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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Dependence of Characteristics of Directly-Bonded SiC/Si Junctions on Bonding Temperature
摘要： We measure electrical characteristics and die shear strength of directly-bonded n-4H-SiC/p+-Si junction with emphasis on their dependence on the annealing condition during bonding. In the bonding process, we perform lower-temperature annealing at the first step and higher-temperature one at the second step. By increasing annealing temperature at the first step, the impurity concentration obtained by C-V measurement gets close to the impurity concentration of SiC and the bonding strength become larger. These results show that directly-bonded SiC/Si junction characteristics depend on the annealing temperature at the first (lower-temperature) step in the bonding process.
关键词： direct bonding,surface treatment,Si,SiC,annealing
更新于2025-09-23 15:22:29
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A facile method for direct bonding of single-crystalline SiC to Si, SiO2, and glass using VUV irradiation
摘要： Single-crystalline silicon carbide is an attractive material for power electronics. However, it is difficult to achieve the direct bonding of SiC to conventional Si-based materials (e.g., Si, SiO2, and glass) due to the large mismatch in coefficients of thermal expansion and lattice constants. To solve the bottleneck, we present a facile direct bonding method using vacuum ultraviolet (VUV) surface irradiation for a robust combination of SiC to Si, SiO2, and glass at low temperatures (≤ 200 oC). The mechanisms behind the VUV-irradiated bonding of SiC to Si-based materials were also investigated. According to surface characterizations, VUV irradiation can lead to smooth and hydrophilic surfaces, which are beneficial for direct bonding in humid air. The tight and defect-free SiC/Si, SiC/SiO2 and SiC/glass bonding interfaces were confirmed by transmission electron microscopy. In particular, the enriched carbon transition layers were formed on the side of silicon carbide because of the oxidation and sputtering of Si atoms during VUV irradiation. This will possibly improve the bonding interfaces and contribute to the enhanced bonding strengths. Moreover, the SiC/glass bonded pair exhibited relatively high optical transparency in the UV-Vis range. Therefore, the direct bonding of single-crystalline SiC and heterostructure Si-based materials offers great potentials for high-performance power electronics, as well as micro/nanofluidic devices.
关键词： direct bonding,vacuum ultraviolet,interface,silicon carbide
更新于2025-09-23 15:21:21
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Collective Die Direct Bonding for Photonic on Silicon
摘要： Optoelectronic devices usually needs heterostructure integration with III/V devices integrated on silicon circuits. As throughput placement are more important than placement precision, collective die to wafer bonding is an interesting process for these applications. Moreover as light should be propagated through the bonding interface, minimizing interfacial material is mandatory. Collective direct bonding of die to wafer is then proposed. The bonding yield as well as the first placement accuracy is evaluated.
关键词： III/V integration,Collective Die Direct Bonding,Silicon Photonics,Photonic on Silicon
更新于2025-09-23 15:21:21
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<i>(Invited)</i> Water Transport Along Si/Si Direct Wafer Bonding Interfaces
摘要： The transport of water in a highly confined gap made by the direct bonding of low roughness silicon hydrophilic wafers is studied. We derive the equation for the transport of water from chemical potential gradients, using Stokes and conservation equations. The transport equation is found to be a Porous Medium Equation with exponent 2. A solution for this equation with stepwise boundary conditions is given. The model is tested against different initial conditions for inward and outward flow, and different temperatures and humidity levels.
关键词： silicon direct bonding,chemical potential gradients,Porous Medium Equation,water transport,hydrophilic wafers
更新于2025-09-10 09:29:36
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[IEEE 2018 7th Electronic System-Integration Technology Conference (ESTC) - Dresden, Germany (2018.9.18-2018.9.21)] 2018 7th Electronic System-Integration Technology Conference (ESTC) - UV Assisted Chip-on-Wafer Direct Transfer Bonding (CoW DTB)
摘要： Chip-on-Wafer Direct Transfer Bonding (CoW DTB) technology employing a UV assisted chip transfer mechanism for the high-accuracy direct bonding application including III-V/Si, 2.5D/3D/Fan-Out integration was proposed. Basic experiments of the chip transfer process using the glass bond tool, which enables pressing the backside of the chips through the carrier sheet and UV irradiation to a UV peeling-type adhesive layer, were conducted. The experimental results show this novel process achieved stable chip transfer by optimizing the carrier sheet, glass bond tool design, and parameters such as UV irradiation intensity and time.
关键词： Oxide Bonding,III-V/Si,Chip-on-Wafer (CoW),Direct Bonding,Three-dimensional Integrated Circuit (3DIC),Fan-Out (FO)
更新于2025-09-04 15:30:14
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Optical bonding of tellurite glass film on silicate glass
摘要： Tellurite glass thin film was successfully bonded on a silicate glass substrate by the direct bonding (DB) method. Glass film (thickness 1-3 μm) was fabricated by the glass blowing technique and the DB process was performed at room temperature at relative humidity (RH) of 62% or 15%. The surface adhesive strengths of the glass films bonded at 15% and 62% RH were measured as 250 and 96 mJ/m2 respectively by the Obreimoff-Metsik method. The hydroxyl (-OH) functional groups on the interface between the film and silicate glass were analyzed by Fourier transform infrared spectroscopy. The major bonding forces between the tellurite thin film and silicate glass were hydrogen bonds at 62% RH and bonds between Te on the tellurite glass and O on the silicate glass were concerned at 15% RH. These forces, contributed by Si-OH, were important for bond formation at 62%. The large amounts of water and OH groups on the silicate glass, determined by thermogravimetric analysis, indicated a weaker bonding process at 62% RH. This work will contribute toward reliable, high-integrity components for integrated optical circuits, which are increasingly needed for high-throughput data transfer.
关键词： glass thin film,tellurite glass,hydroxyl group,adhesive strength,direct bonding
更新于2025-09-04 15:30:14