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[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Silicon dioxide degradation in strongly non-uniform electric field
摘要： The new experimental evidence of field-induced trap generation in the tunnel oxide of SuperFlash? memory cells has been presented. It was shown that the negative voltage stress generates the highest local electric field in the oxide close to the floating gate tip. The effect of electric stress on the degradation of tunneling characteristics has been studied for the cells with the different tunneling geometry. The reliability aspects of field-induced trap generation are discussed. It has been concluded that the analyzed degradation mechanism is not critical for the SuperFlash technology.
关键词： floating gate,program-erase cycling endurance,memory reliability,oxide degradation,electron tunneling,Flash memory,electron trapping
更新于2025-09-23 15:23:52
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A 12.8-Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth, Large-Capacity Storage Systems
摘要： Toward the aim of realizing high-bandwidth, large-capacity nand flash memory-based storage systems, this paper presents a novel daisy-chain downlink interface (I/F) between a controller and a large number of nand packages. The daisy-chain I/F employs a tapered-bandwidth architecture with bridge-by-bridge data extraction based on a proposed spectrally compressed multi-band multiplexing (SCM2) technique to achieve low power consumption. By using the proposed downlink I/F, a nand controller can handle 32 low-cost nand packages while achieving 12.8-Gb/s throughput using two data wires. The fabricated prototype downlink I/F achieved a bit error rate (BER) of 10^-12 with power consumption of 252.1 mW for the transmitter and 375.7 mW for all four receivers together.
关键词： large capacity storage,inter-symbol interference (ISI),daisy chain,Toggle double data rate (DDR),multi-band multiplexing,inter-channel interference (ICI),high-speed I/F,Bridge interface (I/F),high bandwidth,NAND flash memory,multi-drop bus
更新于2025-09-23 15:22:29
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Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells
摘要： In this study, a methodology for producing highly controlled and uniformly dispersed metal nanoparticles were developed by atomic layer deposition (ALD) technique. All-ALD grown thin film flash memory (TFFM) cells and their applications were demonstrated with ultra-small platinum nanoparticles (Pt-NPs) as charge trapping layer and control tunnel oxide layer. The ultra-small Pt-NPs possessed sizes ranging from 2.3 to 2.6 nm and particle densities of about 2.5 × 1013 cm–b. The effect of Pt-NPs embedded on the storage layer for charging was investigated. The charging effect of ultra-small Pt-NPs the storage layer was observed using the electrical characteristics of TFFM. The Pt-NPs were observed by a high-resolution scanning electron microscopy (HR-SEM). The memory effect was manifested by hysteresis in the IDS-VDS and IDS-VGS curves. The charge storage capacity of the TFFM cells demonstrated that ALD-grown Pt-NPs in conjunction with ZnO layer can be considered as a promising candidate for memory devices. Moreover, ZnO TFFM showed a ION/IOFF ratio of up to 52 orders of magnitude ?a/b – Vgs curve. Fabricated TFFMs exhibited clear pinch-off and show n-type field effect transistor (FET) behavior. The role of atomic-scale controlled Pt-NPs for improvement of devices were also discussed and they indicated that ALD-grown Pt-NPs can be utilized in nanoscale electronic devices as alternative quantum dot structures.
关键词： ZnO,Thin film flash memory,Pt nanoparticle,Atomic layer deposition,Memristor
更新于2025-09-23 15:21:21
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MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices
摘要： Low-dimensional MXene materials including MXene quantum dots (MQDs) and nanosheets have attracted extensive attention owing to their unique structures and novel properties, but their most attractive features are still less explored than expected. A systematic study of the memory effects of MQD-based electronics is reported. Monodisperse MQDs are prepared by using a one-step facile hydrothermal synthetic method. By varying the MQD content in polyvinylpyrrolidone (PVP) hybrid composite films, the electrical conductance of an indium tin oxide (ITO)/MQD-PVP/gold (Au) sandwich structure can be tuned precisely from insulator behavior to irreversible resistive switching, reversible resistive switching, and conductor behavior. These irreversible and reversible resistive switches are capable of exhibiting write-once-read-many times (WORM) and flash memory effects, respectively. Both types of devices operate stably under retention testing, with a high on/off current ratio up to 100. The tunable memory and transient features of these hybrid films are likely due to MQD charge trapping due to their quantum confinement and dissolvability of memristive components. The results suggest that MXene nanomaterials are promising as resistive switching trigger for emerging nonvolatile memories for data storage, specially data storage security.
关键词： resistive switching,MXene quantum dots,charge trapping,flash memory,nonvolatile memory,write-once-read-many memory
更新于2025-09-12 10:27:22
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Microcavity characteristics analysis of micro-shuttered organic light-emitting diodes
摘要： We propose a designing of multi-layer neural networks using 2D NAND flash memory cell as a high-density and reliable synaptic device. Our operation scheme eliminates the waste of NAND flash cells and allows analogue input values. A 3-layer perceptron network with 40,545 synapses is trained on a MNIST database set using an adaptive weight update method for hardware-based multi-layer neural networks. The conductance response of NAND flash cells is measured and it is shown that the unidirectional conductance response is suitable for implementing multi-layer neural networks using NAND flash memory cells as synaptic devices. Using an online-learning, we obtained higher learning accuracy with NAND synaptic devices compared to that with a memristor-based synapse regardless of weight update methods. Using an adaptive weight update method based on a unidirectional conductance response, we obtained a 94.19% learning accuracy with NAND synaptic devices. This accuracy is comparable to 94.69% obtained by synapses based on the ideal perfect linear device. Therefore, NAND flash memory which is mature technology and has great advantage in cell density can be a promising synaptic device for implementing high-density multi-layer neural networks.
关键词： synaptic device,multi-layer neural networks,hardware-based neural network,deep neural networks (DNNs),deep learning,NAND flash memory,neuromorphic
更新于2025-09-11 14:15:04