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Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters
摘要： We exhibit both experimentally and theoretically a novel growth mode for the epitaxy of AlGaN quantum dots (QD), where they are eventually produced without their usual surrounding wetting layer. If the generic evolution of QD is ruled by the elastic relaxation and capillary effects, evaporation occurs here on a time scale similar to that of growth. Using a dedicated surface diffusion model accounting for elasticity, wetting and anisotropy, we evidence numerically different kinetic regimes as a function of the evaporation flux, that rationalize the experimental outcome. The resulting QD are characterized by enhanced optical properties compared to the common QD with a wetting layer. These nanostructures are promising candidates for deep ultraviolet light emitting diodes.
关键词： epitaxy,ultra-violet emitters,evaporation,quantum dots,wetting-layer
更新于2025-09-23 15:21:01
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Temperature and hydrostatic pressure effects on the electronic structure, optical properties of spherical segment quantum dot/wetting layer and group velocity of light
摘要： To investigate hydrostatic pressure and temperature effects on electron energy levels of an InAs spherical segment quantum dot with wetting layer embedded in GaAs barrier, we use the finite element method to solve the Schr?dinger equation in the effective mass approximation. Results show that the ground, the first and the second excited state energies decrease (increase) as the hydrostatic pressure (temperature) increases for the constant temperature (pressure). Moreover, given the optical properties of the system interacting with two laser fields, red (blue) shifts are observed in the linear and nonlinear absorptions and dispersions for the probe pulse as the hydrostatic pressure (temperature) increases. Furthermore, as the hydrostatic pressure increases, the maximum of the group velocity of light inside the slow light frequency range increases and the slow light frequency range shifts to the lower probe frequencies.
关键词： temperature,group velocity of light,hydrostatic pressure,optical property,quantum dot/wetting layer
更新于2025-09-23 15:21:01
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Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation
摘要： InAs quantum dots (QDs) have been grown on a GaAs (001) substrate in the subcritical region of InAs coverage for transition from a 2-dimensional (2D) to a 3-dimensional growth mode. Evolution of QDs and the corresponding wetting layer (WL) with InAs coverage has been investigated. Under specific growth conditions, quantum dot formation was observed only in samples where InAs coverage is more than 1.48 ML. The QD density increases sharply with InAs deposition initially but slows down with increased coverage. Photoluminescence (PL) shows the existence of a third peak, other than QD and WL peaks, at the low energy side of the WL peak, which is named the precursor peak. Evidence is presented supporting the theory that this peak is due to 2D InAs islands on a monolayer of InAs, which are small enough to localize excitons. Meanwhile, the WL peak is due to larger InAs islands under high compressive strain. During QD formation, the WL peak energy increases with the increase in InAs deposition. This is due to the sudden transfer of material from the bigger size of InAs islands to the QD. Our results show that the QD, WL, and precursor peaks coexist near the onset of QD formation. The power dependence of the three PL peaks is evident, which supports to our conclusion.
关键词： precursor peak,InAs quantum dots,wetting layer,photoluminescence,GaAs substrate
更新于2025-09-19 17:13:59
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Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness
摘要： Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we can continually increase WL thickness with increasing GaAs deposition, even after the tensile-strained QDs (TSQDs) have begun to form. This anomalous SK behavior enables simultaneous tuning of both TSQD size and WL thickness. No such departure from the canonical SK growth regime has been reported previously. As such, we can now modify QD-WL interactions, with future benefits that include more precise control of TSQD band structure for infrared optoelectronics and quantum optics applications.
关键词： wetting layer,quantum dots,tensile strain,Stranski-Krastanov growth,optoelectronics
更新于2025-09-12 10:27:22