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The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells
摘要： In this paper, we report the development of Cd-free bu?ers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)2-based solar cells. The ALD process gives good control of thickness and the S/S +O ratio content of the ?lms. The in?uence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) bu?er layers on the e?ciency of the Cu(In,Ga)(S,Se)2 solar cells were investigated. We present the ?rst results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm2. These Zn(O,S) layers were deposited by atomic layer deposition at 120?C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H2S/H2O+H2S) process results in a S/Zn ratio of 0.7. We achieved independently certi?ed aperture area e?ciencies of 17.1% for 0.4 cm2 cells.
关键词： atomic layer deposition,Zn(O,S) thickness,Cu(In,Ga)(S,Se)2 absorber layer,Zn(O,S) ratio,Zn(O,S) temperature window,bu?er layer,solar cell
更新于2025-09-16 10:30:52
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Degradation of Mg-doped zinc oxide buffer layers in thin film CdTe solar cells
摘要： Cadmium Sulphide is the conventional n-type bu?er layer used in thin ?lm Cadmium Telluride solar cells. It is well known that Cadmium Sulphide causes optical losses and sulphur di?uses into the absorber during high temperature activation. Sputter-deposited Mg-doped ZnO (MZO) has been shown to be an attractive bu?er layer for Cadmium Telluride solar cells due to its transparency and tuneable band gap. It is also stable to high temperature processing and avoids di?usion of elements into the cadmium telluride absorber during the cadmium chloride activation treatment. However, degradation is observed in solar cells incorporating MZO bu?er layers. Analysis of the MZO ?lm surface potential has revealed signi?cant ?uctuations in the thin ?lm work function once the layer is exposed to the atmosphere following deposition. These ?uctuations are attributed to the high reactivity to water vapour of the MgO contained in the MZO ?lms. This has been analysed using X-ray Photoelectron Spectroscopy to determine corresponding changes in the surface chemistry. The Zinc Oxide component is relatively stable, but the analysis shows that MgO forms a Mg(OH)2 layer on the MZO surface which forms a secondary barrier at the MZO/CdTe interface and/or at the interface between MZO and the Fluorine-doped SnO2. This a?ects the Fill Factor and as a consequence it degrades the conversion e?ciency.
关键词： Surface contamination,Degradation,Thin ?lm solar cells,Cadmium telluride,Magnesium-doped zinc oxide,Hydroxide,Bu?er
更新于2025-09-11 14:15:04