- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Current-Fed Quasi Z-Source Inverter Based PV Distributed Generation Controller
摘要： Recently, the renewable photovoltaic distributed generation (PV-DG) enjoys a rapid growth globally due to the advancement in solar systems and power electronics technologies. However, the intermittent nature of solar radiation and performance of the attached power converters, inevitably poses some challenges to the power grids integrated large-scale solar-farms (SF). These challenges include frequency oscillations, voltage variation and power quality issues. To overcome these problems, this study proposes a Current-Fed quasi Z-source Inverter (CF-qZSI) as an alternative converter for distribution generation controllers to facilitate the integration of a PV energy source into a weak power system. The detailed model of the CF-qZSI-based distribution controller (CqZDC) and its control system are developed. The dynamic performance of the CqZDC device is evaluated to validate different objectives using an actual field data and RTDS simulation platform.
关键词： frequency stability,current source inverter,wide band gap devices,Accommodation of renewable energy resources,power quality improving,facilitating of distributed electricity generations
更新于2025-09-23 15:23:52
-
Silicon carbide nanowire field effect transistors with high on/off current ratio
摘要： We report the important performance parameters of SiC-NWFET devices including on/off current ratio (Ion/Ioff), gating effect, transconductance (gm), and carrier mobility (μh). The channel length dependence of these key performance parameters of the SiC-NWFETs with varying channel lengths ranging from 120 nm to 1.5 μm has been demonstrated. The device with the 120 nm channel length has led to a very high on/off current ratio (1.34 × 10^4) and very strong gating effect. Furthermore, the transconductance and the hole mobility have been determined as 6.9 nS and 1.696 cm2/V·s, respectively, at Vds of 0.05 V. This study shows good promise of the SiC-NWFET devices to be used in advanced solid-state nanoelectronic devices capable of operating at high frequency and high temperature.
关键词： On/off current ratio,Transconductance,Gating effect,SiC-NWFETs
更新于2025-09-23 15:23:52
-
[IEEE 2018 IEEE ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP) - Hiroshima (2018.5.27-2018.6.1)] 2018 IEEE ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP) - Control of Leakage Current through BaTiO<inf>3</inf> Film by Cumulative Cycle of Applied Voltage Scanning for ReRAM or Neuromorphic Application
摘要： We found a new phenomenon that shows a large change in leakage current through BaTiO3 (BTO) film with the maximum ratio of 107 to 109 observed in this work by changing cumulative cycle of voltage scan applied on the film capacitor. These leakage phenomena are thought to depend on several factors such as BTO film thickness, concentration of Vo+, bias voltage, its sweep rate and so on, because trapping/detrapping of carrier electron into/from oxygen vacancy would be a competition dependent on their rates and concentrations. These results imply that the leakage current can be controlled by some sequences or protocols of applied voltage scan, leading to use for ReRAM or neuromorphic applications.
关键词： ReRAM,leakage current,resistive switching,BaTiO3,oxygen vacancy
更新于2025-09-23 15:23:52
-
[IEEE 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) - Stockholm, Sweden (2018.9.26-2018.9.28)] 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) - Structural analysis and modelling of packaged light emitting devices by thermal transient measurements at multiple boundaries
摘要： The paper presents a comprehensive methodology for modeling the electrical, optical, and thermal domains of high-power LEDs, focusing on the XPE2 type from Cree. It introduces optimization algorithms (OPT1 and OPT2) to extract parameters such as series resistance (RS), ideality factor (m), and saturation current (I0) from forward voltage (VF) measurements. A quadratic model for radiant voltage (Vrad) is developed to describe the optical output, and thermal modeling is addressed through structure functions derived from transient thermal measurements. The approach enables accurate prediction of LED performance across varying currents and temperatures, with applications in thermal management and design optimization.
关键词： ideality factor,thermal management,structure function,LED modeling,radiant flux,forward voltage,saturation current,series resistance
更新于2025-09-23 15:23:52
-
AR aided Smart Sensing for In-line Condition Monitoring of IGBT Wafer
摘要： This paper describes an augmented reality (AR) aided smart sensing technique, for in-line condition monitoring of IGBT wafers. A series of signal processing algorithms are applied for enabling sensor intelligence. Based on electromagnetic infrared-visible-fusion (IVF), a supplementary palpable 3-D thermography layer is integrated with an IGBT wafer in real world environment. Before the IVF, independent component analysis (ICA) is implemented to identify defects in the wafer. The proposed AR aided smart sensing technique enhances user's perception and interaction between the industrial systems and the surrounding world. In contrast to conventional sensor techniques, it provides a non-destructive testing and evaluation (NDT&E) based high-throughput in-line condition monitoring method. The advantages of non-contact and time efficient of this smart sensing technique potentially bring huge benefit to yield management and production efficiency. AR aided smart sensing can improve the productivity, quality and reliability of power electronic materials and devices, as well as in other industrial applications.
关键词： Wafers,IGBT,Thermography,Non-destructive testing,Pulsed Eddy Current,Augmented Reality,Smart sensing
更新于2025-09-23 15:23:52
-
An Efficient Technique using Modified p-q Theory for Controlling Power Flow in a Single-Stage Single-Phase Grid-Connected PV System
摘要： In this paper, an efficient power conditioning unit (PCU) is presented for a single-phase grid-connected photovoltaic system (GCPVS) incorporating both maximum power-point tracking (MPPT) and current control algorithms in a single-stage. Modified p-q theory is applied to derive the reference signal for a hysteresis band current (HBC) controller so that independently the active and reactive power sharing between the photovoltaic (PV) system and the grid can be controlled. Enhanced stability during the internal dynamics, caused by the variations in PV generation and load conditions, is the prime aspect of the controller. The performance of the proposed p-q theory correlated HBC controller is evaluated against tracking of maximum PV power and compensation of load reactive power under the changeable atmospheric and load conditions, and also compared with the widely used conventional proportional resonant (PR) controller to justify superiority. Simulation and experiment are carried-out under variable weather and different load conditions to validate acceptability of the proposed control scheme.
关键词： modified p-q theory,Single-stage,hysteresis band current (HBC) controller,grid-connected photovoltaic system (GCPVS),power flow controlling
更新于2025-09-23 15:23:52
-
[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Elimination of the Hump Current of P-Channel Polycrystalline Silicon Thin-Film Transistor After Positive Bias Stress
摘要： The stability of p-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) under positive bias stress (PBS) is investigated in this paper. Interestingly, it is observed that the transfer curves show different degradation phenomena from the previous reports, i.e., the threshold voltage (Vth) shifts to the negative gate bias direction, and the hump current in the subthreshold region clearly shrinks with the increase of the stress time, and finally disappears under the PBS, which is explained by the creation and accumulation of positive charges in the gate oxide. It is also observed that the hump current in p-channel TFTs is eliminated at a higher temperature and one possible mechanism for the appearance of hump current is proposed.
关键词： thin-film transistors,positive bias stress (PBS),hump current,p-channel
更新于2025-09-23 15:23:52
-
A 600V PiN diode with partial recessed anode and double-side Schottky engineering for fast reverse recovery
摘要： In this paper, a novel 600V PiN diode for fast recovery is proposed and the operation mechanism as well as the high dynamic ruggedness of the device are analyzed in detail. The proposed structure features the alternating P/N region with partial recessed P region at anode side and the P- Schottky as well as the N Schottky contacts at both sides. In on-state, the carrier injection efficiency can be modulated by adjusting the work function of the anode P- Schottky contact (WSA), which is based on MSC (Metal-Semiconductor-Contacts) concept. As a result, the fast recovery is realized due to the reduced amount of the stored carriers and the shortened carrier extraction path. In off-state, the leakage current can be effectively suppressed attributed to the rapid pinch-off of the depletion layer. The forward voltage drop (VF) and the reverse recovery time (trr) of the proposed structure can be adjusted by changing the depth of the P- Schottky contact (tra) on the sidewall, without sacrificing the breakdown voltage (BV). The proposed structure achieves a trr of 75ns which is 45.7% and 33% lower than that of the conventional PiN and the MPS structure at the same VF of 0.965V, respectively. Moreover, the total amount of holes in the N buffer layer can be supplemented by adjusting the work function of the cathode N Schottky contact (WSC) during reverse recovery, resulting in a high-dynamic ruggedness with suppressed voltage oscillation and voltage overshoot.
关键词： Schottky contact,leakage current,dynamic characteristics,PiN diode,voltage overshoot,reverse recovery
更新于2025-09-23 15:23:52
-
Beam steering characteristics of highly directive photoconductive dipole phased array antenna for terahertz imaging application
摘要： In this paper, the beam-steering characteristics of photoconductive dipole phased array antenna configuration at 1.95 THz is presented. The proposed array antenna configuration with frequency selective surface favourably improves its gain and directivity which is useful to upsurge the imaging capabilities to address the deliberations such as limited depth-of-field (DoF) and size-weight-and-power of the THz source for imaging applications. These are important considerations for applications like stand-off imaging and surveillance of moving targets where the high angular resolution as well as extended DoF are the important parameters for successful detection of concealed explosives. The projected planar profile and compact highly directive (2 × 2) small-gap photoconductive dipole phased array antenna can be castoff for the exposure of concealed explosives such as RDX, TNT, and HMX which illustrate their substantial spectral absorption fingerprints in terahertz (1.4–2.2 THz) regime of the spectrum. A simple method of beam-steering has been explored based on phase controlled optical excitation of highly directive small-gap photoconductive dipole array antenna. Further, the effects of uniform progressive phase shift on the beam-steering of uniform linear array (along x-axis) as well as planar array (x-axis and y-axis) is investigated.
关键词： Terahertz frequency,Uniform current distribution,Photoconductive dipole antenna,Phased array,Frequency selective surface
更新于2025-09-23 15:23:52
-
Switchable Schottky contacts: Simultaneously enhanced output current and reduced leakage current
摘要： Metal-semiconductor contacts are key components of nanoelectronics and atomic-scale integrated circuits. In these components Schottky diodes provide a low forward voltage and a very fast switching rate but suffer the drawback of a high reverse leakage current. Improvement of the reverse bias characteristics without degrading performance of the diode at positive voltages is deemed physically impossible for conventional silicon-based Schottky diodes. However, in this work we propose that this design challenge can be overcome in the organic-based diodes by utilizing reversible transitions between distinct adsorption states of organic molecules on metal surfaces. Motivated by previous experimental observations of controllable adsorption conformations of anthradithiophene on Cu(111), herein we use density functional theory simulations to demonstrate the distinct Schottky barrier heights of the two adsorption states. The higher Schottky barrier of the reverse bias induced by chemisorbed state results in low leakage current; while the lower barrier of the forward bias induced by physisorbed state yields a larger output current. The rectifying behaviors are further supported by nonequilibrium Green's function transport calculations.
关键词： van der Waals forces,Schottky contacts,Schottky barrier height,reverse leakage current,bistable state
更新于2025-09-23 15:23:52