研究目的
To present a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs).
研究成果
The presented physics-based compact modeling approach accurately describes the impact of total ionizing dose (TID) and stress-induced defects on MOS devices and ICs. It is compatible with modern MOSFET compact modeling techniques and has been verified through TCAD simulations and experimental data.
研究不足
The modeling approach is limited to MOS devices and ICs, and its accuracy depends on the correctness of the defect densities and the surface potential calculations.
1：Experimental Design and Method Selection:
The approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps.
2：Sample Selection and Data Sources:
The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS devices.
3：List of Experimental Equipment and Materials:
TCAD simulations and experimental I-V characteristics from irradiated devices are used for verification.
4：Experimental Procedures and Operational Workflow:
The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices.
5：Data Analysis Methods:
The impact of radiation and stress-induced defects on the I-V characteristics of MOSFETs is analyzed.
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