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oe1(光电查) - 科学论文

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出版时间
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
研究主题
  • graphene
  • perovskite solar cells
  • quantum dots
  • Photocatalysis
  • photoluminescence
  • photocatalysis
  • Raman spectroscopy
  • optical properties
  • TiO2
  • stability
应用领域
  • Optoelectronic Information Science and Engineering
  • Materials Science and Engineering
  • Physics
  • Optoelectronic Information Materials and Devices
  • Nanomaterials and Technology
  • Electrical Engineering and Automation
  • Electronic Science and Technology
  • Chemistry
  • Polymer Materials and Engineering
  • Precision Instruments
机构单位
  • Chinese Academy of Sciences
  • Huazhong University of Science and Technology
  • Jilin University
  • University of Electronic Science and Technology of China
  • Zhejiang University
  • Tsinghua University
  • University of Chinese Academy of Sciences
  • University of Science and Technology of China
  • Peking University
  • Shanghai Jiao Tong University
63348 条数据
?? 中文（中国） ▾

  • Case histories of intense pulsed light phototherapy in dermatology - the HPPL? and IFL? technologies

    摘要： The intense pulsed light (IPL) and laser technologies are widely used for skin rejuvenation and for treating several dermatological disorders such as skin dyschromia and acne, and for non-ablative dermal remodeling of rhytides and hypertrophic scars. Technological evolution is rapid. The High Power Pulsed Light? [HPPL?] and Incoherent Fast Light? [IFL?, Novavision Group S.p.A., 20826 Misinto (MB), Italy] are recent innovations in the field of IPL technologies; IFL? is a further evolution of the already advanced HPPL? system. The paper presents a selection of case histories of dermatological lesions treated with the HPPL? and IFL? technologies. All study materials were appropriately peer-reviewed for ethical problems.

    关键词： dermal remodeling,intense pulsed light,photoaging,Photorejuvenation

    更新于2025-09-04 15:30:14

  • Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa <sub/>2</sub> O <sub/>4</sub> single crystals

    摘要： Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 ?C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are characterized by a stoichiometric or near-stoichiometric composition with a normal spinel structure at room temperature and by a narrow full width at half maximum of the rocking curve of the 400 peak of (100)-oriented samples of 23 arcsec. ZnGa2O4 is a single crystalline spinel phase with the Ga/Zn atomic ratio up to about 2.17. Melt-grown ZnGa2O4 single crystals are thermally stable up to 1100 and 700 ?C when subjected to annealing for 10 h in oxidizing and reducing atmospheres, respectively. The obtained ZnGa2O4 single crystals were either electrical insulators or n-type semiconductors/degenerate semiconductors depending on growth conditions and starting material composition. The as-grown semiconducting crystals had the resistivity, free electron concentration, and maximum Hall mobility of 0.002–0.1 ?cm, 3 × 1018–9 × 1019 cm?3, and 107 cm2 V?1 s?1, respectively. The semiconducting crystals could be switched into the electrically insulating state by annealing in the presence of oxygen at temperatures ≥700 ?C for at least several hours. The optical absorption edge is steep and originates at 275 nm, followed by full transparency in the visible and near infrared spectral regions. The optical bandgap gathered from the absorption coef?cient is direct with a value of about 4.6 eV, close to that of β-Ga2O3. Additionally, with a lattice constant of a = 8.3336 ?, ZnGa2O4 may serve as a good lattice-matched substrate for magnetic Fe-based spinel ?lms.

    关键词： high mobility,melt growth,high quality,ultra-wide bandgap,conductive,single crystals,ZnGa2O4

    更新于2025-09-04 15:30:14

  • Effects of UV-C radiation on common dandelion and purple coneflower: First results

    摘要： Ultraviolet-C (UV-C) light (100 ≤ λ ≤ 280 nm) is a ionizing radiation that can damage living organisms. An experiment was conducted on plants of common dandelion (Taraxacum officinale Weber, T. Densleonis Desf.) and purple coneflower [Echinacea purpurea, (L.) Moench] irradiated with UV-C at different exposition times, under controlled conditions and grown in self-produced characterized compost, to assess the effect of different doses UV-C radiation on some physiological parameters. Trials have been carried out using a black chamber equipped with an UV-C lamp in which plants were divided in four groups on the basis of UV-C irradiation period (10, 30, 60, and 120 min). Non-irradiated plants were kept as controls. Plant photosynthetic performance, chlorophyll content (SPAD) and some morphologic traits were recorded before, immediately after irradiations and 20 days weeks later. The effects on photosynthetic performances and chlorophyll contents (SPAD) were evaluated and compared with data obtained in similar experiments where tomato plants were irradiated at different times with UV-C light. In both species, SPAD values decreased as the irradiation period became longer. The two species showed different gas exchange dynamics, depending on the UV-C exposure time. Two months after the UV-C irradiation, plant dry weight measured at 120-min UV-C exposure was significantly lower than the control.

    关键词： photosynthesis,dry matter,gas exchange,chlorophyll content,ozone layer.

    更新于2025-09-04 15:30:14

  • In <sub/>0.49</sub> Ga <sub/>0.51</sub> P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

    摘要： We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor deposition (MOCVD). With the assistance of numerical simulation, we were able to achieve high performance GaAs HBTs with DC current gain of ～100 through optimizing the base doping concentration (C-doped, ～ 1.9×1019/cm3), base layer thickness (～55 nm), and the sub-collector doping concentration (Te-doped, > 5×1018/cm3). The breakdown voltage at base (BV ceo) of higher than 9.43 V was realized with variation of < 3% across the 200 mm wafer. These results could enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si-CMOS transistors on a common Si platform.

    关键词： InGaP/GaAs heterojunction bipolar transistors,base doping concentrations,base thickness,Si substrates,HBTs,sub-collector doping concentrations

    更新于2025-09-04 15:30:14

  • Effectiveness of Glaucoma Diagnostic Parameters from Spectral Domain-Optical Coherence Tomography of Myopic Patients

    摘要： 目的：目前频域光学相干成像（SD?OCT）可作为青光眼诊断的新工具。因此本文评价了SD?OCT所提供的青光眼诊断参数在不同屈光度近视患者中的诊断能力。 方法：横断面研究。共有248例受试者（248眼）入选。包括早期开角型青光眼组51，正常人组79例（±0.50D之内），低度近视组47例（?0.50 D to ?3.00 D（不包括）），中度近视组43例（?3.00 D to ?6.00 D（不包括）），高度近视组28例（≤?6.00 D）。所有受试者均行眼科常规检查及Humphrey 视野计、SD?OCT检查，将OCT检查所获得的视网膜神经纤维层(RNFL)和节细胞复合体（GCC））的相关参数进行统计学分析，分别绘制受试者操作曲线（ROC）并计算曲线下面积（AUC）。 结果：AUC结果如下：正常人、低度近视眼组的AUC最佳参数均为下方、颞下方RNFL厚度（AUC均﹥0.94），而中度近视、高度近视组的最佳参数均为颞下方参数（AUC分别为0.926，0.896），而中度近视组下方参数的AUC较?。?.864）排在所有RNFL参数的第15位。对文献中公认的诊断青光眼能力强的参数（下方、颞下方、颞上方）进行进一步分析，当灵敏度为85%时，这些参数在正视眼、低度近视眼组的特异度较高，均大于80%，而在中度近视、高度近视组特异度均较低，约在20%～60%。根据机器数据库所得绿色部分在高度近视组也较其他组少（P < 0.05）。 结论：SD?OCT的青光眼诊断参数在应用于中高度近视眼时的诊断能力较弱，特异度明显偏低，对中高度近视者进行青光眼的诊断时需综合分析。同时建议SD?OCT的正常人数据库应针对不同屈光度进行补充完善。

    关键词： Glaucoma,Retina,Myopia,Nerve Fibers,Open Angle

    更新于2025-09-04 15:30:14

  • New Analytical Formulae to Calibrate Well-type Scintillation Detectors Efficiency

    摘要： Direct Mathematical calculations for the absolute efficiency of well-type gamma ray scintillation crystals are described. Calculated detection efficiencies are drawn for two commonly used well crystals. Comparisons are made between present works and published Monte Carlo values. The present approach proved quite success in predicting the efficiency of well type detectors providing only the geometry and materials of the system formed of source, detector and shielding as well as the energy of the emitted photons.

    关键词： Absolute efficiency,Well-type detector,Gamma-spectroscopy,New mathematical method

    更新于2025-09-04 15:30:14

  • Stabilization of ferroelectric Hf <sub/>x</sub> Zr <sub/>1?x</sub> O <sub/>2</sub> films using a millisecond flash lamp annealing technique

    摘要： We report on the stabilization of ferroelectric HfxZr1?xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 ?C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 ?C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (Pr) of ～21 μC/cm2 and a coercive field (Ec) of ～1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films.

    关键词： low thermal budget,ferroelectric HfxZr1?xO2 films,remanent polarization,ferroelectric phase,millisecond flash lamp annealing,coercive field

    更新于2025-09-04 15:30:14

  • The Double Slit Experiment-Explained

    摘要： The wavelet envisioned by Huygen’s in diffraction phenomenon is re-interpreted as being polarized after passing through slit/hole which removed the electric field component from the Electromagnetic Radiation (EM-R), the remained wave consist of the Circular Magnetic Field (CMF), this CMF lost the speed of light and the electric field, hence it’s a short distance travel field, originated from the CMF produced by accelerated electrons, integrated with the Electric Field (EF) during the Flip-Flop (F-F) mechanism producing EM-R; hence the passing of light through a single hole/slit resulted in a CMF which reproduced as rings on the monitor screen in single wave diffraction, while the interference of two such CMF in double slits experiment, produced constructive or destructive interference forming patches on the monitor screen; and the perceived electron diffraction is an enter of two CMF from a single electron into a slit then emerged to produce constructive or destructive interference, in addition to the electron which entered and emerged from the slit with the stronger CMF, the paper finally derived the origin of Planck ‘constant (h) for the second time; the logical interpretation of double slits diffraction will restore the common sense in the physical world, distorted by the pilot wave.

    关键词： Electron diffraction,wavelet,Circular magnetic field,Double slit experiment,Polarization,Origin of Planck’ constant

    更新于2025-09-04 15:30:14