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[IEEE 2018 IEEE Industry Applications Society Annual Meeting (IAS) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Industry Applications Society Annual Meeting (IAS) - Design and Optimization of a Solar Power Conversion System for Space Applications
摘要： This manuscript details a design method for a 500kW solar power based microgrid system for space applications. The design method utilizes multi-objective optimization with the Genetic Algorithm considering four parameters that characterize solar power based microgrids (battery voltage, PV maximum power, PV maximum power point voltage, and number of panels per string). The final optimization metric is the ratio of daily average deliverable power to total system mass (W/kg) metric. The microgrid system is composed of a number of modular DC-DC micro-converters, of which four topologies (buck, boost, buck-boost and non-inverting buck-boost) are evaluated and compared. The non-inverting buck-boost converter is determined to be the best candidate, and the optimal system characteristics are provided and analyzed. The final system design achieves a specific power of 35.56W/kg, with optimized result of 743.7V battery voltage, 439.5W PV maximum power, 182.7V PV maximum voltage, and three panels per string. Based on the optimizations results, a prototype is designed, tested, and analyzed in terms of efficiency and low temperature reliability. The converter achieved a peak efficiency of 98.4%, a power density of 3.54W/cm3, a specific power of 3.76W/g, and operated for over 267 hours of 11-minute low temperature cycles from 0oC to -140oC.
关键词： wide band gap semiconductors,microgrids,non-inverting buck-boost,maximum power point trackers,space exploration,photovoltaic systems,design optimization,DC-DC power converters,system-level design,low temperature testing
更新于2025-09-23 15:23:52
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Design and Optimization of a Solar Power Conversion System for Space Applications
摘要： This manuscript details a design method for a 500kW solar power based microgrid system for space applications. The design method utilizes multi-objective optimization with the Genetic Algorithm considering four parameters that characterize solar power based microgrids (battery voltage, PV maximum power, PV maximum power point voltage, and number of panels per string). The final optimization metric is the ratio of daily average deliverable power to total system mass (W/kg) metric. The microgrid system is composed of a number of modular DC-DC micro-converters, of which four topologies (buck, boost, buck-boost and non-inverting buck-boost) are evaluated and compared. The non-inverting buck-boost converter is determined to be the best candidate, and the optimal system characteristics are provided and analyzed. The final system design achieves a specific power of 35.56W/kg, with optimized result of 743.7V battery voltage, 439.5W PV maximum power, 182.7V PV maximum voltage, and three panels per string. Based on the optimizations results, a prototype is designed, tested, and analyzed in terms of efficiency and low temperature reliability. The converter achieved a peak efficiency of 98.4%, a power density of 3.54W/cm3, a specific power of 3.76W/g, and operated for over 267 hours of 11-minute low temperature cycles from 0oC to -140oC.
关键词： low temperature testing,photovoltaic systems,wide band gap semiconductors,maximum power point trackers,design optimization,non-inverting buck-boost,space exploration,system-level design,DC-DC power converters,microgrids
更新于2025-09-23 15:22:29
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Efficiency Limits of Underwater Solar Cells
摘要： Operation of underwater vehicles and autonomous systems is currently limited by the lack of long-lasting power sources. These systems could potentially be powered using underwater solar cells, but the material requirements to achieve their full potential are not well understood. Using detailed-balance calculations, we show that underwater solar cells can exhibit efficiencies from ~55% in shallow waters to more than 65% in deep waters, while maintaining a power density >5 mW cm?2. We show that the optimum band gap of the solar cell shifts by ~0.6 eV between shallow and deep waters and plateaus at ~2.1 eV at intermediate depths, independent of geographical location. This wide range in optimum band-gap energies opens the potential for a library of wide-band-gap semiconductors to be used for high-efficiency underwater solar cells. Our results provide a roadmap for proper choice of underwater solar cell materials, given the conditions at points of use.
关键词： wide-band-gap semiconductors,detailed-balance calculations,efficiency limits,power density,underwater solar cells
更新于2025-09-23 15:19:57
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Degradation of GaN-on-GaN vertical diodes submitted to high current stress
摘要： GaN-on-GaN vertical devices are expected to ?nd wide application in power electronics, thanks to the high current densities, the low on-resistance and the high breakdown voltage. So far, only few papers on the reliability of GaN-on-GaN vertical devices have been published in the literature. This paper investigates the degradation of GaN-on-GaN pn diodes submitted to stress at high current density. The study was carried out by means of electrical characterization and electroluminescence (EL) measurements. We demonstrate that: (i) when submitted to stress at high current density, the devices show signi?cant changes in the electrical characteristics: an increase in on-resistance/turn-on voltage, an increase in the generation/recombination components, the creation of shunt-paths. (ii) the increase in on-resistance is strongly correlated to the decrease in the EL signal emitted by the diodes. (iii) the degradation kinetics have a square-root dependence on time, indicative of a di?usion process. The results are interpreted by considering that stress induces a di?usion of hydrogen from the highly-p-type doped surface towards the pn junction. This results in a decrease in hole concentration, due to the creation of MgeH bonds, and in a lower hole injection. As a consequence, on-resistance increases while EL signal shows a correlated decrease.
关键词： Wide band gap semiconductors,Bulk GaN substrates,Vertical diodes,pn junction,Di?usion,Gallium nitride,Hydrogen,Degradation
更新于2025-09-09 09:28:46
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Gallium Oxide || Synthesis, optical characterization, and environmental applications of β-Ga2O3 nanowires
摘要： In this chapter, we present the synthesis, optical characterization, and environmental applications of the β-Ga2O3 nanowires. The gap-state and near-band-edge transitions of β-Ga2O3 nanowires were identified and studied. The defects states play an important role in their optical emission and photocatalytic property. Owing to its various interesting properties such as wide bandgap, chemical and thermal stability, robust defect states, large surface to volume ratios, β-Ga2O3 nanowires are very promising in potential applications in optoelectronic, environmental applications, and fundamental research in the future.
关键词： wide-band-gap semiconductors,synthesis,optical characterization,photocatalytic activity,β-Ga2O3 nanowires,environmental applications
更新于2025-09-09 09:28:46
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An over 20-W/mm S-band InAlGaN/GaN HEMT with SiC/Diamond-Bonded Heat Spreader
摘要： This letter reports on an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm. A quaternary In-added InAlGaN barrier enabled both the large current of over 1 A/mm and high breakdown voltage of 257 V. The drain bias was increased as high as 100 V for the S-band load-pull measurement, leading to high power operation. Furthermore, the thermal resistance was reduced by 60%, from 18.8°C/W to 7.2°C/W, by employing the SiC/diamond heat spreader. This large heat dissipation effect was clearly observed in the output power density for the load-pull measurement. Our results demonstrate that the GaN HEMT with In-added barrier layer is promising not only for millimeter wave applications but also for high output power microwave amplifiers.
关键词： InAlGaN,HEMTs,Wide band gap semiconductors,GaN,Microwave transistors
更新于2025-09-09 09:28:46