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Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors
摘要： With finite density of states and electrostatically tunable work function, graphene can function as a tunable contact for semiconductor channel to enable vertical field effect transistors (VFET). However, the overall performance, especially the output current density is still limited by the low conductance of the vertical semiconductor channel, as well as large series resistance of graphene electrode. To overcome these limitations, we construct a VFET by using single crystal InAs film as the high conductance vertical channel and self-aligned metal contact as the source-drain electrodes, resulting a record high current density over 45,000 A/cm2 at a low bias voltage of 1 V. Furthermore, we construct a device-level VFET model using resistor network method, and experimentally validate the impact of each geometry parameter on device performance. Importantly, we found the device performance is not only a function of intrinsic channel material, but also greatly influenced by device geometries and footprint. Our study not only pushes the performance limit of graphene VFETs, but also sheds light on van der Waals integration between two-dimensional material and conventional bulk material for high performance VFETs and circuits.
关键词： resistor network model,high current density,vertical transistor,graphene,van der Waals heterostructure,InAs film
更新于2025-09-23 15:23:52
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Temporal pulsed x-ray response of CdZnTe: In detector
摘要： The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78×109 photons mm?2·s?1. Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.
关键词： transient current,charge carrier,ultrafast-pulsed x-rays,CdZnTe
更新于2025-09-23 15:23:52
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Design and Simulation of Novel Gated Integrator for the Heavy ion Beam Monitors System
摘要： In this study, the objective is to realize a Gated Integrator (GI) circuit for silicon strip, Si(Li), CdZnTe and CsI detectors etc. With the development of radioactive ion beam physics, heavy-charged particles like carbon ions have been applied to the treatment of deep-seated inoperable tumors in the therapy terminal of the Heavy ion Research Facility in Lanzhou (HIRFL) located at the Institute of Modern Physics (IMP), Chinese Academy of Sciences (CAS). A high resolution current measurement circuit was developed to monitor the beam current at 1pA range. The circuit consisted of a low current high sensitivity I/V converter and gated integrator in an energy spectroscopy. A low offset voltage precision amplifier and new guarding and shielding techniques were used in the I/V converter circuit which allowed to measure low current. This paper will show a MOS switch configuration which is used to prevent leakage current and novel technique to compensate a charge injection in the reset switch.
关键词： Noise,Gated Integrator,Energy Spectroscopy,Leakage Current Prevention,Charge Injection
更新于2025-09-23 15:23:52
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An Improved Proposed Single Phase Transformerless Inverter with Leakage Current Elimination and Reactive Power Capability for PV Systems Application
摘要： Single-phase transformerless inverters are broadly studied in literature for residential-scale PV applications due to their great advantages in reducing system weight, cost and elevating system efficiency. The design of transformerless inverters is based on the galvanic isolation method to eliminate the generation of leakage current. Unfortunately, the use of the galvanic isolation method alone cannot achieve constant common mode voltage (CMV). Therefore, a complete elimination of leakage current cannot be achieved. In addition, modulation techniques of single-phase transformerless inverters are designed for the application of the unity power factor. Indeed, next-generation PV systems are required to support reactive power to enable connectivity to the utility grid. In this paper, a proposed single-phase transformerless inverter is modified with the clamping method to achieve constant CMV during all inverter operating modes. Furthermore, the modulation technique is modified by creating a new current path in the negative power region. As a result, a bidirectional current path is created in the negative power region to achieve reactive power generation. The simulation results show that the CMV is completely clamped at half the DC link voltage and the leakage current is almost completely eliminated. Furthermore, a reactive power generation is achieved with the modified modulation techniques. Additionally, the total harmonic distortion (THD) of the grid current with the conventional and a modified modulation technique is analyzed. The efficiency of the system is enhanced by using wide-bandgap (WBG) switching devices such as SiC MOSFET. It is observed that the efficiency of the system decreased with reactive power generation due to the bidirectional current path, which leads to increasing conduction losses.
关键词： leakage current,transformerless inverter,reactive power,wide-bandgap (WBG),silicon carbide (SiC),photovoltaic (PV) power system
更新于2025-09-23 15:23:52
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Length-Dependent Electronic Transport Properties of the ZnO Nanorod
摘要： The two-probe device of nanorod-coupled gold electrodes is constructed based on the triangular zinc oxide (ZnO) nanorod. The length-dependent electronic transport properties of the ZnO nanorod was studied by density functional theory (DFT) with the non-equilibrium Green’s function (NEGF). Our results show that the current of devices decreases with increasing length of the ZnO nanorod at the same bias voltage. Metal-like behavior for the short nanorod was observed under small bias voltage due to the interface state between gold and the ZnO nanorod. However, the influence of the interface on the device was negligible under the condition that the length of the ZnO nanorod increases. Moreover, the rectification behavior was observed for the longer ZnO nanorod, which was analyzed from the transmission spectra and molecular-projected self-consistent Hamiltonian (MPSH) states. Our results indicate that the ZnO nanorod would have potential applications in electronic-integrated devices.
关键词： current–voltage (I–V) curves,molecular-projected self-consistent Hamiltonian (MPSH),transport properties,zinc oxide (ZnO) nanorod,transmission spectrum
更新于2025-09-23 15:23:52
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Electrical Properties of Porous Silicon for N2 Gas Sensor
摘要： The application of porous silicon (PSi) for gas sensing devices has gained a considerable attention in the last decade. This work considers the electrical features of PSi layers prepared by electrochemical etching. We find that in order to get a better understanding of the absorption properties of PSi surface, it is necessary to know how the PSi morphology depends on the etching parameters. The physical structure of PSi, i.e., porosity, and pore size distribution can be controlled by changing the Hydrofluoric Acid concentration, current density, anodizing length and etching time in anodizing procedure. We describe our test system for gas sensors and investigate on the electrical behavior of PSi layers (p-type) in N2 gas for various fabrication conditions. The results show that the current density increases significantly as N2 gas is adsorbed. The measurements of the I-V characteristics were carried out at atmospheric pressure, room temperature, and with N2 gas as well.
关键词： Current-voltage curve,N2 gas,Porous silicon,Gas sensor
更新于2025-09-23 15:23:52
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New trends of gyrotron development at KIT: An overview on recent investigations
摘要： Since many years KIT is strongly involved in the development of high power gyrotrons for use in ECRH. KIT is pursuing two development lines: (i) the conventional, hollow cavity gyrotron and (ii) the coaxial cavity gyrotron. KIT is pushing conventional cavity gyrotrons from 1 MW to 1.5 MW in a common project with IPP Greifswald. Coaxial cavity technology having the advantage of higher power capability, in particular at higher frequency, is used for the 2 MW 170 GHz short-pulse prototype. This gyrotron is currently being upgraded to allow pulse extension up to approximately 100 ms and up to 1 s in a second step. For a future DEMOnstration fusion power plant two challenging trends with respect to gyrotron features are recognized: (a) the operating frequency will be above 200 GHz and (b) the requested total efficiency of the gyrotron should be higher than 60%. KIT is addressing these requirements by investigating both gyrotron technologies for their performance at a frequency well above 200 GHz. We started careful analysis of multi-staged-depressed collectors.
关键词： Electron-cyclotron-resonance heating and current drive,Gyrotron,Coaxial cavity,Magnetron injection gun
更新于2025-09-23 15:23:52
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Dark current in long-wave cascade-transport infrared up-converters
摘要： Reducing the dark current in an infrared (IR) photodetector is one of the most important aspects in improving the detector’s performance. This article attempts to clarify the dominant paths of dark current and reduce it in a long-wave cascade-transport IR up-converter (CIUP), which has been reported to be a potential candidate for very-large-scale IR detection/imaging. The four paths of the dark current are considered, including the ground state sequential tunneling, thermionic emission onto the continuum, thermally-assisted transition onto the excited state of the absorption quantum well (QW) or some energy levels in the transport region. Accordingly three designs of the band structure are proposed for long-wave CIUPs, with miniband-to-miniband intersubband transition, bound-to-miniband transition and step-bound-to-miniband transition. Samples based on these designs are fabricated and measured. Both the calculated electron concentration distributions and the measured dark currents show that the step-bound-to-miniband structure is the most effective in cutting down the dark current, in which the superlattice barrier and InGaAs absorption QWs help to reduce dark current related to tunneling, thermionic emission and thermally-assisted tunneling.
关键词： Dark current,Up-converter,Step-bound-to-miniband,Long-wave infrared,Cascade
更新于2025-09-23 15:23:52
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The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range
摘要： The reverse and forward bias I-V characteristics of the Al/p-YMO/p-Si/Al heterojunction were measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the I-V curves showed Schottky diode-like characteristics. The ideality factor and barrier height values were calculated as 0.81 and 2.62 from the forward bias I-V curve at room temperature (300 K), respectively. The YMO powder was prepared via solid state reaction technique. YMO thin films were grown on front surface of p-Si substrate by radio frequency (rf) magnetron sputtering using a polycrystalline YMO single target. The YMO thin film thickness on Si substrate was measured as ~70 nm via Dektak XT surface profilometer. The XRD, SEM, UV-Vis and XPS measurements of the YMO thin film were also performed. The bandgap energy of YMnO3 thin films was determined as 2.10 eV by UV-vis. The temperature-dependent reverse and forward bias I-V curves were evaluated in terms of thermionic emission (TE), Schottky emission, Fowler-Nordheim (F-N) tunneling and space charge-limited current (SCLC) current theories. Furthermore, it has been seen that the forward bias conduction in the junction at each temperature obeys F-N tunneling because of the linearity in the ln (I/V2) versus V-1 curves.
关键词： Polycrystalline,Heterojunction,Ferroelectric,Al/p-YMO/p-Si/Al,Schottky barrier,YMnO3,Temperature dependent current characteristics
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP) - Auckland (2018.8.5-2018.8.8)] 2018 IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP) - Performance Enhancement Of Cmos Terahertz Detector
摘要： For improving the performance of CMOS terahertz detectors, parasitic capacitance reduction technique and new working model are proposed for MOSFET devices. We investigate the influence of source parasitic capacitance and drain-to-source current on the performance of CMOS terahertz detectors and analyze the relationship to the voltage responsivity (RV) and noise equivalent power (NEP) of detectors. Experiment on the CMOS detectors with a 650GHz antenna shows the maximum improvement of voltage responsivity can attain to 155% by suppressing gate-source parasitic capacitance. The additional drain current Ids can further increase RV while NEP remains unchanged.
关键词： Antenna,CMOS THz detectors,DC current,Voltage response
更新于2025-09-23 15:23:52