研究目的
Investigating the separation of two-layer stacked GaAs solar cells with Al(Ga)As release layers on the GaAs substrate into individual layers without cracks and evaluating their device performances and durability.
研究成果
The multiple ELO process successfully separated two-layer stacked GaAs solar cells into individual layers without cracks, showing equivalent device performances. The flexible GaAs thin-film cells exhibited high durability against temperature changes and long-term stability, indicating their potential for low-cost photovoltaic applications.
研究不足
The study was limited to two-layer stacked GaAs solar cells due to the low crystal growth rate of MBE. The technical issue with HVPE regarding the growth of Al(Ga)As layers was noted, suggesting a need for further optimization.
1：Experimental Design and Method Selection:
The study involved the growth of two-layer stacked GaAs solar cells with Al(Ga)As release layers using solid-source molecular beam epitaxy (MBE), followed by their separation into individual layers using the epitaxial lift-off (ELO) technique with hydrofluoric solution (HF).
2：Sample Selection and Data Sources:
Samples were fabricated on GaAs (001) substrates with specific Al compositions in the release layers to control etching speed.
3：List of Experimental Equipment and Materials:
MBE for growth, HF solution for etching, polyethylene-terephthalate (PET) flexible carriers for transfer.
4：Experimental Procedures and Operational Workflow:
Growth of cell structures, deposition of electrodes, ELO process, transfer to PET sheets, and device performance evaluation.
5：Data Analysis Methods:
Light current–voltage (J–V) measurements, external quantum efficiency (EQE) spectra, time-resolved photoluminescence (PL) decay profiles, thermal cycling, and damp heat tests.
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