- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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[IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Generating and Steering of Quasi-nondiffraction Beam by Substrate Integrated Waveguide Slot Array Antenna
摘要： This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.
关键词： MOSFET,SOI,semiconductor devices,compact modeling,ionizing radiation,Aging effects
更新于2025-09-23 15:19:57
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Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications
摘要： This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.
关键词： compact modeling,SOI,ionizing radiation,semiconductor devices,MOSFET,Aging effects
更新于2025-09-23 15:19:57
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[IEEE 2020 10th Annual Computing and Communication Workshop and Conference (CCWC) - Las Vegas, NV, USA (2020.1.6-2020.1.8)] 2020 10th Annual Computing and Communication Workshop and Conference (CCWC) - DFB Laser Chip Defect Detection Based on Successive Subspace Learning
摘要： This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.
关键词： MOSFET,SOI,semiconductor devices,compact modeling,ionizing radiation,Aging effects
更新于2025-09-23 15:19:57
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Towards a Suburban Quantum Network Link
摘要： This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.
关键词： compact modeling,SOI,ionizing radiation,semiconductor devices,MOSFET,Aging effects
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - UV exposure: a novel processing method to fabricate nanowire solar cells
摘要： This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.
关键词： MOSFET,SOI,semiconductor devices,compact modeling,ionizing radiation,Aging effects
更新于2025-09-19 17:13:59