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reveals remarkable optical linewidths and fine structure for well-known damage centers
摘要： Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much sharper in enriched 28Si than in natural Si, due to the elimination of inhomogeneous isotopic broadening, this has not yet been investigated for radiation damage centers. We report results for the well-known G, W, and C damage centers in highly enriched 28Si, with optical linewidth improvements in some cases of over two orders of magnitude, revealing previously hidden ?ne structure in the G-center emission and absorption. These results have direct implications for the linewidths to be expected from single-center emission, even in natural Si, and for models for the G-center structure. The advantages of 28Si can be readily extended to the study of other radiation damage centers in Si.
关键词： 28Si,silicon,fine structure,optical linewidths,radiation damage centers
更新于2025-09-23 15:21:01
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Mg-pair isoelectronic bound exciton identified by its isotopic fingerprint in
摘要： We use the greatly improved optical linewidths provided by highly enriched 28Si to study a photoluminescence line near 1017 meV previously observed in the luminescence spectrum of natural Si diffused with Mg and suggested to result from the recombination of an isoelectronic bound exciton localized at a Mg-pair center. In 28Si, this no-phonon line is found to consist of ?ve components whose relative intensities closely match the relative abundances of Mg pairs formed by random combinations of the three stable isotopes of Mg, thus con?rming the Mg-pair hypothesis. We further present the results of temperature-dependence studies of this center that reveal unusual and as-yet unexplained behavior.
关键词： isotopic fingerprint,28Si,isoelectronic bound exciton,Mg-pair,photoluminescence
更新于2025-09-09 09:28:46