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Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror
摘要： The continuous wave operation of a gallium-nitride-based vertical-cavity surface-emitting laser (GaN-based VCSEL) that uses boron ion implantation for lateral current confinement and a curved mirror for lateral optical confinement was investigated. The threshold current was 0.25 mA (Jth = 3.5 kA cm?2) for a 3 μm diameter current aperture at room temperature and the lasing wavelength was 445.3 nm. This is the lowest threshold current recorded for a GaN-based VCSEL. This result is considered to be a milestone for the further miniaturization of GaN-based VCSELs by the implementation of lateral optical confinement due to the incorporation of a curved mirror.
关键词： continuous wave operation,threshold current,lateral optical confinement,GaN-based VCSEL,curved mirror
更新于2025-11-28 14:23:57
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Direct Imaging of Current‐Induced Transformation of a Perovskite/Electrode Interface
摘要： Formamidinium-lead-iodide (FAPbI3) perovskite films are subjected to a long-term action of the constant electrical current in the dark, using planar vacuum-deposited gold electrodes. The current-induced transformation is monitored by the time-of-flight secondary ion mass spectrometry (ToF-SIMS) mapping complemented by microscopic, spectroscopic methods, and X-ray diffraction. The migration of chemical species inside the lateral interelectrode gap is clearly visualized by ToF-SIMS. Those species correspond to both electrode material and perovskite itself, so that the perovskite/electrode interface becomes disrupted. As a result, the interelectrode gap shrinks, which is reflected in the surface images.
关键词： interfaces,dark current,gold electrodes,perovskites,ToF-SIMS mapping
更新于2025-11-25 10:30:42
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Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode
摘要： Inorganic perovskites have emerged as a promising candidate for light-emitting devices due to their high stability and tunable band gap. However, the power consumption and brightness have always been an issue for perovskite light-emitting diodes (PeLEDs). Here, we improved the luminescence intensity and decreased the current density of the PeLEDs based on CsPbI3 quantum dots (QDs) and p-type Si substrate through an alternating current (AC) driving mode. For the different driving voltage modes (under a sine pulsed bias or square pulsed bias), a frequency-dependent electroluminescent (EL) behavior was observed. The devices under a square pulsed bias present a stronger EL intensity under the same voltage due to less thermal degradation at the interface. The red PeLEDs under a square pulsed bias driving demonstrate that the EL intensity drop-off phenomenon was further improved, and the integrated EL intensity shows the almost linear increase with the increasing driving voltage above 8.5 V. Additionally, compared to the direct current (DC) driving mode, the red PeLEDs under the AC condition exhibit higher operating stability, which is mainly due to the reducing accumulated charges in the devices. Our work provides an effective approach for obtaining strong brightness, low power consumption, and high stability light-emitting devices, which will exert a profound in?uence on coupling LEDs with household power supplies directly.
关键词： low power consumption,perovskite quantum dots,silicon,light emitting diodes,alternating current driving
更新于2025-11-21 11:01:37
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Study of (AgxCu1a??x)2ZnSn(S,Se)4 monograins synthesized by molten salt method for solar cell applications
摘要： The open circuit voltage (VOC) deficit of Cu2ZnSn(S,Se)4 (CZTSSe) kesterite solar cells is higher than that of the closely related Cu(InGa)Se2 solar cells. One of the most promising strategies to overcome the large VOC deficit of kesterite solar cells is by reducing the recombination losses through appropriate cation substitution. In fact, replacing totally or partially Zn or Cu by an element with larger covalent radius one can significantly reduce the concentration of I–II antisite defects in the bulk. In this study, an investigation of the impact of partial substitution of Cu by Ag in CZTSSe solid solution monograins is presented. A detailed photoluminescence study is conducted on Ag-incorporated CZTSSe monograins and a radiative recombination model is proposed. The composition and structural quality of the monograins in dependence of the added Ag amount are characterized using Energy Dispersive X-ray Spectroscopy and X-Ray Diffraction method, respectively. The Ag-incorporated CZTSSe monograin solar cells are characterized by temperature dependent current-voltage and electron beam induced current methods. It was found, that low Ag contents (x ≤ 0.02) in CZTSSe lead to higher solar cell device efficiencies.
关键词： Copper zinc tin sulfur selenide,Monograins,Electron beam induced current,Photoluminescence,Kesterite,Cations substituation
更新于2025-11-21 10:59:37
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Effect of Dielectric Charging on Capacitance Change of an SOI Based CMUT
摘要： Effect of dielectric charging on the performance of SOI based Capacitive Micromachined Ultrasonic Transducers (CMUT) has been investigated. Measurements on an SOI based CMUT show that that the capacitance change as a function of DC bias is considerably higher than analytically calculated values. Investigation shows that this deviation in capacitance from analytically calculated values is due to the combined effects of different dielectric charging phenomena due to a strong electric field, trap charges in the SOI oxide layer, the charge motion associated with the leakage current through the buried oxide layer, and the air in the CMUT cavity. Additionally, this charging effect degrades the transduction efficiency as the induced polarization reduced the effective bias across the CMUT. It is concluded that the buried oxide (BOX) layers in SOI wafers are not suitable for use as dielectric spacers in electrostatic MEMS devices.
关键词： SOI,dielectric charging,Capacitance,microfabrication,MEMS,CMUT,leakage current
更新于2025-11-14 17:28:48
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Photovoltaic Properties and Series Resistance of <i>p</i> -Type Si/Intrinsic Si/ <i>n</i> -Type Nanocrystalline FeSi <sub/>2</sub> Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering
摘要： p-Type Si/intrinsic Si/n-type nanocrystalline iron disilicide heterojunctions were created by utilizing facing targets direct-current sputtering at the pressure of 1.33 × 10?1 Pa that investigated the photovoltaic properties. They exhibited a large leakage current and a small energy conversion ef?ciency of 0.62%. From using the method of Nicollian and Brews, the series resistance (Rs) values at zero bias voltage were 7.40 Ω at 2 MHz and 7.57 Ω at 50 kHz, respectively, which were in agreement with that estimated by the means of Norde. From applying the method of Hill-Coleman, the interface state density (Nss) values were 3.15 × 1015 cm?2 eV?1 at 50 kHz and 8.93 × 1013 cm?2 eV?1 at 2 MHz. The obtained results revealed the presence of Rs and Nss at the junction interface, which should be the potential cause of spoiled photovoltaic performance in the heterojunctions.
关键词： Heterojunctions,Facing-Targets Direct-Current Sputtering,Nanocrystalline Iron Disilicide,Series Resistance,Interface State Density
更新于2025-11-14 17:28:48
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Admittance of Organic LED Structures with an Emission YAK-203 Layer
摘要： The current-voltage characteristics and admittance of multilayer structures for organic LEDs based on the PEDOT:PSS/NPD/YAK-203/BCP system have been experimentally investigated in a wide range of the measurement conditions. It is shown that at voltages corresponding to the effective radiative recombination of charge carriers, a significant decrease in the differential capacitance of the structures is observed. The frequency dependences of the normalized conductance of LED structures are in good agreement with the results of numerical simulation in the framework of the equivalent circuit method. Changes in the frequency dependences of the admittance with a change in temperature are most pronounced in the temperature range of 200–300 K and less noticeable in the temperature range of 8–200 K. From the frequency dependences of the imaginary part of impedance, the charge carrier mobilities are found at various voltages and temperatures. The mobility values obtained by this method are somewhat lower than those determined by the transient electroluminescence method. The dependence of the mobility on the electric field is well approximated by a linear function. As the temperature decreases from 300 to 220 K, the mobility decreases several times.
关键词： frequency dependence of imaginary part of impedance,LED structure,current-voltage characteristic,transient electroluminescence,organic semiconductor,charge carrier mobility,method of equivalent circuits,admittance
更新于2025-11-14 17:28:48
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Assessment of Bulk and Interface Quality for Liquid Phase Crystallized Silicon on Glass
摘要： This paper reports on the electrical quality of liquid phase crystallized silicon (LPC-Si) on glass for thin-film solar cell applications. Spatially resolved methods such as light beam induced current (LBIC), microwave photoconductance decay (MWPCD) mapping, and electron backscatter diffraction were used to access the overall material quality, intra-grain quality, surface passivation, and grain boundary (GB) properties. LBIC line scans across GBs were fitted with a model to characterize the recombination behavior of GBs. According to MWPCD measurement, intra-grain bulk carrier lifetimes were estimated to be larger than 4.5 μs for n-type LPC-Si with a doping concentration in the order of 1016 cm?3. Low-angle GBs were found to be strongly recombination active and identified as highly defect-rich regions which spatially extend over a range of 40–60 μm and show a diffusion length of 0.4 μm. Based on absorber quality characterization, the influence of intra-grain quality, heterojunction interface, and GBs/dislocations on the cell performance were separately clarified based on two-dimensional (2-D)-device simulation and a diode model. High back surface recombination velocities of several 105 cm/s are needed to get the best match between simulated and measured open circuit voltage (Voc), indicating back surface passivation problem. The results showed that Voc losses are not only because of poor back surface passivation but also because of crystal defects such as GBs and dislocation.
关键词： Bulk lifetime,heterojunction,grain boundaries (GBs),two-dimensional (2-D)-device simulation,liquid phase crystallized silicon (LPC-Si),light beam induced current (LBIC)
更新于2025-11-14 15:25:21
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Analysis of a Fractal Josephson Junction with Unharmonic Current-Phase Relation
摘要： In this paper, a fractal Josephson junction with unharmonic current-phase relation is analytically and numerically analyzed. This system has two, four, or no equilibrium points depending on the external direct current source and unharmonic parameter. The stability analysis of the equilibrium points is carried out. The inclusion of unharmonic current-phase relation in an ideal Josephson junction leads to an increase in the hysteresis of current-voltage characteristics. While the inclusion of fractal characteristics in insulating layer of Josephson junction with harmonic current-phase relation leads to a decrease in the hysteresis of current-voltage characteristics. The inclusion of unharmonic current-phase relation on a fractal Josephson junction leads to an increase in the hysteresis of current-voltage characteristics. The dynamical behavior map of fractal Josephson junction with unharmonic current-phase relation in amplitude and frequency of modulation current plane is depicted. For a suitable choice of modulation parameters of external current source, fractal Josephson junction with unharmonic current-phase relation can exhibit excitable mode, bistable oscillatory mode, and periodic and chaotic behaviors.
关键词： Current-voltage characteristics,Unharmonic current-phase relation,Fractal Josephson junction,Bistability,Chaotic behavior,Hysteresis
更新于2025-09-23 15:23:52
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Current linearity and operation stability in Al <sub/>2</sub> O <sub/>3</sub> -gate AlGaN/GaN MOS high electron mobility transistors
摘要： To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of ID–VG curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance–voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.
关键词： current linearity,interface states,MOS-HEMT,AlGaN/GaN,operation stability,bias annealing
更新于2025-09-23 15:23:52