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Threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes with high temperature stability
摘要： This letter reports the observation of threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes. This mechanism was ascribed to the conductive path formed by traps in the insulating layer at the regrowth interface after soft breakdown. The device can reliably switch more than 1000 cycles at both room temperature and 300 oC with small fluctuation on the set and reset voltage. The set voltage increased with the increasing temperature due to the enhanced thermal detrapping effect that made it harder to form conductive path at high temperatures. Besides, the device showed memory behaviors when the reset voltage was higher than 4.4 V. This work can serve as important references to further developing GaN-based memory devices and integrated circuits.
关键词： memory,breakdown,wide bandgap semiconductor,threshold switching,p-n diodes,Gallium nitride
更新于2025-09-23 15:22:29
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Heteroepitaxial growth of thick <i>α</i> -Ga <sub/>2</sub> O <sub/>3</sub> film on sapphire (0001) by MIST-CVD technique
摘要： The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire (0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-half-maximum (FWHM) of rocking curves for the (0006) and (10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm?2, respectively, indicative of high single crystallinity. The out-of-plane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively. The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors.
关键词： chemical vapor deposition,ultra-wide bandgap semiconductor,gallium oxide,epitaxy
更新于2025-09-23 15:22:29
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Room temperature spin injection into SiC via Schottky barrier
摘要： Electrical spin injection into and spin extraction from a wide-bandgap semiconductor SiC at room temperature were demonstrated via Schottky junctions. The spin relaxation time of SiC could reach 300 ps, overwhelming that of Si with similar carrier density due to the smaller atomic number. We also found that there existed two channels in SiC/CoFeB Schottky junctions for spin relaxation, one from bulk SiC and the other from interfacial defect states within the barrier whose spin relaxation times were about 1 ns. The bias condition controlled transport channels via bulk or defect states within the barrier and then affected the effective spin relaxation process. Realization of spin injection into SiC shed light on spintronics of wide-bandgap semiconductors such as spin-resolved blue light emitting diodes and high power/temperature spintronics.
关键词： spintronics,SiC,spin injection,Schottky barrier,wide-bandgap semiconductor
更新于2025-09-23 15:21:21
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Progress of power field effect transistor based on ultra-wide bandgap Ga <sub/>2</sub> O <sub/>3</sub> semiconductor material
摘要： As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.
关键词： ultra-wide bandgap semiconductor,field effect transistor (FET),power device,gallium oxide (Ga2O3)
更新于2025-09-19 17:15:36
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Gallium Oxide || Schottky contacts to β-Ga2O3
摘要： The success of β-Ga2O3 as the wide-bandgap semiconductor platform for ultrahigh efficiency electronic and optoelectronic devices relies on the ability to control the properties of ohmic and rectifying, or Schottky, contacts on this material. This chapter focuses on the current status of research and development of Schottky contacts on β-Ga2O3: the materials and structures used and their corresponding electrical properties.
关键词： Schottky contacts,β-Ga2O3,electronic devices,optoelectronic devices,wide-bandgap semiconductor
更新于2025-09-10 09:29:36
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Gallium Oxide || Low-field and high-field transport in β-Ga2O3
摘要： β-Ga2O3 has recently emerged as a novel wide-bandgap semiconductor with immense potential for applications in power electronics and optoelectronics. Experimental advancements in the past 5 years have been significant toward realizing commercial β-Ga2O3 devices in the near future [1–7]. Matured crystal growth and processing techniques make the material further promising [8–10]. In terms of power electronic applications, MOSFETs based on this material have been demonstrated that could withstand record high voltages [11, 12]. The accuracy of n-type doping and the difficulty of p-type doping make electrons the primary charge carriers in β-Ga2O3. Although β-Ga2O3 has lower electron mobility compared to other wide-bandgap semiconductors, it is found to have a superior Baliga’s figure of merit that jointly accounts for on-state resistance and breakdown voltage [4]. So it is important to investigate in rigor the fundamentals behind β-Ga2O3 material properties that could be beneficial to gain an understanding on the causes that control mobility and breakdown voltage. There are theoretical reports on fundamental materials aspects including electronic structure [13] and optical properties [14], lattice dynamical and dielectric properties [15], and thermal properties [16, 17] as well. The primary physics behind both mobility (and hence the device on resistance) and breakdown voltage lies in the electron transport phenomenon. There have been a few experimental reports that try to characterize the electron transport and scattering mechanisms in β-Ga2O3 with Hall measurements being reported a few times to predict temperature dependence and also crystal orientation dependence of the electron mobility [18, 19]. On the other hand, we are making a systemic study on the theoretical understanding of electron transport in β-Ga2O3 starting from the first principles [20–22]. The main idea is to follow a bottom-up approach in order to develop an understanding of the near-equilibrium and far-from-equilibrium electron dynamics in β-Ga2O3. This is unique compared to conventional semiconductors in a way that β-Ga2O3 has a low-symmetry crystal structure and a fairly large primitive unit cell that gives rise to many phonon modes. On several occasions, the traditional notions of electron transport that are applicable to Si and GaAs actually do not quite hold well in the case of β-Ga2O3. In this chapter, we attempt to provide a comprehensive picture of electron transport in β-Ga2O3 under low and moderately high electric fields based on our work in the recent years.
关键词： electron-phonon interaction,β-Ga2O3,electron mobility,power electronics,optoelectronics,electron transport,velocity-field curves,wide-bandgap semiconductor
更新于2025-09-09 09:28:46