研究目的
To develop scalable and CMOS compatible plasmonic materials by achieving high plasmonic quality titanium nitride (TiN) on c-plane sapphire grown by plasma-enhanced atomic layer deposition at temperatures less than 500 °C.
研究成果
High plasmonic quality TiN films were successfully grown on c-plane sapphire substrates using PE-ALD at temperatures below 500 °C, demonstrating a high plasmonic figure of merit (FoM) of 2.8 and resistivity of 31 μΩ cm. The optimized growth conditions included a substrate temperature of 450 °C, a chemisorption time of 0.5 s, and a plasma exposure time of 25 s. The study also demonstrated extraordinary transmission through sub-wavelength apertures fabricated in the TiN thin films, highlighting the potential of TiN for practical applications in plasmonic devices.
研究不足
The study is limited by the trade-off between reduced impurity concentration and increased defect density with plasma exposure time, which affects the optical properties of the TiN films. Additionally, the use of TDMAT precursor, which decomposes rapidly at temperatures around 450 °C, may limit the quality of films at higher temperatures.
1：Experimental Design and Method Selection:
The study explored the effects of chemisorption time, substrate temperature, and plasma exposure time on the material properties of TiN films grown by plasma-enhanced atomic layer deposition (PE-ALD).
2：Sample Selection and Data Sources:
TiN films were grown on c-plane sapphire substrates using PE-ALD, with varying chemisorption times, substrate temperatures, and plasma exposure times.
3：List of Experimental Equipment and Materials:
PE-ALD (Veeco Fiji G2) equipped with a remote plasma source, tetrakis(dimethylamido)titanium(IV) (TDMAT) precursor, N2 plasma, c-plane sapphire substrates.
4：Experimental Procedures and Operational Workflow:
Each cycle of ALD consisted of a pulse of TDMAT precursor onto the heated sapphire substrate followed by exposure to an N2 plasma. The critical growth parameters varied were the chemisorption time, substrate temperature, and plasma exposure time.
5：Data Analysis Methods:
Optical characterization was performed using a J.A. Woollam M-2000 variable angle spectroscopic ellipsometer (VASE) by fitting SE and transmission data simultaneously. Chemical compositions were determined using x-ray photoelectron spectroscopy (XPS), and the structural quality of the material was studied using high-resolution ω-2θ and ω-rocking curve x-ray diffraction (XRD) measurements. Resistivity values were determined from Hall effect measurements at 0.5 T.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
