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- 2018
- contrast stretch
- CMOS image sensor
- point-of-care (POC) diagnosis
- bio-microfluidic imaging
- Optoelectronic Information Science and Engineering
- Xi’an University of Technology
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[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA, USA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - 40-Gbit/s 850-nm VCSEL-Based Full-CMOS Optical Link with Power-Data Rate Adaptivity
摘要： An optical link based on directly modulated vertical-cavity surface-emitting laser (VCSEL) at 850-nm wavelength using commercial VCSEL and photodiode operating error-free (BER < 10?12) at 40 Gbit/s is reported. The transmitter is implemented in a 14-nm FinFET CMOS while the receiver (RX) in 28-nm digital bulk-CMOS technologies. This is the fastest 850-nm VCSEL-based single-lane non-return-to-zero optical link with all the analog front-end components fabricated in CMOS. An energy-per-bit of 3.4 pJ/bit is measured at 40 Gbit/s. At the circuits can be decreased adaptively to save power. This results in 2.7 pJ/bit at 20 Gbit/s. A sensitivity of ?1.9 dBm optical modulation amplitude could be measured at the RX for 40 Gbit/s.
关键词： VCSEL,laser driver,CMOS integrated circuits,Optical interconnects,optical receiver
更新于2025-09-04 15:30:14
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CMOS-compatible graphene
摘要： Complementary metal–oxide–semiconductor (CMOS)-based integrated circuits use metal interconnect wires, which are made of aluminium and, more recently, copper, to provide electrical connections between the various circuit components. As technology node scaling has continued to fit more devices per square inch of silicon, interconnect wire cross-sections have needed to shrink, leading to increased resistivity, heating and electromigration issues. Recent investigations into the use of metals with higher melting points than copper, such as cobalt and ruthenium, have shown promising electromigration stability results, but their higher resistivities may limit their application to short local interconnects only. Similarly, attempts to use highly conductive graphene have so far been limited due to the need for high processing temperatures, which are incompatible with CMOS technologies. Kaustav Banerjee and colleagues at the University of California, Santa Barbara have now developed an approach to fabricate intercalation-doped graphene nanoribbon interconnects within the thermal constraints of CMOS technology processing. The method, which is based on a pressure-assisted solid-phase diffusion technique, brings the growth temperature down to 300 °C, and the researchers are able to demonstrate the fabrication of 20-nm-wide multilayer graphene interconnects on SiO2. The resistivity of the interconnects is less than that of metal interconnects with similar cross-sections, and the results suggest a four-fold reduction in circuit delay could be achieved if they were used as an alternative to cobalt- and ruthenium-based interconnects. Furthermore, stability and reliability analysis suggests an absence of any electromigration-related issues.
关键词： interconnects,CMOS,resistivity,electromigration,graphene
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 18th International Conference on Bioinformatics and Bioengineering (BIBE) - Taichung, Taiwan (2018.10.29-2018.10.31)] 2018 IEEE 18th International Conference on Bioinformatics and Bioengineering (BIBE) - Nonlinear CMOS Image Sensor with SOC Integrated Local Contrast Stretch for Bio-Microfluidic Imaging
摘要： a nonlinear single-slope ADC with SOC integrated local contrast stretch using a configurable multi-frequency counter for bio-microfluidic imaging is presented in this paper. Compared with the conventional off-chip global contrast stretching algorithm, this method does not degrade image quality at the interested light intensity range (cell) at the cost of unconsidered range (sheath fluid) and can be integrated into CMOS image sensor directly. Meanwhile, this method provides higher precision of cell image for the later super-resolution reconstruction. The simulation results indicate that more details of cell image can be obtained in this method.
关键词： contrast stretch,CMOS image sensor,point-of-care (POC) diagnosis,bio-microfluidic imaging
更新于2025-09-04 15:30:14