研究目的
Exploring hot wire chemical vapour deposition (HWCVD) as a method for growing boron-doped silicon for photovoltaic devices, focusing on improving deposition temperatures and film quality for solar cell applications.
研究成果
The study demonstrates that a more densely populated filament arrangement in HWCVD can increase deposition temperatures, improving film quality for photovoltaic applications. Post-deposition annealing enhances crystallinity, interfacial quality, and electrical characteristics, suggesting potential for solar cell emitters. Future work should focus on reducing carrier recombination with ultrathin passivating layers.
研究不足
The deposition temperature achieved with AFC-HWCVD, though improved, is insufficient for epitaxial growth, which requires temperatures exceeding 610 oC. The study also notes the trade-off between high doping concentration and increased Auger recombination.
1：Experimental Design and Method Selection:
The study employs HWCVD for boron-doped silicon film growth, comparing two filament configurations (NFC and AFC) to assess deposition temperature effects. A custom-built temperature measurement system is used to monitor deposition temperatures.
2：Sample Selection and Data Sources:
Boron-doped silicon films were deposited on 4" n-type wafers. Pre-deposition treatments included native oxide removal via hydrofluoric acid immersion.
3：List of Experimental Equipment and Materials:
Equipment includes a Nitor 301 HWCVD system, JEOL JEM-F200 electron microscope for TEM, Renishaw inVia confocal Raman microscope, Rigaku SmartLab diffractometer, and IONTOF ToF-SIMS 5 instrument for SIMS analysis.
4：Experimental Procedures and Operational Workflow:
The process involves intrinsic buffer layer deposition followed by boron-doped silicon growth, with post-deposition annealing. Characterization includes TEM, Raman spectroscopy, XRD, SIMS, and dark I-V measurements.
5：Data Analysis Methods:
Data analysis involves comparing deposition temperatures, film morphology via TEM, crystallinity via Raman and XRD, doping profiles via SIMS, and electrical characteristics via I-V measurements.
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