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Phase transformation and photoluminescence of undoped and Eu3+-doped zinc stannate (Zn2SnO4) nanocrystals synthesized by hydrothermal method
摘要： In this work we report a hydrothermal approach for synthesis of zinc stannate (Zn2SnO4–ZTO) nanocrystals. Structural properties and morphology of the samples were investigated in detail. In particular, our research focused on the effect of hydrothermal duration on the phase composition of ZTO nanocrystals. By combining X-ray diffraction analysis, scanning electron microscopy and selected area energy-dispersive X-ray spectroscopy, a crystalline phase transformation during the hydrothermal process was enlightened. The ZTO nanocrystals were doped with europium ions. The room-temperature emission spectra of the undoped ZTO and Eu3+-doped ZTO nanocrystals were recorded. The emission spectra of the undoped ZTO nanocrystals showed two broad bands related to the lattice defects, while the spectra of Eu3+-doped ZTO nanocrystals exhibited the narrow emission peaks, which were assigned to the radiative intra-configurational f–f transitions of Eu3+ ions.
关键词： nanocrystals,europium doping,hydrothermal method,photoluminescence,zinc stannate
更新于2025-09-23 15:21:21
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Al-doped zinc stannate films for photovoltaic applications
摘要： Al-doped zinc stannate (Zn2SnO4 : Al or Zn-Sn-O : Al or AZTO) has attracted considerable attention as a next-generation transparent conducting oxide (TCO) owing to its properties. In this study, AZTO films were deposited by co-sputtering Al-doped zinc oxide (AZO) and SnO2 targets at room temperature. The as-deposited AZTO films were confirmed to be satisfactorily adherent with good uniformity. These films had an average transmittance of over 80%, energy band gap of >3.5 eV, and relatively low electrical resistivity of 1.29×10?1 Ω cm. The composition ratio of Zn/Sn at 140 W of SnO2 power was approximately 2, indicating the formation of AZTO film with stoichiometric composition of Zn2SnO4 : Al at this power. Further, the Cu(InGa)Se2 (CIGS) device fabricated with AZTO (140 W) as a TCO exhibited an efficiency of 0.73%, with a VOC of 0.51 V, JSC of 3.76 mA/cm2, and FF of 38.4%. Furthermore, the conversion efficiency of CIGS cell was enhanced to 2.82% by employing the AZTO film deposited at the elevated temperature of 350 oC.
关键词： Al-doped Zinc Stannate,Thin Films,Cu(InGa)Se2,Transparent Conducting Oxides
更新于2025-09-23 15:19:57