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Composition Dependence of the Band Gap Energy of the Sb-Rich GaBixSb1?x Alloy (0?≤?x?≤?0.26) Described by the Modified Band Anticrossing Model
摘要： The impurity–host interaction and the impurity–impurity interaction exist in the Sb-rich GaBixSb1?x alloy. It is found that the effect of impurity–impurity on the band gap energy can be neglected. The impurity–host interaction not only depends on the Bi content, but also on the content of the host material. In order to describe the band gap energy of the Sb-rich GaBixSb1?x, the virtual crystal approximation for conduction band minimum (CBM) and the modified valence band anticrossing model for valence band maximum (VBM) are applied. It is also found that when the Bi content is about 0.259, the band gap energy of GaBixSb1?x becomes 0 eV. In addition, it is found that the U CBM depending on Bi content is much stronger than that of the U VBM. It is relative to two factors. One is that the conduction band offset between GaSb and GaBi is much larger than the valence band offset. The other is that the energy difference between the Bi level and the U VBM of GaSb is very large. The large energy difference usually leads to a weak coupling interaction between the Bi level and the U VBM of GaSb, thus resulting in weak composition dependence of the U VBM in the Sb-rich range.
关键词： Bi level,band gap energy,Sb-rich,GaBixSb1?x
更新于2025-09-23 15:23:52
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Study on Band-Gap Behaviors of 2D Hierarchical Re-Entrant Lattice Structures
摘要： An investigation of Poisson’s ratios and band gap behaviors of 2D hierarchical re-entrant lattice structures is conducted using finite element method (FEM). The structure with a hierarchy order n (n≥1) is constructed by replacing each outmost vertex of the re-entrant octagons of a hierarchical structure of hierarchy order n?1 with a smaller self-similar re-entrant octagon. The dispersion relation and transmission spectrum of the proposed hierarchical structures are analyzed based on the Bloch’s theorem. The effects of geometrical parameters, order of rotational symmetry and orientation angle of some types of re-entrant polygon cores on the lattice Poisson’s ratio and band gap structures are also investigated. Results show that the re-entrant structures with first order hierarchy exhibit a wider band gap and a stronger attenuation effect compared with structures without structural hierarchy. The first order 2D hierarchical re-entrant structure with a negative Poisson’s ratio of ?0.032 exhibits the widest band gap, 17.8% wider than that of the zeroth order 2D re-entrant structure. The order of rotational symmetry and the orientation angle of the re-entrant polygon cores of the lattice have a strong impact on the lattice Poisson’s ratio and band structures.
关键词： re-entrant,negative Poisson’s ratio,band gap,hierarchical structure,transmission spectrum
更新于2025-09-23 15:23:52
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Electronic and optical properties of double perovskite oxide Pb2ScMO6 (M = Ta, Sb) using a first principles approach
摘要： In this study, the electronic and optical properties of the double perovskite (DP) oxides Pb2ScMO6 (M = Sb, Ta) were systematically investigated using the full-potential linearized augmented plane wave model. Calculations were performed using both the generalized gradient approximation and modified Becke–Johnson potentials. The results showed that the O-atom is responsible for the maxima in the density of states (DOS) in the valence band, whereas the Sc-atom contributes to the maximum DOS in the conduction band. The dielectric constants, absorption coefficients, and reflectivity were also calculated for these systems. The results indicated the presence of wide band gaps in both of these DPs, thereby indicating their insulating semiconducting nature.
关键词： photon energy,energy,dielectric,double perovskite,density of states,band gap
更新于2025-09-23 15:23:52
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Luminescent, optical, magnetic and metamaterial behavior of cerium complexes
摘要： The complexes of cerium with nitrogen, oxygen and sulfur donor ligands were prepared by conventional method. These newly synthesized complexes were characterized by FTIR, UV-Vis, DART Mass, TGA, PXRD, SEM and TEM techniques. The magnetic studies were carried out by the vibrating sample magnetometer. The optical constants were measured by absorption and reflection spectra as a function of wavelength. The concentration dependence of refractive index and absorption were observed by the experimental method, which reveals that these parameters are affected by change in concentration. The optical band gap obtained from Tauc-plot indicates its probability to be a good semiconductor. The luminescence behavior of these cerium complexes were observed by the absorption and emission spectra and the emission life time were calculated by their life time spectra.
关键词： Optical band gap,Luminescence,Refractive index,Magnetic studies
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Current-Fed Quasi Z-Source Inverter Based PV Distributed Generation Controller
摘要： Recently, the renewable photovoltaic distributed generation (PV-DG) enjoys a rapid growth globally due to the advancement in solar systems and power electronics technologies. However, the intermittent nature of solar radiation and performance of the attached power converters, inevitably poses some challenges to the power grids integrated large-scale solar-farms (SF). These challenges include frequency oscillations, voltage variation and power quality issues. To overcome these problems, this study proposes a Current-Fed quasi Z-source Inverter (CF-qZSI) as an alternative converter for distribution generation controllers to facilitate the integration of a PV energy source into a weak power system. The detailed model of the CF-qZSI-based distribution controller (CqZDC) and its control system are developed. The dynamic performance of the CqZDC device is evaluated to validate different objectives using an actual field data and RTDS simulation platform.
关键词： frequency stability,current source inverter,wide band gap devices,Accommodation of renewable energy resources,power quality improving,facilitating of distributed electricity generations
更新于2025-09-23 15:23:52
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[IEEE 2018 20th International Conference on Transparent Optical Networks (ICTON) - Bucharest (2018.7.1-2018.7.5)] 2018 20th International Conference on Transparent Optical Networks (ICTON) - Thin Films of Barium Strontium Titanate from the Viewpoint of Light-Based Applications
摘要： In this paper we report results from optical transmittance spectroscopy complemented with data on structure from XRD measurements to determine optical properties of a series of as-deposited and annealed (at 900 °C) BaSrTiO3 (BST) thin films deposited by RF magnetron sputtering. The members of the series differ by the substrate temperature and additional oxygen to accompany argon in the deposition chamber. The perovskite structure with weak preferred (110) orientation was detected for annealed BST thin films whilst the as-deposited films were amorphous. Dispersive optical properties – refractive indices, absorption coefficients and optical band gaps were determined from transmittance spectra. After annealing refractive indices increase to prove the densification of material accompanied by the thickness shrinkage. Optical band gaps calculated either by Tauc procedure or determined as iso-absorption levels are also found to be deposition dependent.
关键词： absorption coefficient,thin films,barium strontium titanate,refractive index,optical band gap
更新于2025-09-23 15:23:52
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Unique Substitution Effect at 5,5′ Positions of a Fused Azobenzene-Boron Complex with N=N Double-Bond π-Conjugated System
摘要： The recent report illustrates superior optical properties, such as near infrared emission, from the polymers with the connection positions at 4,4′ positions in the fused azobenzene–boron complex (BAz). In this study, we initially demonstrate that further narrower band gap can be realized by the substituent effect with bromine groups at 5,5′ positions of BAz than that at 4,4′ positions. From the series of mechanistic studies, perturbation of the energy levels were rationally explained by the contribution difference between the inductive effect and the variable resonance effect which is correlated to the degree of electron distribution of molecular orbitals at the substituent positions. Moreover, it was found that unique electronic states, such as delocalized highest occupied molecular orbital and localized lowest unoccupied molecular orbital, should appear on the main chains of the BAz-containing copolymers with fluorene and bithiophene units according to the optical and electrochemical data and theoretical calculations. Taking advantage of property tunability and the dramatic low LUMO energy level (near ?4.0 eV) of the BAz unit, it can be said that BAz should be a conjugated building block favorable for building advanced optoelectronic devices.
关键词： azobenzene,boron,narrow band gap,conjugated polymer,low LUMO
更新于2025-09-23 15:23:52
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Impact of strained silicon on the device performance of a bipolar charge plasma transistor
摘要： In this manuscript we analyze a unique approach to improve the performance of the bipolar charge plasma transistor (BCPT) by introducing a strained Si/SixGe1?x layer as the active device region. For charge plasma realization different metal work-function electrodes are used to induce n+ and p+ regions on undoped strained silicon-on-insulator (sSOI or SixGe1?x) to realize emitter, base, and collector regions of the BCPT. Here, by using a calibrated 2-D TCAD simulation the impact of a Si mole fraction x (in SixGe1?x) on device performance metrics is investigated. The analysis demonstrates the band gap lowering with decreasing Si content or effective strain on the Si layer, and its subsequent advantages. This work reports a significant improvement in current gain, cutoff frequency, and lower collector breakdown voltage (BVCEO) for the proposed structure over the conventional device. The effect of varying temperature on the strained Si layer and its implications on the device performance is also investigated. The analysis demonstrates a fair device-level understanding and exhibits the immense potential of the SixGe1?x material as the device layer. In addition to this, using extensive 2-D mixed-mode TCAD simulation, a considerable improvement in switching transient times are also observed compared to its conventional counterpart.
关键词： bipolar charge plasma transistor (BCPT),mole fraction,cutoff frequency (fT),current gain (β),collector breakdown voltage (BVCEO),strained Si layer,band gap lowering
更新于2025-09-23 15:23:52
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Synthesis and optical band gap determination of CuO nanoparticles from salen-based infinite coordination polymer nanospheres
摘要： A symmetric bi-carboxylic acid functionalized salen-type ligand was used as organic linker to prepare a Cu-based infinite coordination polymer. The analytical data demonstrated that the proposed structure contains one bi-carboxylic acid salen type ligand and two copper cations in each monomeric unit. One of the Cu2+ cations is coordinated by N2O2 site of salen ligand and the other one acts as node to connect metal-organic linkers to each other. The reasonable formation mechanism for coordination polymer formation proposed which shows the formation of nanoparticles from intertwined oligomer chains. The prepared coordination polymer was used as a good precursor to synthesis copper oxide nanoparticles with larger band gap relative to bulk CuO.
关键词： CuO,salen-type ligand,ICP,band gap,nanoparticles
更新于2025-09-23 15:23:52
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Skeletal tailoring of two-dimensional π-conjugated polymer (g-C3N4) through sodium salt for solar-light driven photocatalysis
摘要： Structural modi?cation of graphitic carbon nitride (g-C3N4) by addition of sodium salt has been investigated for solar light-driven photocatalysis. The results from optical study indicates that the incorporation of sodium ions decreases band gap energy along with upward shifts of conduction and valence band. However, no substantial increment in surface area was observed, but morphological and optical studies con?rm that the structural deformation of g-C3N4 through sodium salt activates the ?n π * electronic transition, which can extend the absorption range to the red region attributing towards a reduced charge recombination, narrow band gap, and high conduction band edge. Furthermore, the photocatalytic activity of sodium doped g-C3N4 (0.6Na-g-C3N4) was examined under solar light for di?erent operational conditions in terms of phenol degradation of real tannery e?uent, and it was found that under optimum experimental conditions, i.e., 5 h solar irradiance, pH 5, H2O2 concentration 800 mg/L with a ?ow rate of 4 L/h, 0.6 Na- g-C3N4 exhibits 84.22% reduction in phenol while for g-C3N4 only 63.53% was observed.
关键词： Graphitic carbon nitride,Photocatalytic activity,Charge recombination,Solar irradiance,Band gap,Sodium salt
更新于2025-09-23 15:23:52