefore generating an aggregated data rate of 20 Gbps OOK signal. A receiver sensitivity of -13.36 dBm is experimentally achieved. Through extinction ratio optimization, an error free transmission over 24.7 km single mode fibre is attained, with a transmission penalty of 1.91 dB. Our proposed technique alleviates band-limitation of the VCSEL carrier, and doubles the channel data rate without replacing the transmitter optics.

    关键词: optical fibre,on–off-keying,passive optical network,Vertical cavity surface emitting laser

    更新于2025-09-10 09:29:36

  • Frequency-induced polarization switching and bistability in a 1550?nm VCSEL subject to parallel optical injection

    摘要: We experimentally investigate frequency-induced polarization switching (PS) and bistability (PB) characteristics in a 1550 nm vertical-cavity surface-emitting laser (1550 nm VCSEL) subject to parallel optical injection, for which the polarization direction of the injection light is along with the direction of dominant polarization mode in the solitary 1550 nm VCSEL. The results show that, for a 1550 nm VCSEL under parallel optical injection with frequency detuning ?ν (= νinj ? ν0, where νinj is the frequency of injection light and ν0 is the frequency of dominant polarization mode of the solitary 1550 nm VCSEL), type I PS (the dominant polarization mode switches from Y-polarization mode with a shorter wavelength to X-polarization mode with a longer wavelength) and type II PS (the dominant polarization mode switches from X-polarization mode to Y-polarization mode) can be observed through continuously scanning the frequency of injection light. Moreover, the values of ?ν required for generating PSs are dependent on the variation route, namely frequency-induced PB phenomenon occurs. In the region with negative ?ν, there exist two hysteresis loops, whose widths are seriously influenced by the injection power and the biased current.

    关键词: 1550 nm vertical-cavity surface-emitting laser (1550 nm VCSEL),Polarization bistability (PB),Parallel optical injection,Polarization switching (PS)

    更新于2025-09-09 09:28:46