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Ellipsometric study on optical properties of hydrogen plasma-treated aluminum-doped ZnO thin film
摘要： Aluminum-doped zinc oxide (AZO) thin films were prepared by radio frequency (RF) sputtering at room temperature, and then post-treated by hydrogen (H2) plasma at different durations. After H2 plasma treatment under the condition of 10 W, 200 °C and 3.0 Hours, the resistivity showed a dramatically decrease from 1.6 Ω cm to 3.4 × 10?3 Ω cm, while the transmittance at the wavelength of 550 nm was improved from 90.5% to 96.0%. The optical constants of H2 plasma-treated AZO thin films were detailed characterized by a varied angle spectroscopic ellipsometer. The results show that the refractive index n decreases in the entire measured wavelength range of 350–1100 nm, while the extinction coefficient k decreases in the short wavelength range and changes negligibly at the long wavelength range. These results can provide guidelines for the design and optimization of AZO thin film-based optoelectronic applications.
关键词： Resistivity,Spectroscopic ellipsometer,Transmittance,Optical constants,Hydrogen plasma treatment,Aluminum-doped zinc oxide
更新于2025-11-14 17:03:37
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Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors
摘要： The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annealing method is proposed to remove organic molecules from the channel layer and to improve the properties of the patterned films. The different interfaces between the insulation layers, channel layers, and drain/source electrodes were processed by argon plasma. This was done to improve the printing accuracy of the patterned InGaZnO channel layers, drain, and source electrodes, as well as to optimize the printing thickness of channel layers, reduce the defect density, and, ultimately, enhance the electrical performance of printed TFT devices.
关键词： thin-film transistor,annealing,plasma treatment,ink-jet printing
更新于2025-10-24 16:37:46
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Wafer-scale Fabrication of Nitrogen-doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection
摘要： We demonstrated a simple and scalable fabrication route of nitrogen-doped reduced graphene oxide (N-rGO) photodetector on 8-inch wafer-scale. The N-rGO was prepared through in-situ plasma-treatment in an acetylene-ammonia atmosphere to achieve n-type semiconductor with substantial formation of quaternary-N substituted into the graphene lattice. The morphology, structural, chemical composition and electrical properties of the N-rGO was carefully characterized and being used for the device fabrication. The N-rGO devices were fabricated in a simple metal-semiconductor-metal (MSM) structure with unconventional metal-on-bottom configuration to promote high-performance photodetection. The N-rGO devices exhibited enhanced photoresponsivity as high as 0.68 A W?1 at 1.0 V, which is about two orders of magnitude higher compared to a pristine graphene and wide-band photo-induced response from visible to near-infrared (NIR) region with increasing sensitivity in the order of 785 nm, 632.8 nm and 473 nm excitation wavelengths. We also further demonstrated a symmetric characteristic of photo-induced response to any position of local laser excitation with respect to the electrodes. The excellent features of wafer-scale N-rGO devices suggest a promising route to merge the current silicon technology and two-dimensional materials for future optoelectronic devices.
关键词： photodetector,plasma treatment,quaternary-N,wafer-scale fabrication,Nitrogen-doped reduced graphene oxide
更新于2025-09-23 15:23:52
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Low-damage nitrogen incorporation in graphene films by nitrogen plasma treatment: Effect of airborne contaminants
摘要： Graphene films grown on copper by chemical vapor deposition were exposed to the late afterglow of a reduced-pressure N2 plasma sustained by microwave electromagnetic fields. X-ray photoelectron and Raman spectroscopies reveal extremely high incorporation of plasma-generated N atoms into the graphene film (N/C = 29%) while maintaining an unprecedentedly low-damage generation (D:G = 0.35-0.45) compared to the literature (0.5 to 2.5). The incorporation dynamics between graphene on copper and graphene on copper oxide are also compared and discussed. After transfer on SiO2/Si substrate, the N/C content decrease to only 6%. This reveals that a large part of the N atoms are weakly bonded to the graphene surface. Most of the nitrogen incorporation seems linked to the functionalization of weakly bonded hydrocarbons initially adsorbed from air exposure or carbon-nitrogen structures arising from plasma-surface interactions.
关键词： X-Ray photoelectron spectroscopy,Raman spectroscopy,graphene,downstream plasma treatment,N-incorporation
更新于2025-09-23 15:23:52
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Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature
摘要： Heteroepitaxy with large thermal and lattice mismatch between the semiconductor and substrate is a critical issue for high-quality epitaxial growth. Typically, high growth temperatures (>1000 °C) are required to achieve high-quality GaN epilayers by conventional metal?organic chemical vapor deposition. In this study, the high-quality GaN heteroepitaxy is realized by atomic layer annealing and epitaxy (ALAE) at a low growth temperature of 300 °C. The layer-by-layer, in situ He/Ar plasma treatment at a low plasma power was introduced in each cycle of atomic layer deposition to contribute the e?ective annealing e?ect for signi?cant enhancement of the GaN crystal quality. The Penning e?ect is responsible for signi?cant improvement of the GaN crystal quality due to the incorporation of He into the Ar plasma. The high-resolution transmission electron microscopy, nano-beam electron di?raction, and atomic force microscopy reveal a high-quality nanoscale single-crystal GaN heteroepitaxy and a very smooth surface. The full width at half-maximum of the X-ray rocking curve of the GaN epilayer is as low as 168 arcsec. The low-temperature ALAE technique is highly bene?cial to grow high-quality nanoscale GaN epilayers for sustainable, energy-saving, and energy-e?cient devices including high-performance solid-state lighting, solar cells, and high-power electronics.
关键词： Atomic layer annealing,Atomic layer deposition,Gallium nitride,Atomic layer epitaxy,Plasma treatment
更新于2025-09-23 15:23:52
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Effect of plasma treatment on adhesion strength and moisture absorption characteristics between epoxy molding compound/silicon chip (EMC/chip) interface
摘要： Reliability of interface between two dissimilar materials becomes an important issue due to increasing demands of high-density integrated circuits. Most of failures of semiconductor package occur at the interface between two dissimilar materials in high temperature reflow process, thus, adhesion strength under high temperature should be investigated. In this study, an adhesion shear test jig was newly devised to measure the adhesion strength of epoxy molding compound/Si chip (EMC/chip) interface at high temperature (200 °C). In order to investigate the effect of plasma treatment on adhesion strength and moisture absorption characteristics, the number of plasma treatments was varied. Also, moisture absorption time was varied to observe the moisture uptake and degradation of adhesion strength with respect to plasma treatment number. Atomic force microscope (AFM) was analyzed to verify the surface roughness of silicon chip, and scanning electron microscopy (SEM) was used to observe cross-sectional fractured morphology after adhesion strength test. From this study, it was found that the plasma treatments affect much the adhesion strength and moisture uptake at the interface between the EMC/Chip interface.
关键词： Semiconductor package,Moisture absorption,Adhesion strength,Plasma treatment
更新于2025-09-23 15:23:52
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Influence of porosity and pore size on sputtering of nanoporous structures by low-energy Ar ions: Molecular dynamics study
摘要： In this paper we have carried out molecular dynamics simulation of the low-energy Ar ion irradiation of nanoporous homogeneous material with different porosity and pore sizes. Our results demonstrate that in a model with small pores (Rpore = 0.8 nm) and relatively low (22%) porosity, the pores at near-surface layers collapsed due to the ion bombardment, whereas in a model with larger pores (Rpore = 2.8 nm) and higher (44%) porosity no significant structural changes occurred under the same irradiation conditions. To study thermal stability of porous structures and to reveal the effects of both the pore radius and the porosity on pore collapsing, our nanoporous structures were subjected to gradual heating. The simulation results demonstrate distinct mechanisms of structural changes in the nanoporous materials depending on the value of the excess surface energy per unit volume.
关键词： low-k dielectrics,plasma treatment,nanoporous material,pore collapse,sputtering
更新于2025-09-23 15:23:52
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Photosensitized TiO2 films on polymers – Titania-polymer interactions and visible light induced photoactivity
摘要： Photocatalytic coatings at polymers, showing a visible light induced photoactivity, can be synthesized using a low temperature oxygen plasma treatment of the polymer (PP) followed by deposition of TiO2 nanoparticles and their sensitization with organic ligands. The whole process consists of three major steps: surface activation involving its partial oxidation, immobilization of TiO2 nanoparticles and photosensitization of titania film by impregnation with the solution of organic ligands forming surface Ti(IV) charge transfer complexes. XPS and IR analysis revealed the formation of oxygen-containing groups at the polymer surface upon plasma treatment. These groups participate in the formation of Ti-O-C bonds which ensure a very good adhesion of titania films to polymeric surface. The dip-coating process using an aqueous colloidal solution of TiO2 nanoparticles allows to synthesize a compact coating with a thickness of 100-300 nm. Coordination of catechol-like ligands to surface Ti(IV) centers results in formation of colored charge transfer complexes responsible for absorption of visible light and an effective photoinduced charge separation. Photogenerated electrons and holes can take part in surface redox reactions responsible for degradation of pollutants. Tests with various organic ligands (catechol, 2,3-naphthalenediol, pyrogallol and rutin) revealed, that the titanium dioxide coating modified with catechol was the most photoactive one when visible light irradiation was applied. Presented photocatalytic coatings can be effectively used as self-sterilizing surfaces activated by visible light.
关键词： photocatalysis,XPS analysis,TiO2 coatings,photosensitization,plasma treatment
更新于2025-09-23 15:23:52
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Analysis and correction of probe location errors in spherical near-field antenna measurement
摘要： Cellulose is the most abundant natural polymer on earth. With the increasing shortage of oil resources, people have been focusing more on producing natural cellulose. In this study, guaiacol was used as the model compound to investigate the degradation of lignin in luffa. A new cellulose material was extracted from natural luffa by a pretreatment based on the oxidation and acidity of glow discharge plasma in water. The produced luffa cellulose was dissolved in anhydrous phosphoric/polyphosphoric acid (aPPAC) solvent to prepare cellulose film. Results showed that the reactive species of OH·, HO2· and H3O+ were produced during the plasma discharge of water. The free radicals ·OH were useful in eliminating lignin by the destruction of aromatic structure, whereas H3O+ in eliminating hemicellulose in the luffa raw material. At the conditions of luffa powder concentration of 9.26 g/L, discharge time of 20 min, and plasma power of 100W, the cellulose component was increased to 81.2%. After 25 min, the luffa cellulose was completely dissolved in the aPPAC solvent at 0–5 ?C. Thus, a regenerated cellulose film of cellulose II was prepared. The aPPAC solvent was a good non-derivatizing solvent for the luffa cellulose. The regenerated film exhibited good mechanical properties, wettability and a compact structure. Therefore, plasma pretreatment was an environmentally friendly and high-efficiency method for luffa degumming. The luffa cellulose can be well used in dissolution and regeneration in films.
关键词： plasma treatment,film,dissolution,luffa cellulose
更新于2025-09-23 15:22:29
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Contact Angle Relaxation and Long-lasting Hydrophilicity of Sputtered Anatase TiO <sub/>2</sub> Thin Films by Novel Quantitative XPS Analysis
摘要： The contact angle relaxation of TiO2 surfaces is an important problem that must be understood, particularly for long-lasting hydrophilicity under dark conditions. The relaxation of sputtered anatase TiO2 thin films over a long time (~22 days) in an atmospheric environment was observed using quantitative XPS analysis. A new peak was identified as H2O within a donor-acceptor complex at ~2.57 eV above the lattice oxygen peak. This donor?acceptor complex turns out to be a key factor for long lasting hydrophilicity, and our model is presented. Adventitious carbon contamination was not the main cause of the contact angle relaxation. Instead, samples with lower amounts of donor?acceptor complexes (IDAC/Ibulk ≤ ~5%) underwent contact angle relaxation over time, and samples with a high density of donor?acceptor complexes (IDAC/Ibulk ≥ ~10%) showed good hydrophilicity (contact angle ≤ 20°) over 22 days. Larger amounts of basic Ti?OH relative to acidic OHbridge (ITi?OH/Ibridge ≥ 1) resulted in greater amounts of donor?acceptor complexes (IDAC/Ibulk ≥ ~10%). Thus, basic Ti?OH groups interact with H2O by forming a strong electrostatic donor?acceptor complex, leading to long-lasting hydrophilicity. Indeed, TiO2 was transformed to show long lasting hydrophilicity by high-density oxygen plasma treatment by forming sufficient Ti?OH groups and H2O molecules in the donor?acceptor complexes. Contact angle relaxation is closely related to the interactions between water molecules and the TiO2 surface in the dark. It is suggested that the relaxation depends on the number of electrostatic donor?acceptor complexes. This study provides new insight by linking theoretical studies with the experimental contact angle at the TiO2 surface in an ambient environment and is the first study that provides the presented relaxation mechanism.
关键词： Hydrophilicity,Sputtering,Plasma treatment,Contact angle relaxation,XPS analysis,Donor-acceptor complex,TiO2 thin films
更新于2025-09-23 15:22:29