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[IEEE 2018 International Wafer Level Packaging Conference (IWLPC) - San Jose, CA, USA (2018.10.23-2018.10.25)] 2018 International Wafer Level Packaging Conference (IWLPC) - Development of Low Temperature Direct Bond Interconnect Technology for Die-To-Wafer and Die-To-Die Applications-Stacking, Yield Improvement, Reliability Assessment
摘要： The Direct Bond Interconnect technology (DBI), commonly referred to as low temperature hybrid bonding, is an attractive bonding technology with the potential of much finer pitch and higher throughput than any solder based microbump bonding. Dielectric bonding takes place at ambient temperatures while the metal interconnection (usually Cu to Cu) forms at low annealing temperatures ranging from 150oC to 300oC. A 6μm pitch process is currently in high volume production for wafer-to-wafer (W2W) hybrid bonding. Die-to-wafer (D2W) and die-to-die (D2D) assembly has been in development at Xperi. The unique challenges include producing shallow, uniform and well controlled Cu recess on Cu bond pads of 5 um or greater, which is substantially larger than what is normally used in W2W bonding and particle minimization on die surface prior to bonding. Xperi-designed daisy chain dies and wafers consist of chains ranging from 2 to 31356 interconnects. Die size is 7.96 mm by 11.96 mm, which is similar to a typical high bandwidth memory (HBM) die. The bonding studies include 10μm and 15μm diameter bond pads on 40μm pitch and 5μm diameter bond pads on 10μm pitch. The die thickness is either 50 μm or 200 μm. In this paper, we present the latest development of our chemical mechanical polish (CMP) technology to produce uniform shallow Cu recess on 15um circular bond pads. The large pad size allows for a relaxed alignment requirement to manufacturing high throughput flip chip bonders available today. Additionally, high volume production ready process for bonding and D2W multi-layer stacking are explored as well as bonding yield and reliability improvement results.
关键词： 2.5D,D2D,Cu-to-Cu bonding,DBI?,die stacking,D2W,3D,hybrid bonding
更新于2025-09-04 15:30:14
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Tuning the Crystal Packing and Semiconductor Electronic Properties of 7,7’-Diazaisoindigo by Side-Chain Length and Halogenation
摘要： In the last years, the 7,7’-diazaisoindigo has emerged as a promising building block for semiconductor materials. In this work, we have studied different electronic properties which can be related to the semiconducting character of a family of 7,7’-diazaisoindigo derivatives. Concretely, we have analyzed the role of halogen substituents and different-length side chains on these properties calculated by means of the Density Functional Theory. In total, sixteen halogenated and non-halogenated diazaisoindigo derivatives were investigated. Four of these compounds were also synthetized and their X-ray structures were employed as starting points for the calculation of crystal structure of the rest of the novel compounds. In general, high electron transfer rate constants and electron mobilites were calculated for the studied 7,7’-diazaisoindigo derivatives, especially for bromine derivatives and compounds with long-side chains. The origin of these high rate constants mainly resides in the strong electronic couplings found for diazaisoindigo crystals in the π-stacking direction.
关键词： 7,7’-diazaisoindigo,side chains,electron mobilities,halogen substituents,Density Functional Theory,semiconductor materials,electron transfer rate constants,π-stacking direction
更新于2025-09-04 15:30:14
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Nitrogen passivation formation on Cu surface by Ar–N2 plasma for Cu-to-Cu wafer stacking application
摘要： Wafer stacking technology provides reduced interconnect delay, improved bandwidth, reduced form factor, and decreased cost. Solder-based metallic die bonding is presently utilized in high-volume manufacturing, but Cu-based metallic wafer bonding is quickly becoming a key bonding technique for next generation 3D IC and heterogeneous stacking applications. In this study, Ar–N2 plasma treatment on Cu surface was investigated to passivate Cu surface with nitrogen and to enhance the bonding quality of Cu-to-Cu wafer bonding. The Ar–N2 plasma treatment was performed by conventional DC sputtering under 5 mTorr working pressure with different Ar–N2 partial pressures. Then, the effect of Ar–N2 plasma treatment on Cu surface was evaluated structurally and electrically. It was observed that the Ar–N2 plasma treatment with high nitrogen partial pressure over a sufficient plasma treatment time provided activated Cu surface, reduction of copper oxide and chemisorbed nitrogen, and copper nitride passivation. The Ar–N2 plasma treatment of Cu surface was found to be a potential pretreatment method for Cu-to-Cu bonding.
关键词： Nitrogen passivation,3D IC,Wafer stacking,Cu-to-Cu bonding,Ar–N2 plasma treatment
更新于2025-09-04 15:30:14
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Alkyl chain-dependent cyano-stilbene derivative's molecular stacking, emission enhancement and fluorescent response to the mechanical force and thermal stimulus
摘要： Two cyano-stilbene derivatives with butyl (C4MPA) and octyl groups (C8MPA) were synthesized to investigate the effects of alkyl chains on molecular stacking, emission enhancement, and mechanofluorochromism. The two compounds displayed weak emissions in monomolecular state and emitted an enhanced fluorescence in crystal state. However, the fluorescence quantum yield of C4MPA (19%) was lower than that of C8MPA (76%). Face-to-face dimer stacking was found only in the C4MPA crystal, in which molecules adopted a nonplanar configuration. The C8MPA crystal presented two kinds of antiparallel 1D arrangement. One involved the antiparallel stacking of nonplanar aromatic moieties. The other consisted of coplanar molecules without π-π stacking, which were responsible for the higher luminescence yield. Moreover, the emission of the C4MPA solid was quenched under mechanical force, whereas the C8MPA solid still emitted a strong fluorescence after grinding. C8MPA lost fluorescence when heated at above 60 °C because of its low melting point, and the supercooling viscous liquid without fluorescence was observed even the sample was cooled to room temperature for 10 h, meaning a very slowly crystallization process. Such non-emissive supercooling viscous liquid might rapidly transform into strongly emissive solid under the mechanical force shearing stimulus. Thus, C8MPA films could be used as sensors for mechanical force and thermal stimuli.
关键词： mechanofluorochromism,emission enhancement,molecular stacking,thermal stimulus,cyano-stilbene derivatives,alkyl chains
更新于2025-09-04 15:30:14
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A micro-scale plasma spectrometer for space and plasma edge applications (invited)
摘要： A plasma spectrometer design based on advances in lithography and microchip stacking technologies is described. A series of curved plate energy analyzers, with an integrated collimator, is etched into a silicon wafer. Tests of spectrometer elements, the energy analyzer and collimator, were performed with a 5 keV electron beam. The measured collimator transmission and energy selectivity were in good agreement with design targets. A single wafer element could be used as a plasma processing or fusion first wall diagnostic.
关键词： electron beam,microchip stacking,silicon wafer,plasma processing,fusion first wall diagnostic,lithography,plasma spectrometer,collimator,energy analyzer
更新于2025-09-04 15:30:14