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Ultrasensitive tantalum oxide nano-coated long-period gratings for detection of various biological targets
摘要： In this work we discussed a label-free biosensing application of long-period gratings (LPGs) optimized in refractive index (RI) sensitivity by deposition of thin tantalum oxide (TaOx) overlays. Comparing to other thin film and materials already applied for maximizing the RI sensitivity, TaOx offers good chemical and mechanical stability during its surface functionalization and other biosensing experiments. It was shown theoretically and experimentally that when RI of the overlay is as high as 2 in IR spectral range, for obtaining LPGs ultrasensitive to RI, the overlay’s thickness must be determined with subnanometer precision. In this experiment the TaOx overlays were deposited using Atomic Layer Deposition method that allowed for achieving overlays with exceptionally well-defined thickness and optical properties. The TaOx nano-coated LPGs show RI sensitivity determined for a single resonance exceeding 11,500 nm/RIU in RI range nD=1.335-1.345 RIU, as expected for label-free biosensing applications. Capability for detection of various in size biological targets, i.e., proteins (avidin) and bacteria (Escherichia coli), with TaOx-coated LPGs was verified using biotin and bacteriophage adhesin as recognition elements, respectively. It has been shown that functionalization process, as well as type of recognition elements and target analyte must be taken into consideration when the LPG sensitivity is optimized. In this work optimized approach made possible detection of small in size biological targets such as proteins with sensitivity reaching 10.21 nm/log(ng/ml).
关键词： protein detection,label-free biosensing,optical fiber sensor,tantalum oxide,bacteria detection,long-period grating,atomic layer deposition
更新于2025-11-28 14:23:57
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Dual-Functional Long-Term Plasticity Emulated in IGZO-Based Photoelectric Neuromorphic Transistors
摘要： Indium–gallium–zinc-oxide (IGZO) photoelectric neuromorphic transistors with low-temperature atomic layer deposited Al2O3 gate dielectrics are fabricated. Dual-functional long-term plasticity, including long-term depression (LTD) and long-term potentiation (LTP), is emulated. The emulation of LTD is achieved by applying high-electrical pulse trains on the gate electrode. The LTP emulation is realized by applying light pulse trains on the IGZO channel layer. The operation mechanisms of the LTD and the LTP are discussed based on the electron/hole trapping in the Al2O3 gate dielectrics and the persistent photoconductivity of the IGZO channel layer.
关键词： Neuromorphic transistors,long-term plasticity,atomic layer deposition
更新于2025-11-25 10:30:42
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Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes
摘要： We demonstrate that applying atomic layer deposition-derived molybdenum disulfide (MoS2) catalytic coatings on copper gallium diselenide (CGSe) thin film absorbers can lead to efficient wide band gap photocathodes for photoelectrochemical hydrogen production. We have prepared a device that is free of precious metals, employing a CGSe absorber and a cadmium sulfide (CdS) buffer layer, a titanium dioxide (TiO2) interfacial layer, and a MoS2 catalytic layer. The resulting MoS2/TiO2/CdS/CGSe photocathode exhibits a photocurrent onset of +0.53 V vs RHE and a saturation photocurrent density of ?10 mA cm?2, with stable operation for >5 h in acidic electrolyte. Spectroscopic investigations of this device architecture indicate that overlayer degradation occurs inhomogeneously, ultimately exposing the underlying CGSe absorber.
关键词： hydrogen evolution,molybdenum disulfide,photoelectrochemical water splitting,atomic layer deposition,copper gallium diselenide
更新于2025-11-19 16:56:35
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Photocatalytic CO2 reduction on porous TiO2 synergistically promoted by atomic layer deposited MgO overcoating and photodeposited silver nanoparticles
摘要： In this work, a porous TiO2 photocatalyst derived from metal-organic framework MIL-125 was synthesized and tested for photocatalytic CO2 reduction with water. To improve the photocatalytic performance, innovative materials modifications were employed by decorating TiO2 with atomic layer deposited (ALD) MgO overcoating and photodeposited silver (Ag) nanoparticles at different orders: MgO deposition followed by Ag (i.e. Ag/MgO/TiO2), or Ag deposition followed by MgO (i.e. MgO/Ag/TiO2). The addition of Ag promoted transfer of photoinduced electrons, while the coating of an ultrathin MgO layer inhibited surface charge recombination and enhanced CO2 adsorption. The combination of MgO and Ag resulted in synergistic promotion on CO2 photoreduction greater than the sum of individual promotional effects. The Ag/MgO/TiO2 catalyst with 7 ALD-layers of MgO and 5% Ag was 14 times more active than the pristine TiO2 in terms of CO and CH4 production. In addition, the sequence of MgO/Ag decoration influenced the catalytic activity. The Ag/MgO/TiO2 catalysts were in general more active than the MgO/Ag/TiO2 counterparts, likely due to the different electron mobility and Ag nanoparticle distribution on the surface. This work for the first time reports the novel materials structure of ALD coated MgO and photodeposited Ag nanoparticles on TiO2, and it reveals the importance of optimizing materials morphology and structure to promote the catalytic activity.
关键词： CO2 photoreduction,magnesium oxide,silver nanoparticles,atomic layer deposition,porous TiO2
更新于2025-11-14 17:03:37
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Mo/CIGS/CdS Structures by E‐ALD
摘要： The chalcopyrite CuIn(1-x)GaxSe2 (CIGS) thin films and their cadmium sulfide (CdS) window layer structures (CIGS/CdS) were grown on Mo foil substrate in layer-by-layer fashion by electrochemical atomic layer deposition (E-ALD) and were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and photoelectrochemical (PEC) activity. XRD shows distinct pattern changes from chalcopyrite to chalcopyrite plus CdS structures upon adding E-ALD CdS layer to CIGS layers on Mo substrate. SEM shows that uniform and homogeneously distributed nanoparticles of CdS formed on top of CIGS layers, and EDS shows the successful preparation of CIGS/CdS structures with good atomic ratios in each layer. PEC performance reveals that bare CIGS films were of p-type conductivity but that CIGS/CdS structures n-type with p-type response near null.
关键词： Photoelectrochemistry,CuIn(1-x)GaxSe2/cadmium sulfide,Chalcopyrites,Electrochemical atomic layer deposition
更新于2025-11-14 14:48:53
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Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
摘要： Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s-1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s-1). The better SRV with AlOxNy film is due to the collective effect of field-effect passivation by the presence of fixed negative charges, and chemical passivation by the presence of hydrogen within the film. The capacitance-voltage, and conductance measurements also are carried out using metal-oxide-semiconductor structure to determine the fixed negative charge density (Nf,ox), and defect density of states (Dit) in the AlOxNy films. The better surface passivation is attributed to unusually large Nf,ox of ~6.07 × 1012 cm-2, and minimal Dit of ~1.01 × 1011 cm-2-eV-1 owing to the saturation of Si dangling bonds by the hydrogen within the AlOxNy film matrix after the annealing step.
关键词： Surface passivation,Time-of-flight elastic recoil detection analysis (ToF-ERDA),Aluminum oxynitride,Thermal atomic layer deposition,Black flexible silicon
更新于2025-10-22 19:40:53
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Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature
摘要： Heteroepitaxy with large thermal and lattice mismatch between the semiconductor and substrate is a critical issue for high-quality epitaxial growth. Typically, high growth temperatures (>1000 °C) are required to achieve high-quality GaN epilayers by conventional metal?organic chemical vapor deposition. In this study, the high-quality GaN heteroepitaxy is realized by atomic layer annealing and epitaxy (ALAE) at a low growth temperature of 300 °C. The layer-by-layer, in situ He/Ar plasma treatment at a low plasma power was introduced in each cycle of atomic layer deposition to contribute the e?ective annealing e?ect for signi?cant enhancement of the GaN crystal quality. The Penning e?ect is responsible for signi?cant improvement of the GaN crystal quality due to the incorporation of He into the Ar plasma. The high-resolution transmission electron microscopy, nano-beam electron di?raction, and atomic force microscopy reveal a high-quality nanoscale single-crystal GaN heteroepitaxy and a very smooth surface. The full width at half-maximum of the X-ray rocking curve of the GaN epilayer is as low as 168 arcsec. The low-temperature ALAE technique is highly bene?cial to grow high-quality nanoscale GaN epilayers for sustainable, energy-saving, and energy-e?cient devices including high-performance solid-state lighting, solar cells, and high-power electronics.
关键词： Atomic layer annealing,Atomic layer deposition,Gallium nitride,Atomic layer epitaxy,Plasma treatment
更新于2025-09-23 15:23:52
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Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$HfO2 interfacial layer formed by atomic layer deposition
摘要： X-ray photoelectron spectroscopy has been carried out to characterize the surface of the hafnia (HfO2) thin films grown on n-GaAs wafer by atomic layer deposition, and the surface morphology of the HfO2 layer on GaAs has been analysed using atomic force microscopy. The barrier height (BH) values of 1.03 and 0.93 eV (300 K) for the Au/Ti/HfO2/n-GaAs structures with 3- and 5-nm HfO2 interfacial layers, respectively, have been obtained from the I–V characteristics of the devices, which are higher than the value of 0.77 eV (300 K) for the Au/Ti/n-GaAs diode fabricated by us. Therefore, it can be said that the HfO2 thin layer at the metal/GaAs interface can also be used for BH modification as a gate insulator in GaAs metal-oxide semiconductor (MOS) capacitors and MOS field-effect transistors. The ideality factor values have been calculated as 1.028 and 2.72 eV at 400 and 60 K; and as 1.04 and 2.58 eV at 400 and 60 K for the metal–insulating layer–semiconductor (MIS) devices with 3- and 5-nm interfacial layers, respectively. The bias-dependent BH values have been calculated for the devices by both Norde’s method and Gaussian distribution (GD) of BHs at each sample temperature. At 320 K, the (cid:2)b(V ) value at 0.70 V for a 3-nm MIS diode is about 1.08 eV from the (cid:2)b(V ) vs. V curve determined by the GD, and about 0.99 eV at 0.58 V for a 5-nm MIS diode. It has been seen that these bias-dependent BH values are in close agreement with those obtained by Norde’s method for the same bias voltage values.
关键词： metal–insulating layer–semiconductor (MIS) device,Barrier height modification and inhomogeneous,bias-dependent barrier height,temperature-dependent MIS diode parameters,atomic layer deposition (ALD)
更新于2025-09-23 15:23:52
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Chemical Analysis of the Interface between Hybrid Organic-Inorganic Perovskite and Atomic Layer Deposited Al2O3
摘要： Ultrathin metal oxides prepared by atomic layer deposition (ALD) have gained utmost attention as moisture and thermal stress barrier layers in perovskite solar cells (PSCs). We have recently shown that 10 cycles of ALD Al2O3 deposited directly on top of the CH3NH3PbI3-xClx perovskite material, are effective in delivering a superior PSC performance with 18% efficiency (compared to 15% of the Al2O3-free cell) with a long-term humidity-stability of more than 60 days. Motivated by these results, the present contribution focuses on the chemical modification which the CH3NH3PbI3-xClx perovskite undergoes upon growth of ALD Al2O3. Specifically, we combine in situ Infrared (IR) spectroscopy studies during film growth, together with X-ray Photoelectron Spectroscopy (XPS) analysis of the ALD Al2O3/perovskite interface. The IR-active signature of the NH3+ stretching mode of the perovskite undergoes minimal changes upon exposure to ALD cycles, suggesting no diffusion of ALD precursor and co-reactant (Al(CH3)3 and H2O) into the bulk of the perovskite. However, by analyzing the difference between the IR spectra associated with the Al2O3 coated perovskite and the pristine perovskite, respectively, changes occurring at the surface of perovskite are monitored. The abstraction of either NH3 or CH3NH2 from the perovskite surface is observed as deduced by the development of negative N-H bands associated to its stretching and bending modes. The IR investigations are corroborated by XPS study, confirming the abstraction of CH3NH2 from the perovskite surface, whereas no oxidation of its inorganic framework is observed within the ALD window process investigated in this work. In parallel, the growth of ALD Al2O3 on perovskite is witnessed by the appearance of characteristic IR-active Al-O-Al phonon and (OH)-Al=O stretching modes. Based on the IR and XPS investigations, a plausible growth mechanism of ALD Al2O3 on top of perovskite is presented.
关键词： infrared spectroscopy,x-ray photoelectron spectroscopy,atomic layer deposition,Al2O3,perovskite
更新于2025-09-23 15:23:52
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Atomic layer deposition of hybrid metal oxides on carbon nanotube membranes for photodegradation of dyes
摘要： Synthetic dye pollution is a worldwide problem and quick remedies are urgently needed. Photocatalysis is a promising method to solve this problem and carbon nanotubes (CNTs) are promising components in producing high-performance composite photocatalysts. Nevertheless, the strong hydrophobicity dramatically impedes its application in aqueous environments. In this study, hydrophilic CNT-hybrid metal oxides (ZnO and TiO2) membranes were prepared by atomic layer deposition (ALD). We demonstrate that ALD is an efficient and flexible method to enhance the photocatalytic activity of CNT-based membranes, especially the membranes used in wastewater treatments. The hybrid hexagonal wurtzite ZnO and anatase TiO2 on CNTs after calcination could effectively enhance electron transfer and reduce photo-generated electron-holes recombination. The membranes exhibit preferable photocatalytic activity and stable reusability in dye degradation. This strategy of "ALD on CNTs" is expected to create other CNT-based membranes with additional functionalities and has bright prospect for wastewater treatments.
关键词： Carbon nanotubes,Photocatalytic degradation,Hybrid metal oxides,Atomic layer deposition
更新于2025-09-23 15:23:52