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过滤筛选
- 2018
- contrast stretch
- CMOS image sensor
- point-of-care (POC) diagnosis
- bio-microfluidic imaging
- Optoelectronic Information Science and Engineering
- Xi’an University of Technology
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Heavily Irradiated 65-nm Readout Chip With Asynchronous Channels for Future Pixel Detectors
摘要： This paper discusses the main results relevant to the characterization of an analog front-end processor designed in view of experiments with unprecedented particle rates and radiation levels at the high-luminosity Large Hadron Collider (HL-LHC). The front-end channel presented in this paper is part of the CHIPIX65-FE0 prototype, a readout application-speci?ed integrated circuit designed in a 65-nm CMOS technology in the frame of the CERN RD53 collaboration. The prototype integrates a 64 × 64 pixel matrix, divided into two 32 × 64 submatrices, featuring squared pixels with 50-μm pitch, embodying two analog front-end architectures based on synchronous and asynchronous hit discriminators. This paper is focused on the characterization of the array with asynchronous channels, before and after exposure to ionizing doses up to 630 Mrad(SiO2) of X-rays. The analog chain takes a per-channel area close to 1000 μm2, with a power dissipation of around 5 μW. The mean value of the equivalent noise charge, not signi?cantly affected by radiation, is close to 100 electrons with no sensor connected to the front end. The threshold dispersion before irradiation is 55 electrons, for a tuned threshold of 600 electrons, with a moderate increase after irradiation. In-pixel analog-to-digital conversion, based on the time-over-threshold technique, is not appreciably in?uenced by the radiation as well. The assessed performance guarantees sub-1000 electrons stable threshold operations, which is a mandatory feature for highly ef?cient readout chips at the HL-LHC.
关键词： pixel readout,Analog front ends,electronic noise,CMOS processes,ionizing radiation effects
更新于2025-09-23 15:21:01
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Development on Super-thin & High-Pixel CMOS Image Sensor Module
摘要： This paper systematically reports the development on super-thin and high-pixel CMOS image sensor (CIS) module in terms of substrate design, process development, materials selection and reliability test. The as-developed super-thin chip scale package (SCSP) can greatly reduce the CIS module thickness up to 0.4 mm without sacrificing its reliability.
关键词： Super-thin chip scale package,CIS module,CMOS image sensor
更新于2025-09-23 15:21:01
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Open-Access Silicon Photonics: Current Status and Emerging Initiatives
摘要： Silicon photonics is widely acknowledged as a game-changing technology driven by the needs of datacom and telecom. Silicon photonics builds on highly capital-intensive manufacturing infrastructure, and mature open-access silicon photonics platforms are translating the technology from research fabs to industrial manufacturing levels. To meet the current market demands for silicon photonics manufacturing, a variety of open-access platforms is offered by CMOS pilot lines, R&D institutes, and commercial foundries. This paper presents an overview of existing and upcoming commercial and noncommercial open-access silicon photonics technology platforms. We also discuss the diversity in these open-access platforms and their key differentiators.
关键词： CMOS,photonic manufacturing,silicon photonics,open-access,foundry,multiproject wafer (MPW),photonic integrated circuits (PICs)
更新于2025-09-23 15:21:01
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[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA, USA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - Crack-Free Silicon-Nitride-on-Insulator Nonlinear Circuits for Continuum Generation in the C-Band
摘要： We report on the fabrication and testing of silicon-nitride-on-insulator nonlinear photonic circuits for complementary metal–oxide–semiconductor (CMOS) compatible monolithic co-integration with silicon-based optoelectronics. In particular, a process has been developed to fabricate low-loss crack-free Si3N4 730-nm-thick ?lms for Kerr-based nonlinear functions featuring full process compatibility with existing silicon photonics and front-end Si optoelectronics. Experimental evidence shows that 2.1-cm-long nanowires based on such crack-free silicon nitride ?lms are capable of generating a frequency continuum spanning 1515–1575 nm via self-phase modulation. This work paves the way to time-stable power-ef?cient Kerr-based broad-band sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.
关键词： frequency continuum,photonic integrated circuits (PICs),Complementary metal–oxide–semiconductor (CMOS),nonlinear optics,silicon-nitride-on-insulator (SiNOI)
更新于2025-09-23 15:21:01
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Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
摘要： The impact of the manufacturing process on the radiation induced degradation effects observed in CMOS image sensors at the MGy total ionizing dose levels is investigated. Moreover, the vulnerability of the partially pinned photodiodes at moderate to high total ionizing doses is evaluated for the first time to our knowledge. It is shown that the 3T standard partially pinned photodiode has the lowest dark current before irradiation, but its dark current increases to ~1 pA at 10 kGy(SiO2). Beyond 10 kGy(SiO2), the pixel functionality is lost. The comparison between several CIS technologies points out that the manufacturing process impacts the two main radiation induced degradations: the threshold voltage shift of the readout chain MOSFETs and the dark current increase. For all the tested technologies, 1.8V MOSFETs exhibit the lower threshold voltage shift and the N MOSFETs are the most radiation tolerant. Among all the tested devices, 1.8V sensors achieve the best dark current performance. Several radiation-hard-by-design solutions are evaluated at MGy level to improve further the understanding of CIS radiation hardening at extreme total ionizing dose.
关键词： Gate Overlap,Radiation Effects,Drain,CMOS Image sensors,Partially Pinned Photodiode,Dark Current,TID,Threshold shift,RHBD
更新于2025-09-23 15:21:01
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ISFET Arrays in CMOS: A Head-to-Head Comparison between Voltage and Current Mode
摘要： This paper demonstrates and compares three configurations for ISFET arrays fabricated in unmodified CMOS that facilitate chemical imaging with linear pH-to-output conversion. Specifically, the typical voltage-mode source-follower configuration is compared against our recently proposed current-mode approach using an ISFET in velocity saturation. These two topologies are also compared against an extension of the current-mode topology to include a programmable-gate capacitor inside the pixel stack for offset compensation. Various performance metrics such as linearity, speed, power consumption, size, attenuation and noise have been experimentally measured to quantify the performance of each approach and a figure-of-merit has been defined to capture the overall performance. Using this figure-of-merit the current-mode approach results in the best overall performance. Through this work however, the relative merits and limitations of each approach are identified to be used as a guide for future designs which are usually application-specific. Furthermore, we illustrate methods used to obtain standard ISFET performance metrics in order to standardize the comparison of ISFET arrays using the figure-of-merit.
关键词： CMOS,pH sensor,ISFET,voltage-mode,programmable-gate,array,current-mode
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Nanoprobe-Enabled Electron Beam Induced Current Measurements on III-V Nanowire-Based Solar Cells
摘要： The development of two new types of high-density, electroless plated microelectrode arrays for CMOS-based high-sensitivity direct bacteria and HeLa cell counting are presented. For emerging high-sensitivity direct pathogen counting, two technical challenges must be addressed. One is the formation of a bacteria-sized microelectrode, and the other is the development of a high-sensitivity and high-speed amperometry circuit. The requirement for microelectrode formation is that the gold microelectrodes are required to be as small as the target cell. By improving a self-aligned electroless plating technique, the dimensions of the microelectrodes on a CMOS sensor chip in this work were successfully reduced to 1.2 μm × 2.05 μm. This is 1/20th of the smallest size reported in the literature. Since a bacteria-sized microelectrode has a severe limitation on the current flow, the amperometry circuit has to have a high sensitivity and high speed with low noise. In this work, a current buffer was inserted to mitigate the potential fluctuation. Three test chips were fabricated using a 0.6-μm CMOS process: two with 1.2 μm × 2.05 μm 1024 × 1024 and 4 μm × 4 μm (16 × 16) sensor arrays and one with 6-μm × 6-μm (16 × 16) sensor arrays; and the microelectrodes were formed on them using electroless plating. The uniformity among the 1024 × 1024 electrodes arranged with a pitch of 3.6 μm × 4.45 μm was optically verified. For improving sensitivity, the trenches on each microelectrode were developed and verified optically and electrochemically for the first time. Higher sensitivity can be achieved by introducing a trench structure than by using a conventional microelectrode formed by contact photolithography. Cyclic voltammetry (CV) measurements obtained using the 1.2 μm × 2.05 μm 16 × 16 and 6-μm × 6-μm 16 × 16 sensor arrays with electroless-plated microelectrodes successfully demonstrated direct counting of the bacteria-sized microbeads and HeLa cells.
关键词： Bacteria counting,HeLa cells,electroless plating,point-of-care testing,CMOS,microelectrode array
更新于2025-09-23 15:19:57
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An Ea??band digitally controlled oscillator with <i>effective</i> tuning bank
摘要： An E-band digitally controlled oscillator (DCO) with effective tuning bank is presented and fabricated in 40 nm CMOS technology. The DCO is promoted with an effective fine tuning bank based on a binary-weighted switched capacitors array connected with the secondary coil of an effective flipped stacked transformer with weak mutual coupling factor to improve the tradeoff relationship among tuning range, circuit complexity and frequency resolution. The measured best fine tuning step of the DCO is 2.21 MHz. The operating frequencies range of the DCO covers from 76.61 to 84.51 GHz. The DCO also achieves a figure of merit normalized for area (FoMA) of ?185.1 dBc/Hz.
关键词： CMOS,tuning bank,transformer,DCO,E-band
更新于2025-09-23 15:19:57
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Plasmonic titanium nitride via atomic layer deposition: A low-temperature route
摘要： To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire grown by plasma-enhanced atomic layer deposition. TiN with low losses, high metallicity, and a plasma frequency below 500 nm was achieved at temperatures less than 500 °C by exploring the effects of chemisorption time, substrate temperature, and plasma exposure time on the material properties. A reduction in chemisorption time mitigates premature precursor decomposition at TS > 375 °C, and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25 s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450 °C, compatible with CMOS processes, with 0.5 s chemisorption time and 25 s plasma exposure exhibited a high plasmonic figure of merit (jε0/ε00j) of 2.8 and resistivity of 31 μΩ cm. As a result of the improved quality, subwavelength apertures were fabricated in the TiN thin films and are shown to exhibit extraordinary transmission.
关键词： plasmonic figure of merit,CMOS compatible,low-temperature route,atomic layer deposition,plasmonic titanium nitride
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 4th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC) - Chengdu, China (2019.12.20-2019.12.22)] 2019 IEEE 4th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC) - Deterministic hierarchical joint remote state preparation using partially entangled quantum channel
摘要： The development of two new types of high-density, electroless plated microelectrode arrays for CMOS-based high-sensitivity direct bacteria and HeLa cell counting are presented. For emerging high-sensitivity direct pathogen counting, two technical challenges must be addressed. One is the formation of a bacteria-sized microelectrode, and the other is the development of a high-sensitivity and high-speed amperometry circuit. The requirement for microelectrode formation is that the gold microelectrodes are required to be as small as the target cell. By improving a self-aligned electroless plating technique, the dimensions of the microelectrodes on a CMOS sensor chip in this work were successfully reduced to 1.2 μm × 2.05 μm. This is 1/20th of the smallest size reported in the literature. Since a bacteria-sized microelectrode has a severe limitation on the current flow, the amperometry circuit has to have a high sensitivity and high speed with low noise. In this work, a current buffer was inserted to mitigate the potential fluctuation. Three test chips were fabricated using a 0.6-μm CMOS process: two with 1.2 μm × 2.05 μm 1024 × 1024 and 4 μm × 4 μm (16 × 4) sensor arrays and one with 6-μm × 6-μm (16 × 16) sensor arrays; and the microelectrodes were formed on them using electroless plating. The uniformity among the 1024 × 1024 electrodes arranged with a pitch of 3.6 μm × 4.45 μm was optically verified. For improving sensitivity, the trenches on each microelectrode were developed and verified optically and electrochemically for the first time. Higher sensitivity can be achieved by introducing a trench structure than by using a conventional microelectrode formed by contact photolithography. Cyclic voltammetry (CV) measurements obtained using the 1.2 μm × 2.05 μm 16 × 4 and 6-μm × 6-μm 16 × 16 sensor arrays with electroless-plated microelectrodes successfully demonstrated direct counting of the bacteria-sized microbeads and HeLa cells.
关键词： microelectrode array,point-of-care testing,HeLa cells,electroless plating,Bacteria counting,CMOS
更新于2025-09-23 15:19:57