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Crystallisation Phenomena of In2O3:H Films
摘要： The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infrared spectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O?? and (OH?)O? point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.
关键词： high mobility,In2O3:H,thin films,TCO,crystallisation
更新于2025-09-23 15:22:29
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p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells
摘要： Hot wire chemical vapour deposition (HWCVD) is explored as a way of growing boron-doped silicon for photovoltaic devices. Deposition temperatures are measured using a custom-built monitoring system for two different filament configurations within the HWCVD tool. A refined fabrication process is presented, using an altered filament arrangement, that currently provides a maximum deposition temperature of 535 oC, for growing boron-doped silicon films via HWCVD, with the inclusion of a short post-deposition anneal at 800 oC for 2 minutes. Transmission electron microscopy reveals improvements in interfacial quality, as well as larger grains present after post-annealing treatments. In addition, re-crystallisation of as-deposited amorphous Si films under a short anneal is confirmed using Raman spectroscopy. The enhancements in morphology translate to a boost in current rectification based on our dark current-voltage measurements. This is further supported by secondary-ion mass spectrometry analysis, presenting p+ properties with uniform doping in the 1021 cm-3 region.
关键词： Selective area electron diffraction,Crystallisation,Emitter,Hot wire chemical vapour deposition,Silicon solar cells,Transmission electron microscopy
更新于2025-09-23 15:19:57