研究目的
To develop an excimer laser annealing method for achieving low electrical resistivity and high work function in transparent conductive amorphous In2O3:Zn films on a polyethylene terephthalate substrate.
研究成果
The study successfully developed an excimer laser annealing technique to achieve low electrical resistivity and high work function in amorphous IZO films on PET substrates. The insertion of an amorphous SiO2 layer as a heat barrier prevented crack formation, enabling the control of electrical properties and work function through laser fluence and repetition rate adjustments.
研究不足
The study was limited by the generation of cracks in the IZO films due to thermal expansion of the PET substrate under laser irradiation, which was mitigated by inserting an amorphous SiO2 layer as a heat barrier.
1：Experimental Design and Method Selection:
The study investigated the effects of KrF excimer laser irradiation on amorphous IZO films deposited on PET substrates, focusing on crack formation, electrical properties, and work function.
2：Sample Selection and Data Sources:
Commercially available DC-magnetron-sputtered amorphous 150-nm-thick IZO thin films on 150-nm-thick SiO2-coated or uncoated PET substrates were used.
3：List of Experimental Equipment and Materials:
KrF excimer laser (λ = 248 nm; COMPex, Coherent Inc.), Hall effect measurements (Resi Test 8300, Toyo Corporation), X-ray diffraction (XRD) system (SmartLab, Rigaku), optical microscopy (VH-Z100R, Keyence), field-emission scanning electron microscopy (FESEM; Hitachi, SU9000), UV photoelectron spectroscopy (AC-2, Riken Keiki), X-ray photoelectron spectroscopy (XPS) system (PHI5000-VersaProbe, ULVAC-PHI Inc.).
4：Experimental Procedures and Operational Workflow:
Excimer laser irradiation was performed in air at room temperature with varying fluences and repetition rates. Electrical properties, crystallographic textures, surface morphology, and work function were characterized post-irradiation.
5：Data Analysis Methods:
The electrical properties were determined by Hall effect measurements, crystallographic textures by XRD, surface morphology by optical microscopy and FESEM, and work function by UV photoelectron spectroscopy.
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KrF excimer laser
COMPex
Coherent Inc.
Used for annealing amorphous IZO films to achieve low electrical resistivity and high work function.
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X-ray diffraction (XRD) system
SmartLab
Rigaku
Used to characterize the crystallographic textures of the IZO films.
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Field-emission scanning electron microscopy (FESEM)
SU9000
Hitachi
Used to evaluate the microscopic morphologies of the samples.
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Hall effect measurements
Resi Test 8300
Toyo Corporation
Used to determine the electrical properties (ρ, carrier concentration, and Hall mobility) of the IZO films.
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Optical microscopy
VH-Z100R
Keyence
Used to characterize the surface morphology of the IZO films.
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UV photoelectron spectroscopy
AC-2
Riken Keiki
Used to measure the work function of the IZO films.
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X-ray photoelectron spectroscopy (XPS) system
PHI5000-VersaProbe
ULVAC-PHI Inc.
Used to perform XPS measurements on the IZO films.
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