研究目的
Investigating the optical linewidths and fine structure of radiation damage centers in highly enriched 28Si compared to natural Si.
研究成果
The study demonstrates significant improvements in optical linewidths for radiation damage centers in highly enriched 28Si, revealing previously hidden fine structure. These findings have implications for the use of individual centers as single-photon emitters and for models of the G-center structure.
研究不足
The study is limited to the G, W, and C damage centers in silicon. The high purity and isotopic enrichment of the samples may not be easily replicable for all research settings.
1：Experimental Design and Method Selection:
The study utilized high-purity Si enriched to
2：995% 28Si, irradiated with 10-MeV electrons, and annealed at various temperatures to produce strong photoluminescence (PL). Sample Selection and Data Sources:
Samples were cut from the Avogadro crystal, enriched to
3：995% 28Si, and control samples from high-purity undoped floating-zone-grown natSi. List of Experimental Equipment and Materials:
Bruker IFS 125 HR Fourier transform infrared (FTIR) spectrometer, CaF2 beam splitter, liquid nitrogen cooled Ge detector for PL, room-temperature InGaAs detector for absorption, DFB semiconductor diode lasers, high-resolution wavemeter.
4：Experimental Procedures and Operational Workflow:
Samples were etched, held in a strain-free manner immersed in liquid He, and PL and absorption spectra were collected.
5：Data Analysis Methods:
The linewidths and energies of the observed NP components were analyzed using high-resolution spectroscopy techniques.
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