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Investigation of valence plasmon excitations in GMZO thin film and their suitability for plasmon-enhanced buffer-less solar cells
摘要： The approach of eliminating buffer layer in conjunction with plasmon-enhanced transparent conduction oxide (TCO) layer is an attractive methodology to realize low-cost ultrathin buffer-less solar cells (SCs) by introducing plasmon-enhanced absorption and reduced fabrication steps. Here, we report a novel method to generate wide-band sputter-stimulated plasmonic feature in Ga-doped-MgZnO (GMZO) thin-films, which are observed due to the different metallic and metal-oxide nanoclusters formation. Through an extensive analysis of photoelectron spectroscopy, spectroscopic ellipsometry, and field-emission scanning electron microscope measurements the evaluation of plasmonic features and correlation of them with various nanoclusters inside GMZO thin-film is performed. Additionally, the suitability and expected performance of plasmon-enhanced GMZO thin-film based buffer-less SCs are probed through; 1) band-offset analysis at the plasmon enhanced-GMZO/CIGSe heterojunction; 2) simulation studies to analyze the effect of conduction band-offset (CBO) on the performance of the buffer-less SCs; 3) predicting the performance of the buffer-less SC using the parameters of GMZO thin-films with varying CBO, and 4) envisaging the concept of ultrathin buffer-less SC with calculated CBO and absorber layer thickness (300 nm) for ultrathin SCs. Moreover, at the experimentally calculated band-offset with ultrathin absorber layer thickness (300 nm), theoretically calculated buffer-less SC performance parameters estimated to be open-circuit voltage (Voc): 0.75 V, short-circuit current density (Jsc): 17.29 mA/cm2, fill-factor (FF): 80.5%, and efficiency (Eff): 10.46%.
关键词： Ultrathin solar cells,UPS,CIGSe,Plasmons
更新于2025-11-21 11:03:13
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The characteristics of Cu(In, Ga)Se2 thin-film solar cells by bandgap grading
摘要： The performance of CIGSe-1 and CIGSe-2 absorber layers are compared with Eg grading such that a higher Ga content is incorporated into the back region. A wider depth range of the high-Ga region near the back of a CIGSe absorber layer can reduce its performance due to the increased formation of Ga-related defects and defect clusters. Therefore, for an Eg-graded CIGSe layer with a wider Eg on the back surface, appropriate Eg grading can improve its performance.
关键词： CIGSe,bandgap grading,defect,surface potential,solar cell
更新于2025-11-14 17:28:48
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Over 6% Efficient Cu(In,Ga)Se2 Solar Cell Screen-Printed from Oxides on FTO
摘要： A new approach to fabricate copper, indium, gallium diselenide (CIGSe) solar cells on conductive fluorine-doped tin oxide (FTO) reached an efficiency of over six per cent for champion photovoltaic device. Commercial oxide nanoparticles are formulated into high-quality screen printable ink based on ethyl cellulose solution in terpineol. The high homogeneity and good adhesion properties of the oxide ink play an important role in obtaining dense and highly crystalline photoabsorber layers. This finding reveals that solution-based screen printing from readily available oxide precursors provides an interesting cost-effective alternative to current vacuum- and energy-demanding processes of the CIGSe solar cell fabrication.
关键词： screen-printing,ink formulation,photovoltaics,CIGSe,microstructure,oxides nanoparticles
更新于2025-09-23 15:21:01
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Properties of Co‐Evaporated RbInSe <sub/>2</sub> Thin Films
摘要： The formation of an Rb-containing In-Se compound at the surface of Cu(In, Ga)Se2 (CIGS) thin films is assumed to be part of the mechanism of RbF post-deposition treatments (PDTs) performed on these absorber layers. Alkali-PDTs have acquired attention lately as they significantly enhance the efficiency of CIGS solar cells. In this contribution the formation of various phases during the RbF-PDT has been investigated. The results indicate that RbInSe2 is the most probable phase to form. Combining theoretical and experimental investigations, fundamental properties of a thermally co-evaporated RbInSe2 thin film are reported in order to serve as reference values in further studies.
关键词： CIGSe thin film solar cells,crystal structure,RbInSe2 deposition,defect calculation,electronic structure
更新于2025-09-04 15:30:14