研究目的
Investigating the impact of H2 plasma treatment on the optical constants of aluminum-doped zinc oxide (AZO) thin films for optoelectronic applications.
研究成果
H2 plasma treatment significantly reduces resistivity and improves transmittance of AZO thin films, with detailed changes in optical constants (decrease in refractive index and extinction coefficient in short wavelengths) attributed to oxygen desorption and hydrogen bonding. These findings aid in low-temperature fabrication and design of optoelectronic devices.
研究不足
The study is limited to specific plasma treatment conditions (10 W, 200 °C) and may not generalize to other parameters. The optical constants characterization is confined to the wavelength range of 350–1100 nm, and resistivity from SE analysis differs from Hall measurements due to frequency limitations.
1:Experimental Design and Method Selection:
AZO thin films were deposited using RF sputtering at room temperature and post-treated with H2 plasma at varying durations. Optical constants were characterized using a varied-angle spectroscopic ellipsometer with a Drude-Lorentz dispersion model for data fitting.
2:Sample Selection and Data Sources:
Samples were prepared on fused glass or Si (100) substrates. Data were acquired from ellipsometry, Hall effect measurements, UV-vis-NIR spectrophotometry, XPS, AFM, SEM, and TEM analyses.
3:List of Experimental Equipment and Materials:
Equipment includes an RF sputtering system, PECVD system, Hall effect measurement system, UV-vis-NIR spectrophotometer, spectroscopic ellipsometer, XPS spectrometer, AFM, SEM, and TEM. Materials include AZO target, argon gas, hydrogen gas, and substrates.
4:Experimental Procedures and Operational Workflow:
Deposition of AZO films via RF sputtering, followed by H2 plasma treatment at specified conditions (10 W, 200 °C, varying times). Characterization involved electrical, optical, and structural analyses using the listed equipment.
5:Data Analysis Methods:
Data were analyzed using Drude-Lorentz model fitting for ellipsometry, Tauc's formula for band gap calculation, and standard statistical methods for other measurements.
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UV-vis-NIR spectrophotometer
PerkinElmer Lambda 950
PerkinElmer
Optical transmittance measurement
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XPS spectrometer
Kratos AXIS Ultra DLD
Kratos
Chemical state analysis
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SEM
FE-SEM MERLIN Compact
Zeiss
Cross-sectional imaging
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TEM
Tecnai G2 F20
FEI
Cross-sectional micrograph characterization
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RF sputtering system
INFOVION
INFOVION
Deposition of AZO thin films
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Rotary pump
WSA W2V60
WSA
Vacuum pumping
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Turbo pump
OSAKA TC1103
OSAKA
Vacuum pumping
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PECVD system
Hydrogen plasma treatment
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Hall Effect measurement system
SWIN Hall 8800
SWIN
Measurement of electrical properties
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Spectroscopic ellipsometer
ELLIP-SR-II
Shanghai Bright Enterprise Development Co.
Characterization of optical constants
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AFM
FSM-Nanoview 1000
Fishman Suzhou
Surface micrograph characterization
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