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Excimer laser annealing method for achieving low electrical resistivity and high work function in transparent conductive amorphous In2O3:Zn films on a polyethylene terephthalate substrate
摘要： We have developed an excimer laser annealing method to achieve low electrical resistivity (ρ) and a high work function in amorphous In2O3:Zn (IZO) films on polyethylene terephthalate (PET) substrates. The effect of excimer laser irradiation of the films on crack formation, electrical properties (ρ, carrier concentration, and Hall mobility), and work function were investigated. KrF excimer laser irradiation produced cracks in the surface of the IZO films on PET as a result of thermal expansion of the PET substrate. By inserting an amorphous SiO2 layer as a heat barrier between the IZO layer and PET substrate, crack formation was prevented. Moreover, it was found that the work function of IZO film could be controlled by the laser fluence and repetition rate. Irradiation of a 150-nm-thick amorphous IZO film on a SiO2-coated PET substrate achieved a low ρ of 3.55 × 10?4 Ω cm and a high work function of 5.4 eV due to the reduction of oxygen and carbon while maintaining a flat surface.
关键词： Excimer laser annealing,Work function control,Buffer layer,Transparent conducting oxide
更新于2025-09-19 17:13:59
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Laser induced ultrafast combustion synthesis of solution-based AlO <sub/>x</sub> for thin film transistors
摘要： Solution processing of amorphous metal oxides using excimer laser annealing (ELA) has been lately used as a viable option to implement large-area electronics, offering high quality materials at a reduced associated cost and process time. However, the research has been focused on semiconductor and transparent conductive oxide layers rather than on the insulator layer. In this work we present amorphous aluminum oxide (AlOx) thin films produced at low temperature (≤150 °C) via combustion synthesis triggered by ELA, for oxide thin film transistors (TFTs) suitable for manufacturing flexible electronics. The study showed that combining ELA and combustion synthesis leads to an improvement in the dielectric thin film’s densification in a shorter time (≤15 min). Optimized dielectric layers were obtained combining a short drying cycle at 150 °C followed by ELA treatment. High breakdown voltage (4 MV cm?1) and optimal dielectric constant (9) was attained. In general, TFT devices comprising the AlOx fabricated with a drying cycle of 15 min followed by ELA presented great TFT properties, a high saturation mobility (20.4 ± 0.9 cm2 V?1 s?1), a small subthreshold slope (0.10 ± 0.01 V dec?1) and a turn-on voltage ≈0 V. ELA is shown to provide excellent quality solution-based high-k AlOx dielectric, that surpass other methods, like hot plate annealing and deep ultraviolet (DUV) curing. The results achieved are promising and expected to be of high value to the printed electronic industry due to the ultra-fast film densification and the surface/area selective nature of ELA.
关键词： thin film transistors,excimer laser annealing,solution processing,amorphous metal oxides,combustion synthesis,flexible electronics
更新于2025-09-19 17:13:59
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[IEEE 2019 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC) - Taiyuan, China (2019.7.18-2019.7.21)] 2019 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC) - High Performance Germanium n <sup>+</sup> /p Shallow Junction for nano-Scaled n-MOSFET
摘要： In this work, we study excimer laser annealing (ELA) on phosphorus-implanted germanium with implantation energies and doses of 30 keV, 5x1015 cm-2, and 10 keV, 5x1014 cm-2, respectively. A lower specific contact resistivity of Al/n+Ge and better performance of Ge n+/p diode than that obtained by rapid thermal annealing have been fulfilled. Moreover, by a combination of low temperature pre-annealing (LTPA) and ELA, we achieved a Ge n+/p diode with a rectification ratio of about 107 and decreased phosphorus diffusion in Ge during ELA. A increased activation concentration up to 6x1019cm-3 with a high activation ratio about 85% of phosphorus have been achieved in a low ion implanted dose and energy.
关键词： low temperature pre-annealing,excimer laser annealing,germanium,shallow junction
更新于2025-09-11 14:15:04