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Si-doping effect on solution-processed In-O thin-film transistors
摘要： In this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first time by a solution processing method. By varying the Si concentration in the In2O3-SiO2 binary oxide structure up to 15 at.%, the thicknesses, densities, and crystallinity of the resulting In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction techniques, while the produced TFTs were characterized by a conventional three-probe method. The results of XRR analysis revealed that the increase in the content of Si dopant increased the thickness of the produced film and reduced its density, and that all the Si-doped ISO thin films contained only a single amorphous phase even after annealing at temperatures as high as 800 °C. The manufactured ISO TFTs exhibited a reduction in the absolute value of threshold voltage VT close to 0 V and low current in the off-state, as compared to those of the non-doped indium oxide films, due to the reduced number of oxygen defects, which was consistent with the behavior of ISO TFTs fabricated by a sputtering method. The ISO TFT with a Si content of 3 at.% annealed at 400 °C demonstrated the smallest subthreshold swing of 0.5 V/dec, VT of ?5 V, mobility of 0.21 cm2/Vs, and on/off current ratio of about 2×107.
关键词： silicon-doped indium oxide,solution processing,amorphous oxide semiconductor,thin-film transistor,spin coating
更新于2025-09-23 15:21:01
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Fabrication cobalt-doped indium oxide/molybdenum disulfide ternary nanocomposite toward carbon monoxide gas sensing
摘要： This paper demonstrated a high-performance carbon monoxide (CO) gas sensor based on cobalt (Co)-doped indium oxide (In2O3) nanoparticles/molybdenum disulfide (MoS2) nanoflowers nanocomposite. Co-In2O3 nanoparticles were synthesized by a co-precipitation method, and flower-like MoS2 was prepared by one-step hydrothermal route. Layer-by-layer self-assembly technique was employed to fabricate Co-In2O3/MoS2 film sensor on an epoxy substrate with interdigital electrodes. Scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were carried out to fully examine the morphology, microstructure, and elementary composition of the as-prepared samples. The CO-sensing characteristics of the Co-In2O3/MoS2 film sensor were systematically investigated under room temperature through exposing the sensor to various concentration of CO gas. The Co-In2O3/MoS2 sensor achieved high sensitivity, fast response/recovery speed, excellent repeatability and stable long-term stability. An approach of combining gas-sensing experiments with density-functional theory (DFT) simulation based on first-principle was used to further explore the CO-sensing mechanism of the Co-In2O3/MoS2 sensor. The Co2+ ion doping, and heterojunctions created at interfaces of Co-In2O3 and MoS2 were attributed to the high-performance CO sensing.
关键词： CO gas sensor,LbL self-assembly,molybdenum disulfide,first-principle theory,Co-doped indium oxide
更新于2025-09-23 15:21:01
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Back-Channel-Etched Thin-Film Transistors With Tunable Acid-Resistant Zr-Doped Indium Oxide Active Layer
摘要： In this paper, a tunable acid-resistant Zr-doped indium oxide (ZrInO) semiconductor material was developed. Detailed studies showed that the acid resistance of ZrInO thin films is tunable and increases with the increase in annealing temperature. Taking advantage of this special property, we successfully fabricated back-channel-etched (BCE) thin-film transistors (TFTs) based on the tunable acid-resistant ZrInO thin film. ZrInO-TFTs with BCE structure exhibited excellent electrical performance with a saturation mobility of 21.4 cm2V?1s?1, a subthreshold swing of 0.28 V/decade, and an on/off current ratio of 1.0 × 107. These results envision that the developed ZrInO semiconductor with tunable acid resistance has a good prospect for the channel layer of BCE-TFTs.
关键词： oxide semiconductor,Anodic Al2O3,tunable acid-resistant Zr-doped indium oxide (ZrInO),back-channel etch (BCE),thin-film transistors (TFTs)
更新于2025-09-09 09:28:46
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Enhanced etching of tin-doped indium oxide due to surface modification by hydrogen ion injection
摘要： It is known that the etching yield (i.e., sputtering yield) of tin-doped indium oxide (ITO) by hydrocarbon ions (CHx+) is higher than its corresponding physical sputtering yield [H. Li et al., J. Vac. Sci. Technol. A 33, 060606 (2015)]. In this study, the effects of hydrogen in the incident hydrocarbon ion beam on the etching yield of ITO have been examined experimentally and theoretically with the use of a mass-selected ion beam system and by first-principles quantum mechanical (QM) simulation. As in the case of ZnO [H. Li et al., J. Vac. Sci. Technol. A 35, 05C303 (2017)], mass-selected ion beam experiments have shown that the physical sputtering yield of ITO by chemically inert Ne ions increases after a pretreatment of the ITO film by energetic hydrogen ion injection. First-principles QM simulation of the interaction of In2O3 with hydrogen atoms shows that hydrogen atoms embedded in In2O3 readily form hydroxyl (OH) groups and weaken or break In–O bonds around the hydrogen atoms, making the In2O3 film less resistant to physical sputtering. This is consistent with experimental observation of the enhanced etching yields of ITO by CHx+ ions, considering the fact that hydrogen atoms of the incident CHx+ ions are embedded into ITO during the etching process.
关键词： quantum mechanical simulation,sputtering yield,tin-doped indium oxide,hydrogen ion injection,physical sputtering,ITO,etching yield,In2O3,hydrocarbon ions,hydroxyl groups
更新于2025-09-04 15:30:14