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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Wet-Chemically Textured Ultra-Thin GaAs Solar Cells with Dielectric/Metal Rear Mirrors
摘要： The rear-side contact layer of ultra-thin GaAs solar cells was textured using a simple, one-step wet chemical approach. A ZnS/Ag double layer was conformally deposited to function as a diffusive rear mirror. Local Ohmic contact points provided electrical contact directly to the Ag. The textured solar cells were compared with planar reference cells fabricated on the same wafer and a clear enhancement of long-wavelength quantum efficiency and short-circuit current was observed in the textured cells. Both architectures showed FF > 80% and VOC > 1 V. Additionally, the rear-side texture increases the external luminescent efficiency by enhancing outcoupling of luminescence.
关键词： light trapping,ultra-thin GaAs solar cells,dielectric mirror,wet etching
更新于2025-09-23 15:19:57
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Multiple epitaxial lift-off of stacked GaAs solar cells for low-cost photovoltaic applications
摘要： This paper presents a multilayer peeling from a stacked cell structure as an approach for the cost reduction of III–V solar cells. We demonstrate the separation of two-layer stacked GaAs solar cells with Al(Ga)As release layers on the GaAs substrate into individual layers without cracks. The cells in each layer peeled from the stacked structure show equivalent device performances. Thermal cycling tests with repeated heating to 85 °C and cooling to ?40 °C show that the flexible GaAs thin-film cell exhibits a high durability against temperature changes. Further, a damp heat test conducted at 85 °C and 85% humidity indicates that the cell has long-term stability. These results suggest that the flexible GaAs thin-film cells fabricated by peeling from stacked structures have a high reliability and prove that the separation of the stacked cell structures into individual layers is effective in fabricating low-cost III–V solar cells.
关键词： epitaxial lift-off,cost reduction,damp heat test,photovoltaic applications,thermal cycling,GaAs solar cells
更新于2025-09-23 15:19:57
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Embedding physics domain knowledge into a Bayesian network enables layer-by-layer process innovation for photovoltaics
摘要： Process optimization of photovoltaic devices is a time-intensive, trial-and-error endeavor, which lacks full transparency of the underlying physics and relies on user-imposed constraints that may or may not lead to a global optimum. Herein, we demonstrate that embedding physics domain knowledge into a Bayesian network enables an optimization approach for gallium arsenide (GaAs) solar cells that identifies the root cause(s) of underperformance with layer-by-layer resolution and reveals alternative optimal process windows beyond traditional black-box optimization. Our Bayesian network approach links a key GaAs process variable (growth temperature) to material descriptors (bulk and interface properties, e.g., bulk lifetime, doping, and surface recombination) and device performance parameters (e.g., cell efficiency). For this purpose, we combine a Bayesian inference framework with a neural network surrogate device-physics model that is 100× faster than numerical solvers. With the trained surrogate model and only a small number of experimental samples, our approach reduces significantly the time-consuming intervention and characterization required by the experimentalist. As a demonstration of our method, in only five metal organic chemical vapor depositions, we identify a superior growth temperature profile for the window, bulk, and back surface field layer of a GaAs solar cell, without any secondary measurements, and demonstrate a 6.5% relative AM1.5G efficiency improvement above traditional grid search methods.
关键词： Bayesian network,GaAs solar cells,photovoltaics,neural network surrogate model,process optimization
更新于2025-09-23 15:19:57
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A study on triple-junction GaInP2/InGaAs/Ge space grade solar cells irradiated by 24.5??MeV high-energy protons
摘要： This paper was reported high-energy proton exposure effects on triple-junction GaInP2/InGaAs/Ge space grade solar cells. In order to explore the degradation of solar cells in hard radiation environments detailed and systematic analysis were performed, and the results were presented. The irradiation process was carried out using 24.5 MeV protons with doses ranging from 0 to 170 Gy. The degradation of output parameters of solar cells was studied as a function of damaged dose using light current–voltage measurements. The current–voltage characteristics indicated that the short circuit current was degraded less than the open circuit voltage because the base sub-cell of GaAs was significantly damaged. To analyze the effects of radiation-induced displacement damage on cell performance SRIM simulation was performed. Capacitance and conductance measurements were done to knowledge about the carrier concentration and interface trap density. A decrease in carrier concentration and a small increase in interface trap density were observed.
关键词： Conductance method,Triple-junction,GaInP2/GaAs solar cells,Proton irradiation
更新于2025-09-23 15:19:57
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[IEEE 2018 Australasian Universities Power Engineering Conference (AUPEC) - Auckland, New Zealand (2018.11.27-2018.11.30)] 2018 Australasian Universities Power Engineering Conference (AUPEC) - Nano-structured GaAs Solar Cell Design, Simulation and Analysis for Conversion Efficiency Improvement
摘要： This paper discusses nano-structured GaAs solar cell design and analysis for conversion efficiency improvement by increasing the light transmission and absorption, reducing the light reflection. The focus of this research is to construct different type of nano-grating shaped GaAs solar cells with various nano-grating heights and pitches, to compare the simulation results and find a suitable nano-structure that can provide higher conversion efficiency. Finite difference time domain (FDTD) simulation tool is used to simulate and calculate transmission and absorption for different nano-grating shapes, such as, parabolic, triangular, trapezoidal and rectangular. Based on the simulation results, it has been confirmed that the light reflection of parabolic shaped nano-grating structures is higher than triangular nano-grating structures, but it is lower than rectangular and trapezoidal shaped nano-grating structures. Moreover, the simulation results confirmed that the light transmission of parabolic shaped nano-grating structures is about 62.3% having a 200-nm grating height and an 810-nm grating pitch, which is about 22% higher than the rectangular (i.e., flat) type substrates.
关键词： Finite-difference time-domain method,transmission,GaAs solar cells,and absorption,Nano-grating structure,Light reflection,Conversion efficiency,Solar or renewable energy
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Improved Photoabsorption in Thin Gallium Arsenide Solar Cells using Light Trapping Techniques
摘要： Thin absorbers for space photovoltaics can achieve higher radiation tolerance, however, they suffer from reduced photoabsorption as the active region is thinned. In this work, increasing the photoabsorption in thin single junction n-i-p GaAs solar cells have been investigated by applying different light trapping structures at the rear of the cell. The main focus has been to develop a random surface texture that varies in three dimensions to increase light scattering and the effective optical path length. From the EQE, the random back surface reflector was successfully applied to a 1.1 μm thick GaAs solar cell which resulted in a notable 38% increase in current output, when compared to the GaAs baseline cell on its substrate without a BSR. The random texture has shown the capability to maintain the current output in the 1.1 μm thick GaAs absorber and shows promise for enhancing the photoabsorption in thin GaAs absorbers that approach the sub-μm thickness regime.
关键词： photoabsorption,thin GaAs solar cells,light trapping,random maskless texture,radiation tolerance
更新于2025-09-16 10:30:52