- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Fabrication of Nano-Structured V-Shaped Grooves on B-Si Wafer for On-Board Spaceborne Blackbody System
摘要： Nano-structured V-shaped grooves on the black-silicon (B-Si) was fabricated to improve the optical emissivity for on-board spaceborne blackbody system. The deep reactive ion etching (DRIE) process was used to fabricate the V-shaped grooves on the B-Si wafer according to the etching conditions. The scanning electron microscopy (SEM) and infrared (IR) spectroscopy were used to evaluate the morphology, aspect ratio, and reflectance of the fabricated B-Si specimen. The surface of the B-Si was successfully structured with the nano-scale V-shaped grooves of which the height and diameter were approximately 670 nm and 200 nm, respectively. The reflectance of the B-Si was close to zero in a wavelength less than 1 μm. As a result, the fabricated B-Si with the nano-structured V-shaped grooves was suitable to the blackbody target for on-board spaceborne blackbody system.
关键词： On-Board Calibration,V-Shaped Groove,DRIE Process,Blackbody,Black Silicon
更新于2025-09-23 15:22:29
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Micromachined Waveguide Interposer for the Characterization of Multi-port Sub-THz Devices
摘要： This paper reports for the first time on a micromachined interposer platform for characterizing highly miniaturized multi-port sub-THz waveguide components. The reduced size of such devices does often not allow to connect them to conventional waveguide flanges. We demonstrate the micromachined interposer concept by characterizing a miniaturized, three-port, 220–330-GHz turnstile orthomode transducer. The interposer contains low-loss micromachined waveguides for routing the ports of the device under test to standard waveguide flanges and integrated micromachined matched loads for terminating the unused ports. In addition to the interposer, the measurement setup consists of a micromachined square-to-rectangular waveguide transition. These two devices enable the characterization of such a complex microwave component in four different configurations with a standard two-port measurement setup. In addition, the design of the interposer allows for independent characterization of its sub-components and, thus, for accurate de-embedding from the measured data, as demonstrated in this paper. The measurement setup can be custom-designed for each silicon micromachined device under test and co-fabricated in the same wafer due to the batch nature of this process. The solution presented here avoids the need of CNC-milled test-fixtures or waveguide pieces that deteriorate the performance of the device under test and reduce the measurement accuracy.
关键词： Test-fixture,Orthomode transducer,Terahertz,Multi-port,Measurement,Interposer,Silicon micromachining,Waveguide,DRIE
更新于2025-09-16 10:30:52
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Compact silicon-micromachined wideband 220-330 GHz turnstile orthomode transducer
摘要： This paper reports on a turnstile-junction orthomode transducer (OMT) implemented by silicon micromachining in the 220 – 330 GHz band. Turnstile OMTs are very wideband and allow for co-planar ports, but require accurate and complex geometries which makes their fabrication challenging at higher frequencies. The compact 10 x10 x0.9 mm3 OMT-chip presented in this paper is the first micromachined full-band OMT in any frequency range, and only the second turnstile OMT implemented above 110 GHz. The measured insertion loss (0.3 dB average, 0.6 dB worst-case) and the cross-polarization (60 dB average, 30 dB worst-case) over the whole waveguide band represent the best performance of any wideband OMT, regardless of design or fabrication technology, in the 220 – 330 GHz band. The return loss with 22 dB average (16 dB worst-case) is comparable or better than previous work. The paper discusses design considerations and compromises of this complex 9 layer silicon micromachined device, including the influence of sidewall slopes, underetching, and post-bonding misalignment between the chips. It is shown that for a device which is very sensitive to geometrical variations, such as a turnstile OMT, it is necessary to anticipate and compensate for any fabrication imperfections in the design to achieve high RF performance.
关键词： terahertz,mmW,DRIE,orthomode transducer,turnstile,silicon micromachining,THz,millimeter wave,MEMS,OMT
更新于2025-09-11 14:15:04
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Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon
摘要： This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be etched in a silicon substrate through a mesh mask. In the same single etching step, multidimensional microchannels with various dimensions (width, length, and depth) can be obtained by tuning the process and design parameters. These fully embedded structures enable further wafer processing and integration of electronic components like sensors and actuators in wafers with microchannels.
关键词： mesh mask,HAR,single-step DRIE (Bosch process),embedded microchannel
更新于2025-09-09 09:28:46