Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering pressure dependency

摘要： We found that the write-once-read-many-times (WORM, inerasable)-to-rewritable (erasable) transition phenomenon results from the different structure of the filament, which is determined by the grain orientations of the deposited films. The conduction mechanism of this switching transition, and its impact on the synaptic behavior in various ZnO nanostructure, is also discussed. Furthermore, our WORM devices have programmable physical damage function that can be exploited for use in security systems against data theft, hacking, and unauthorized use of software/hardware. This work proposes ZnO-based non-volatile memory for invisible electronic applications and gives valuable insight into the design of WORM and rewritable memories.