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Graphene foam field-effect transistor for ultra-sensitive label-free detection of ATP
摘要： As the major energy molecule of cells, adenosine triphosphate (ATP) regulates various biological processes and has been found to be closely related to many diseases. Therefore, ATP detection in trace amounts is very useful for understanding various biological processes, studying cellular events such as proliferation and apoptosis, and estimating contaminated degree of food and medical instrument. To date, the trace sensing ATP at picomolar level in biological systems is still a major challenge. Because of unique electrical and structural properties, graphene has attracted much attention in biosensing applications. Here, a sensitive and selective graphene foam field-effect transistor (GF-FET) biosensor for ATP detection is demonstrated. The lowest detection limit of the biosensors for analyzing ATP is down to 0.5 pM, which is one or several orders lower than the reported results. Moreover, the GF-FET biosensor show a good linear current response to ATP concentrations in a broad range from 0.5 pM to 50 μM. The GF-FET sensor surface can be regenerated for many times and used for up to weeks without significant loss of functionality. Based on this sensing platform, label-free measurements of ATP concentrations in human serum as well as in cell lysate are demonstrated. The work may provide a novel platform to study ATP release and energy-regulated biological processes, suggesting a promising future for biosensing applications.
关键词： FET,ATP,Graphene foams
更新于2025-09-23 15:23:52
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[IEEE 2018 AEIT International Annual Conference - Bari, Italy (2018.10.3-2018.10.5)] 2018 AEIT International Annual Conference - Solid State Rectifier as Terahertz Detector
摘要： We present a new solid state rectifier, compatible with CMOS integrated circuit, suitable to direct conversion of terahertz radiation, at room temperature. The structure creates a rectenna, consists in a truncated conical helix extruded from a planar spiral and connected to a nanometric metallic whisker at one of its edges. The whisker reaches the gate of a MOS-FET transistor. Rectification can be obtained by the self-mixing effect occurring into the plasma waves generate underneath the gate. The proposed solution is easy to integrate with existing imaging systems. No need of scaling toward very scaled and costly technological node is required, since the plasma wave are not dependent on the gate extension. The remaining electronics should only provide the necessary integrated readout. A theoretical explanation of the self-mixing process, and TCAD simulations showing the onset of the DC potential are presented. An additional detector structure, the double barrier rectifier, is also presented for comparison.
关键词： MOS-FET,rectifying antenna (rectenna),Image detector,CMOS,THz antennas
更新于2025-09-23 15:23:52
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[IEEE 2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES) - Gdynia, Poland (2018.6.21-2018.6.23)] 2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES) - Study of Wireless Communications Link at Subterahertz Frequencies Using FET-based Detectors
摘要： This paper focuses on the wireless link development deploying (sub)THz waves. The article describes authors’ initial approach to the research and experiments dealing with THz communications. Presented work summarises the theory and achieved results in a ?led of FET-based THz detectors and readout circuits aimed at wireless THz data transmission. Our main goal was to provide proper data transmission utilising (sub)THz carrier wave — this has been experimentally achieved at 170 GHz and 289 GHz.
关键词： THz,data transmission,FET-based detectors,wireless communications
更新于2025-09-23 15:23:52
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Electrical contacts to two-dimensional transition-metal dichalcogenides
摘要： Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted enormous interests as the novel channel materials for atomically thin transistors. Despite considerable progress in recent years, the transistor performance is largely limited by the excessive contact resistance at the source/drain interface. In this review, a summary of recent progress on improving electrical contact to TMDC transistors is presented. Several important strategies including topology of contacts, choice of metals and interface engineering are discussed.
关键词： Fin-FET,channel materials,two-dimension
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Conference on RFID Technology & Application (RFID-TA) - Macau, Macao (2018.9.26-2018.9.28)] 2018 IEEE International Conference on RFID Technology & Application (RFID-TA) - Auditing of Ultra Dense RFID Straws in Cryogenic Container at -196°C
摘要： This paper presents a new auditing system scheme for cryopreservation based on radio frequency identification (RFID) at temperature of -196 oC. Conventional approaches such as hand written labels or printed barcodes suffer from the significant manual labor work and freeze-thaw-damaging risk of the sample. The proposed scheme integrates miniaturized RFID electronic devices and antennas in the thin cryogenic straws without significantly changing their dimensions. In addition, 900 MHz frequency band is chosen for long reading range, which eliminates the need to take the preserved biological samples out of liquid nitrogen and minimizes the damaging risk. Four most important technical aspects for the system have been identified and investigated: 1. The link budget is evaluated by FDTD numerical simulations to make sure the RF signal strength meets the requirement for the reading range. 2. The total efficiency of small and tightly coupled RFID dipole antennas is studied and obtained by simulations. 3. The current-voltage behaviors of two types of transistors in typical RFID electronics have been characterized by measurements to identify the suitable transistor type for reliable circuit designs at -196 oC. 4. The easy-to-access and anti-collision reading system for fast data collection is analyzed. The obtained results indicate that the proposed scheme is feasible, which can be beneficial for the relevant scientific fields.
关键词： coupling,FET,cryopreservation,RFID,antennas
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Electron-only explicit screening quantum transport model for semiconductor nanodevices
摘要： State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants. This work exemplifies the large variability of different charge interpretation models when applied to ultrathin body transistor performance predictions. To solve this modeling challenge, an electron-only band structure model is extended to atomistic quantum transport. Performance predictions of MOSFETs and tunneling FETs confirm the generality of the new model and its independence of additional screening models.
关键词： tunneling FET,Electron-only,ultrathin body transistor,NEGF
更新于2025-09-23 15:22:29
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Multiphysics Simulation of Biosensors Involving 3D Biological Reaction-Diffusion Phenomena in a Standard Circuit EDA Environment
摘要： The topic of this paper is the development of biological models for 3D reaction–diffusion phenomena that can be used in any circuit electronic design automation environment for the simulation of biosensors. Biological systems that involve such 3D phenomena are described by partial differential equations. Our approach consists in discretizing these equations according to the finite-difference method and converting the resulting ordinary differential equations into an assembly of elementary electronic equivalent circuits that are directly simulated with SPICE. The main interest of this approach is the ability to couple such models with third-party SPICE models of electronic circuits, sensors, and transducers, i.e., models from any physical domain ruled by Kirchhoff laws, allowing modeling and simulation of any multi-physics systems in a conventional circuit design environment, here CADENCE. The tool is validated on simple problems for which analytical solutions are known. Then, the interest of the approach is illustrated on the study of a biosensor.
关键词： reaction-diffusion,Biosensor,virtual prototyping,biochemical reaction,ion-sensitive FET
更新于2025-09-23 15:22:29
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Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
摘要： In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold voltages are of (cid:1)0.97 (t0.6) V and (cid:1)1.22 (t0.31) V in air and at hydrogen concentration of 9800 ppm, respectively, for the depletion (enhancement)-mode device. In addition, by employing the co-integrated FETs the transfer characteristics of the direct-coupled FET logic (DCFL) obviously vary under hydrogen ambience. The VOH value reduces and the VOL value increases in the DCFL with the measurement of hydrogen detection.
关键词： Threshold voltage,Hydrogen sense,Doping-channel field-effect transistor,Enhancement/depletion-mode,AlGaInP/InGaAs,Direct-coupled FET logic
更新于2025-09-23 15:22:29
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[IEEE 2017 14th IEEE India Council International Conference (INDICON) - Roorkee (2017.12.15-2017.12.17)] 2017 14th IEEE India Council International Conference (INDICON) - Paper Based Flexible Carbon-FET Devices by Embedding Si Nanoparticles in Graphite Channel
摘要： A paper based carbon-FET (C-FET) was developed with graphite as channel. The performance of the fabricated C-FET was enhanced by embedding Si nanoparticles (SiNP) with the graphite. Initially, graphite was brush coated on paper substrate by mechanically rubbing a graphite source to fabricate the channel. However, to embed SiNP, the graphite was brush coated in presence of SiNPs, which formed graphite-SiNP composite and improved the performance of the device. It was observed that due to the presence of SiNP, the effect of gate voltage was improved approximately by a factor of four. The device was operated in back gate configuration with the paper as the dielectric material. Effect of loading of SiNP was also checked and it was found that the performance of the device improved with increase in SiNP loading. Thus, a carbon-FET was demonstrated with flexible substrate, which can be useful for different sensing and flexible electronic applications. Further, it was also observed that the performance of the C-FET was improved by adding semiconducting SiNPs. This approach of fabricating flexible paper based C-FETs are expected to be applied in the development of economical, replaceable, environment friendly, and disposable biomedical or point-of-care (POC) instruments, sensors, wearable and flexible electronic devices which will be affordable for a larger section of society.
关键词： Flexible electronics,Graphite,Nanoparticles,FET
更新于2025-09-23 15:22:29
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Effects of Trapped Charges in Gate Dielectric and High-k Encapsulation on Performance of MoS? Transistor
摘要： The effects of trapped charges in gate dielectric and high-k encapsulation layer on the performance of MoS2 transistor are investigated by using SiO2 with different thicknesses as the gate dielectric and HfO2 as the encapsulation layer of the MoS2 surface. Results indicate that the positive trapped charges in SiO2 can increase the electrons in MoS2 for screening the scattering of charged impurity (CI) in SiO2 and at the SiO2/MoS2 interface to increase the carrier mobility. However, the CI scattering becomes stronger for thicker gate dielectric with more trapped charges and can dominate the electron screening effect to reduce the mobility. On the other hand, with the HfO2 encapsulation, the OFF-currents of the devices greatly increase and their threshold voltages shift negatively due to more electrons induced by more positive charges trapped in HfO2. Moreover, the screening effect of these electrons on the CI scattering results in a mobility increase, which increases with the magnitude of the CI scattering. A 51% improvement in mobility is obtained for the sample suffering from the strongest CI scattering, fully demonstrating the effective screening role of high-k dielectric on the CI scattering.
关键词： Charged impurity (CI) scattering,mobility,high-k encapsulation,trapped charges,MoS2 FET
更新于2025-09-23 15:22:29